• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.51-54
• /
• 2006

본 연구는 CMP 공정 중의 Conditioning 최적화에 관한 내용이다. CMP Pad Conditioner의 역할은 CMP 공정 중 Slurry 및 연마 잔유물에 의해 Pad 표면에 눈막힘 현상(Glazing)이 발생하여 Wafer의 연마속도가 급속히 저하되는 현상을 방지하여 공정의 안정성을 향상시키는 데 있다. 본 연구 중 Conditioning은 In-situ 방식으로 진행되었으며, Conditioning 비율을 Polishing Time 대비 50%만 진행하여도 연마속도 저하현상은 나타나지 않음을 확인하였다. 이로써 Pad 마모랑 감소 및 Conditioner 교체 주기연장이 가능해져, CMP 공정의 Cost를 절감할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.56-56
• /
• 2009

반도체 device가 점점 고집적화, 다층화 되면서 막질의 평탄화를 위한 CMP (chemical mechanical planarization) 공정은 반도체 제작 공정에서 필수 요건이 되었다. 특히 pad conditioning은 CMP 공정 중, 막질의 제거율과 균일도를 유지시키기 위한 중요한 공정이다. 하지만, conditioner를 장시간 사용할 경우 slurry residue와 같은 잔류 오염물질들이 conditioner의 표면의 오염을 유발할 수 있고 이로 인해 conditioner의 수명이 단축되거나 웨이퍼 표면에 결함을 유발할 수도 있다. 본 연구에서는 이를 방지하기 위해 vapor SAM을 이용하여 Ni conditioner 표면에 소수성 박막을 증착하여 오염여부를 평가해 보았다. 먼저, Ni wafer를 이용하여 증착 온도와 압력에 따라 소수성 박막을 증착하여 표면특성을 평가해 보았다. 증착전과 후에 Ni wafer 표면의 접촉각은 contact angle analyzer (Phoenix 400, SEO, Korea)를 이용하여 측정하였다. 박막 표면 형상과 거칠기는 AFM (XE-100, PSIA, Korea)를 이용하여 평가되었고 묘면 성분 분석을 위해 FT-IR (Nicolet 6700, Thermo Scientific, USA)이 사용되었다. SEM (S-4800, Hitach, Japan)은 박막 증착 전과 후의 conditioner를 이용하여 실제 conditioning후 conditioner 표면의 particle 오염정도를 관찰하기 위해 사용되었다. 또한, conditioner 표면에 실제 오염되어있는 particle 개수를 평가하기 위해 particle size analyzer (Accusizer 780A, Particle Sizing Systems Co., USA)을 사용하였다. 본 실험을 통해 최적 증착 조건을 확립하였으며 실제 conditioner 표면에 소수성 박막을 증착 후 $100^{\circ}$ 이상의 높은 contact angle을 확인할 수 있었다. 또한, 소수성 박막이 증착된 conditioner의 경우 실제 conditioning후 표면 particle 오염이 현저히 감소되었음을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.171-175
• /
• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion- usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder type conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usually scraped. Figure 1 shows the typical shape of scratch damaged from diamond. e suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning. so new designed Flat stripper was introduced.

• Proceedings of the Korean Society for Bio-Environment Control Conference
• /
• 1994.11a
• /
• pp.67-69
• /
• 1994

4계절이 뚜렷한 우리나라의 겨울철은 작물생산에 단경기이었으나, 플라스틱 하우스나 유리온실이 보급되면서 겨울철 단경기가 해소되었다. 그러나 이리한 시설들은 PE 또는 유리 등의 피복자재를 사용하여 여름철의 경우 막대한 일사부하로 온실 내부온도가 외부온도보다 높아져 작물생육에 열악한 환경을 조성한다. 이에 fog and pad system, fan and pad system 과 heat pump 등이 개발되어 있으나 실용적으로 도입되지 못하고 있는 실정이다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.358-359
• /
• 2005

Chemical mechanical polishing(CMP) process depends on a variety of variables. Especially, surface roughness of pad plays a key role in material removal in CMP in terms of transportation ability of pores and real contact area. The surface roughness is deteriorated with polishing time by applied pressure and relative velocity. In this reason, diamond conditioner has been used to maintain the roughness on the pad. The authors try to investigate the correlation between pad roughness and frictional behavior by comparing ex-situ conditioning with in-situ conditioning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.563-564
• /
• 2006

Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A diamond disk use during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In. this study, we characterized diamond disk with 9 kinds of sample.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1142-1143
• /
• 2006

Kinik Company pioneered diamond pad conditioners protected by DLC barrier ($DiaShield^{(R)}$ Coating) back in 1999 (Sung & Lin, US Patent 6,368,198). Kink also evaluated Cermet Composite Coating (CCC or $C^3$, patent pending) with a composition that grades from a metallic (e.g. stainless steel) interlayer to a ceramic (e.g. $Al_2O_3$ or SiC) exterior. The metallic interlayer can form metallurgical bond with metallic matrix on the diamond pad conditioner. The ceramic exterior is both wear and corrosion resistant. The gradational design of $C^3$ coating will assure its strong adherence to the substrate because there is no weak boundary between coating and substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.171-175
• /
• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.1
• /
• pp.15-20
• /
• 2007

Conditioner wear, copper polish rates, pad temperature and coefficient of friction (COF) are measured for two novel Mitsubishi Materials Corporation designs during an extended wear and polishing test. Both designs are coated with a $Teflon^{TM}$ film to reduce substrate wear and chemical attack. Using optical interferometry, changes in the coating that result in gradual changes in diamond exposure are measured. Theories of the COF, conditioning, and polishing are applied to explain the observed performance differences between the designs.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.1
• /
• pp.11-14
• /
• 2007

Consumables used in Chemical Mechanical Polishing (CMP) have been played important role to improve quality and productivity. Since the properties of consumables constantly change with various reasons, such as shelf time, manufactured time, lot to lot variation from supplier and so on, CMP results are not constant during the process. Also, CMP process results are affected by multiple sources from wafer, conditioner, pad and slurry. Therefore, multiple sensing systems are required to monitor CMP process variation. In this paper, the authors focus on development of monitoring system for CMP process which consist of force, temperature and displacement sensor to measure the signal from CMP process. With monitoring systems mentioned above, complex CMP phenomena can be investigated more clearly.