• 전자공학회논문지T
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• 제35T권1호
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• pp.48-58
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• 1998

본 논문은 센서에서 수반되는 기생용량과 온도 드리프트 및 누설전류의 영향을 경감하기 위한 C-V변환회로 및 C-V변환회로에 관한 실험결과를 제시하고, 또한 논문에서 제안한 센싱 주파수를 기준주파수로 나누어줌으로써 상기 영향들을 줄일 수 있는 새로운 인터페이스 회로를 제시한다 이 회로는 용량비의 출력신호를 디지털 방식으로 16진수로 계수 함으로써 신호의 전송이나 컴퓨터 처리가 쉬울 뿐 아니라 비트수의 증가에 따라 분해 능을 향상시킬 수 있는 이점도 있다. 시작한 인터페이스 회로의 C-V 및 C-F 변환회로에서 전원전압 4.0V, 피이드백 커패시턴스10pF, 압력 0∼10 KPa범위에서 감도는 각각 28 ㎷/㎪·V, -6.6 ㎐/㎩로서 양호하였고, 온도 드리프트 특성은 0.051 %F.S./℃ 및 0.078 %F.S./℃로서 크게 개선되었다.

• 전력전자학회논문지
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• 제14권3호
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• pp.228-234
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• 2009

본 논문에서는 위상제어방식 풀브릿지 컨버터의 회로방식에 대한 전력손실과 전력변환 효율특성을 빠르고 효과적인 분석 방법에 대해 보고한 것이다. 위상제어방식 풀브릿지 컨버터의 회로 구성 소자 중에서 내부 기생저항만을 고려한 등가회로를 유도하고 이상적인 동작 파형을 이용하여 전류의 실효값과 전도손실을 유도하였다. 해석을 간단하게 하기 위해서 정상상태 결과로부터 코어 손실은 무시하였으며, 동기정류기 손실과 전도손실 만을 고려하였다. 해석결과의 타당성을 검토하기 위해서 시험용 위상제어방식 풀브릿지 컨버터를 구성하여 검증하였다. 입력전압 400V, 출력전압 12V, 최대전력 720W의 조건에서 실험결과와 해석결과와 비교적 잘 일치한다는 것을 본 논문에서 확인 하였다.

• 대한전자공학회논문지TC
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• 제37권12호
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• pp.15-21
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• 2000

본 연구에서는 유전체슬랩으로 덮혀 있고 단락 종단된 평행평판 도파관의 좁은 슬릿을 통한 유전체슬랩 위의 도체스트립과의 전자기적인 결합을 평행평판 도파관에 TEM파가 입사되는 경우에 대하여 고려하였다. 슬릿의 전계와 도체스트립에 유기된 전류를 미지수로 하는 결합적분방정식을 유도하고 모멘트방법을 이용하여 풀었다. 그 결과로부터 슬릿의 폭이 매우 좁음에도 불구하고 도체스트립의 폭과 위치를 적절히 택하면 입사전력의 대부분이 도파관 외부로 결합될 수 있음을 관찰하였다. 또한 도체스트립과 도파관의 윗면이 캐비티를 구성하는 경우와 도체스트립이 기생소자 역할을 하는 경우에 있어서 관찰되는 두 가지 복사현상들 간의 차이점에 대하여 논의하였다.

• 센서학회지
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• 제5권5호
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• pp.63-68
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• 1996

출력신호를 검출하기 위한 집적화한 용량형 압력센서를 구현하기 위해서는 센서의 특성에 나쁜 영향을 미치는 기생용량, 온도/열 드리프트 및 누설전류 등의 요소가 개선 되어야 한다. 본 논문에서는 2개의 용량-주파수 변환기와 4비트 디지탈 보상회로로 구성된 새로운 이상적인 인터페이스 회로를 설계 하였다. 이 회로는 센싱 센서 주파수를 기준 센서 주파수로 나누어줌으로써 드리프트 및 누설전류의 영향이 제거될 수 있도록 설계 되었고, 신호 전송시 잡음의 영향이 적은 디지탈 신호를 처리하도록 되어있다. 그르므로 이 회로는 디지탈 비트수를 늘려 줌으로 출력신호의 분해능을 향상 시킬 수 있다. 또 이 회로 중 디지털 부분은 FPGA 칩으로 제작되어 그 작동이 확인 되었다.

• 한국정보통신학회논문지
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• 제13권7호
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• pp.1371-1378
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• 2009

본 논문에서는 로직 공정 기반의 저전력 eFuse OTP 메모리 셀을 제안하였다. eFuse OTP 메모리 셀은 프로그램과 읽기 모드에 최적화되도록 각각의 트랜지스터를 사용하였으며, WL과 BL의 기생적인 커패시턴스를 줄이므로 읽기 모드에서의 동작 전류를 줄였다. 그리고 저전력, 저면적의 eFuse OTP 메모리 IP 설계를 위하여 비동기식 인터페이스, 분리된 I/O, 디지털 센싱 방식의 BL 감지 증폭기 회로를 사용하였다. 모의실험 결과 읽기 모드에서의 동작전류는 VDD, VIO 각각 349.5${\mu}$A, 3.3${\mu}$A로 나왔다. 그리고 동부하이텍 0.18${\mu}$m generic 공정으로 설계된 eFuse OTP 메모 리 IP의 레이아웃 면적은300 ${\times}$557${\mu}m^2$이다.

• Parasites, Hosts and Diseases
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• 제46권3호
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• pp.191-193
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• 2008

Cutaneous leishmaniasis (CL) is a parasitic disease characterized by single or multiple ulcerations. Secondary bacterial infections are one of the complications that can increase the tissue destruction and the resulting scar. To better determine the incidence of real secondary bacterial infections in CL, we designed the current study. This was a cross-sectional study performed in Skin Diseases and Leishmaniasis Research Centre, Isfahan, Iran. A total of 1,255 patients with confirmed CL enrolled in the study. Sterile swaps were achieved for ulcer exudates and scraping was used for non-ulcerated lesions. All samples were transferred to tryptic soy broth medium. After 24 hr of incubation at $37^{\circ}C$ they were transferred to eosin methylene blue agar (EMB) and blood agar. Laboratory tests were used to determine the species of bacteria. Among 1,255 confirmed CL patients, 274 (21.8%) had positive cultures for secondary bacterial infections. The bacteria isolated from the lesions were Staphylococcus aureus in 190 cases (69.3%), coagulase negative Staphylococcus in 63 cases (23.0%), E. coli in 10 cases (3.6%), Proteus sp. in 6 cases (2.2%), and Klebsiella sp. in 5 cases (1.9%). The results show that the overall incidence of secondary bacterial infections in the lesions of CL was 21.8%, considerably high. The incidence of secondary bacterial infections was significantly higher in ulcerated lesions compared with non-ulcerated lesions.

• 전력전자학회논문지
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• 제26권5호
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Clinical and Experimental Pediatrics
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• 제64권11호
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• pp.575-581
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• 2021

Background: Toxocariasis is a zoonotic parasitic disease caused by Toxocara canis and Toxocara cati in humans. Various types of T. canis are important. Purpose: The current study aimed to investigate the prevalence of Toxocara spp. in pediatrics in the context of a systematic review and meta-analysis. Methods: The MEDLINE (PubMed), Web of Sciences, Embase, Google Scholar, Scopus, and Cumulative Index of Nursing and Allied Health databases were searched to identify peer-reviewed studies published between January 2000 and December 2019 that report the prevalence of Toxocara spp. in pediatrics. The evaluation of articles based on the inclusion and exclusion criteria was performed by 2 researchers individually. Results: The results of 31 relevant studies indicated that the prevalence of Toxocara spp. was 3%-79% in 10,676 cases. The pooled estimate of global prevalence of Toxocara spp. in pediatrics was 30 (95% confidence interval, 22%-37%; I²=99.11%; P=0.00). The prevalence was higher in Asian populations than in European, American, and African populations. Conclusion: Health policymakers should be more attentive to future research and approaches to Toxocara spp. and other zoonotic diseases to improve culture and identify socioeconomically important factors.

• Genomics & Informatics
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• 제17권1호
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• pp.7.1-7.10
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• 2019

Cysticercosis, a parasitic disease caused by Taenia solium metacestode (TsM), has a major global public health impact in terms of disability-adjusted life years. The parasite preferentially infects subcutaneous tissue, but may invade the central nervous system, resulting in neurocysticercosis (NC). NC is an important neglected tropical disease and an emerging disease in industrialized countries due to immigration from endemic areas. The prevalence of taeniasis in Korea declined from 0.3%-12.7% during the 1970s to below 0.02% since the 2000s. A survey conducted from 1993 to 2006 revealed that the percentage of tested samples with high levels of specific anti-TsM antibody declined from 8.3% to 2.2%, suggesting the continuing occurrence of NC in Korea. Modern imaging modalities have substantially improved the diagnostic accuracy of NC, and recent advances in the molecular biochemical characterization of the TsM cyst fluid proteome also significantly strengthened NC serodiagnosis. Two glycoproteins of 150 and 120 kDa that induce strong antibody responses against sera from patients with active-stage NC have been elucidated. The 150 kDa protein showed hydrophobic-ligand binding activities and might be critically involved in the acquisition of host-derived lipid molecules. Fasciclin and endophilin B1, both of which play roles in the homeostatic functions of TsM, showed fairly high antibody responses against calcified NC cases. NC is now controllable and manageable. Further studies should focus on controlling late-onset intractable seizures and serological diagnosis of NC patients infected with few worms. This article briefly overviews diagnostic approaches and discusses current issues relating to NC serodiagnosis.

• Current Photovoltaic Research
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• 제12권2호
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• pp.31-36
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• 2024

Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiO_x) and poly-Si. In poly-Si/SiO_x based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO₂) as a doping barrier before doping and analyzed the barrier effect of SiO₂. In the experiments, p⁺ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high V_oc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied V_oc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.