• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.39-43
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• 2001

$SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.02a
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• pp.37-59
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• 2004

In the case of Ni/Au finished pad on the package side, the solder joint of SnAgCu system can bring brittle fracture under impact load such as drop test. Therefore, it's difficult to prevent the brittle fracture of lead-free solder, by controlling Cu content. The failure locus existing on the interface between $(Ni,Cu)_3Sn_4\;and\;(Cu,Ni)_6Sn_5$ IMC layers must be changed to other site in order to avoid brittle fracture due to impact load. It was not found any clear evidence that there were two IMC layers exist. But it was strongly assumed these were two layers which have different Cu-Ni composition. From the above analysis it was assumed that Cu atom in the solder alloy or substrate seemed to affect IMC composition and cause to IMC brittle fracture.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.41-45
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• 2013

Modern electronic devices such as tablets and smartphones are getting more powerful and efficient. The demand in feature sets, functionality and usability increase exponentially and this has posed a great challenge to the design of a power distribution network (PDN). Power rails merging is a popular option used today in a PDN design as numerous power rails are no longer feasible due to form factor limitation and cost constraint. In this paper, the criteria and limitations for power rails merging are discussed. Despite having all the advantages such as pin count reduction, decoupling capacitors sharing, lower impedance and cost saving, power rails merging can however, introduce coupling noise to the system. In view of this, a PDN design with power rails merging that fulfills design recommendations and specifications such as noise target, power well placement, voltage supply values as well as power supply quadrant assignment is extremely important.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.31-38
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• 1998

저온소결기판용 Glass-ceramics를 제조하기 위해 LiO2-MgO-MgF2-SiO2계 조성에 서 B2O3첨가가 결정화 특성 및 물성에 미치는 영향을 고찰하였다. 145$0^{\circ}C$에서용융하여 제조 한 모유리의 핵형성 온도와 결정화 온도를 결정하기 위해 TMA와 DTA분석을 실시하였다. 결정화시킨 유리의 결정상과 미세구조를 관찰하기 위하여 XRD와 SEM관찰을 실시하였다. Water swelling을 통해 Glass-ceramics powder를 제조하였으며 제조한 powder의 평균입자 크기는 8.32$\mu$m였다.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.21-26
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• 1998

대용량, 고속데이터 처리가 요구되는 System 개발은 이들의 복잡하고 고기능의 회 로 구현이 가능하냐에 달려 있고 또한 이들고기능 요구를 가장 잘 만족할수 있는 패키지는 MCM 이라 할 수있다. 시스템의 고속화, 소형화는 회로의 복잡성을 요구하는 있는 이를 패 키지로 구현하는 MCM은 시험성 확보에 심각한 문제점으로 나타나고 있다. 본 논문에서는 고밀도 구조의 MCM 기판에 대한 Interconnetion Line 시험검증을 위한 Flying Prober의 적 용 및 모듈 패키징 공정에 대한 조립성 검증을 위한 BST에 대해 설명한다. 연구에 사용된 MCM 모듈은 MCM-D 공정으로 제작되었으며 31um 신호선폭, 50um Via Hole Dia. 5신호 선층 5절연층 및 455 Net의 기판으로절연층은 Dow chemical의 BCB-4024/4026을 적용하였 다. 조립은 3 ASIC, 24소자 실장 및 2000 Wire Bonding으로 이루어지며 패키지는 방열특성 을 고려한 BGA(491 I /O,50mil pitch)를 개발하여 사용하였다. MCM 기판의미세패턴으로 구성된 Interconnection Line에 대해 Fine Ptich Probing이 가능한 Flying Prober를 사용하 여 평가하였으며 BST를 이용하여 실장소자의 KGD평가 및 능동, 수동소자가 실장된 MCM Package의 조립시험성을 확보할수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.87-96
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• 2000

The properties of polyimide for interlayer dielectric applications are investigated during plasma etching of aluminum on it. Chlorine-based plasma generally used for aluminum etching results in an increase in the (dielectric constant of polyimide, while $SF_6$ plasma exhibits a high polyimide etch rate and a reducing effect of the dielectric constant. The leakage current of polyimide is significantly suppressed after plasma exposure. An optimal combination of Al etch with $Cl_6$ plasma and polyimide etch with $SF_6$ plasma is expected to be a good tool for realizing multilevel metallization structures.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.23-27
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• 2000

Simultaneous Switching Noise (SSN) propagated through parallel power and ground planes in high-speed multilayer printed circuit boards (PCBs) causes malfunction of both digital and analog circuits. To reduce SSN, decoupling capacitors are generally used in the PCBs. In this paper, we improve the equivalent circuit model of decoupling capacitor in high-frequency range to analyze the effect of SSN reduction accurately. The analysis is performed by the microwave and RF design system (MDS) method and the finite difference time domain (FDTD) method. We compared the results by the ideal capacitor model with those by the proposed model.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.68-71
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• 2003

The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.278-281
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• 2003

A new type of ultrasonic spray nozzle was fabricated with piezoelectric devices. The spray nozzle was designed for the chemicals dispersion in the water purification bath. The piezoelectric properties in ultrasonic spray nozzles were optimized for the better dispersion of chemicals for purification process. Ultrasonic spray nozzle was packaged in metal case with silicone resin for the water proof application.