• BMB Reports
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• v.34 no.2
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• pp.176-181
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• 2001

Using a retrovirus, foreign genes can be introduced into mammalian cells. The purpose of this study is to produce a retrovirus that can make the infected cells express two genes; the human multidrug resistance gene (MDR1) and the HLA-B7 gene, which is one of the major human histocompatibility complex (MHC) class I genes. For the expression of these genes, the internal ribosome entry site (IRES) was used, which was derived from the encephalomyocarditis (EMC) virus. In order to produce retroviruses, a retroviral vector was transfected into a packaging cell line and the transfected cells were treated with vincristine, which is an anti-cancer drug and a substrate for the MDRI gene product. This study revealed that two genes were incorporated into chromosomes of selected cells and expressed in the same cells. The production of the retrovirus was confirmed by the reverse transcription (RT)-PCR of the viral RNA. The retrovirus that was produced infected mouse fibroblast cells as well as the human U937. This study showed that packaging cells produced the retroviruses, which can infect the target cells. Once the conditions for the high infectivity of retrovirus into human cells are optimized, thus virus will be used to infect hematopoietic stem cells to co-express MDRl and HLA-B7 genes, and develop the lymphocytes that can be used for the immnogene therapy.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.21-26
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• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.65-71
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• 2005

At present, Electronic industries push ahead to eliminate the Pb(Lead) -a hazardous material-from all products. Especially, we have performed to select the optimum standard composition of lead free alloy for the application to products for about 3 years from 2000. These days, we have the chance for applying to the mass-production. This project constructed the system for applying the lead free solders on consumer electronic products, which is one of the major products of the LG Electronics. To select the lead free solders with corresponding to the product features, we have passed through the test and applied with Sn-3.0Ag-0.5Cu alloy system to our products, and for the application to the high melting temperature composition, we secured the thermal resistance of the many parts and substrate and optimized the processing conditions. We have operated the temperature cycling test and the high temperature storage test under the standards to confirm the reliability of the products. On these samples, we considered the consequence of our decision by the operating test. For the long life time of the product, we have operated the temperature cycling test at $-45^{\circ}C\;-\;+125^{\circ}C$, 1 cycle/hour, 1000 cycles. Also we have tested the tin whisker growth about lead free plating on lead finish. We have analyzed with the SEM, EDS and any other equipment for confirming the failure mode at the joint and the tin whisker growth on lead free finish.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.71-77
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• 2007

In this study, the mechanical and electrical properties of three different ball grid array (BGA) solder joints, consisting of Sn-37Pb, Sn-3.5Ag and Sn-3.5Ag-0.75Cu (all wt.%), with organic solderability preservative (OSP)-finished Cu pads were investigated as a function of reflow number. Based on scanning electron microscopy (SEM) analysis results, a continuous $Cu_6Sn5$, intermetallic compound (IMC) layer was formed at the solder/substrate interface, which grew with increasing reflow number. The ball shear testing results showed that the shear force peaked after 3 reflows (in case of Sn-Ag solder, 4 reflows), and then decreased with increasing reflow number. The electrical property of the joint gradually decreased with increasing reflow number.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.63-67
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• 2015

In this study, we demonstrate the change of optical characteristic by thickness of metal deposition on nano metal grid polarizer film fabrication. Nano metal grid polarizer film consists of aluminium grid polarizer layer on PET (Polyethylene phthalate) substrate. We aim at metal grid layer formation for the large nano wire grid polarizer fabrication. we draw process conditions of the nano metal grid polarizer film fabrication to improve transmittance and extinction ratio and Nano wire grid polarizer film (NWGP) film is fabricated with 140 nm pitch, 70 nm width, and 70 nm depth of metal grid on optimum design conditions. As a result, we get high optical properties of nano wire grid polarizer which is the maximum transmittance of 80% and the extinction ratio of $10^6$ at 600 nm wavelength respectively.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.45-49
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• 2014

In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at $90^{\circ}C$. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.41-44
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• 2014

In this paper, we will investigate the activation energies of Nb for $TiO_2$ using Hall effect measurement and photoluminescence (PL) system. Nb-doped $TiO_2$ thin film was grown on $SrTiO_3$ substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.57-62
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• 2014

Using flexible bismaleimide-triazine co-polymer as a substrate, inkjet-printed Cu films were also investigated for low-cost and process feasibility of flexible electronics. After annealing at $200^{\circ}C$ for 1 h under various reducing ambient, surface color was changed to red and electrical resistivity was decreased to the level of conductor under formic acid ambient. However, its resistivity was much higher than conventional copper films due to surface crack. In order to reduce the residual film stress after annealing, additional isothermal treatment was inserted before anneal hiring the stress relaxation applied in processes of amorphous materials. As a result, no surface crack was observed and electrical resistivity of $3.4{\mu}{\Omega}cm$ was measured after annealing at $230^{\circ}C$ with stress relaxation while electrical resistivity of $7.4{\mu}{\Omega}cm$ was observed after normal annealing without relaxation. The effect of stress relaxation was also confirmed by observing surface crack after decreasing the relaxation time to 0 min.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.73-76
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• 2020

Silver nanowires (AgNWs) intrinsically possess high conductivity, ductility, and network structure percolated in a low density, which have led to many advanced applications of transparent and flexible electronics. Most of these applications require patterning of AgNWs, for which photolithographic and printing-based techniques have been widely used. However, several drawbacks such as high cost and complexity of the process disturb its practical application with patterning AgNWs. Herein, we propose a novel method for the patterning of AgNWs by employing UV-curable adhesive tape with a structure of liner/adhesive layer/polyolefin (PO) film and UV irradiation to simplify the process. First, the UV-curable adhesive tape was attached to AgNWs/polyurethane (PU), and then selectively exposed to UV irradiation by using a photomask. Subsequently, the UV-curable adhesive tape was peeled off and consequently AgNWs were patterned on PU substrate. This facile method is expected to be applicable to the fabrication of a variety of low-cost, shape-deformable transparent and wearable devices.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.227-233
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• 2005

Carbon nanotubes (CNT) which were grown, on the alumina substrate with a pair of comb-type Au electrodes, by plasma enhanced chemical vapor deposition have been investigated for $NO_2$ gas sensor. The electrical resistance of CNT film decreased with temperature, indicating a semiconductor type of CNT, and also the resistance of CNT sensor decreased with increasing $NO_2$ concentration. Upon exposure to $NO_2$ gas, the electrical resistance of CNT film sensor rapidly decreased within 3 minutes, and then showed a constant value after $20\~30$ minutes. It is found that the sensitivity of CNT sensor has been improved by air oxidation. The CNT sensor oxidized at $450^{\circ}C$ for 30 minutes showed higher sensitivity value than that without oxidation by $27\%$, even for a low 250 ppb $NO_2$ concentration at operating temperature of $200^{\circ}C$. But it needs a recovery time more than 20 minutes for reuse after detection of $NO_2$ gas.