• Title/Summary/Keyword: pN2

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Analysis of Water Quality Pollutants Proximated to sediment in Lake (호소내 퇴적물의 근접도에 따른 수질오염물질 분석(I) - COD, T-N, T-P, pH -)

  • Park, Sun-Ku;Yang, Young-Mo
    • Analytical Science and Technology
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    • v.14 no.3
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    • pp.238-243
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    • 2001
  • The study was carried out to analysis of the pollutant $COD_{Mn}$, T-N, T-P for water quality proximated to sediment in lake of K river basin. water extracted from sediment showed higher $COD_{Mn}$, T-N, T-P datas than water proximated to sediment. Also, water proximated to sediment and water 5-10cm proximated to sediment showed the following data : $COD_{Mn}$, 1.2~1.9mg/L, T-N, 1.3~6.2mg/L, TP, 0.05~0.26mg/L, respectively. From this results, we have known the fact that the pollution degree of sediment have an effect on the water quality in lake and stream.

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Processes For Fabricating Planar p-n Diodes and Planar n-p-n Transistors (푸래너.다이오드와 트랜지스터의 시작[제I보])

  • Jeong, Man-Yeong;An, Byeong-Seong;Kim, Jun-Ho
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.3 no.2
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    • pp.2-9
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    • 1966
  • fabricating processes of silicon planar n-p-n transistors are described. These processes include materical preparation, oxidation, photoresist, boron diffusion, phosphorous diffusion, and aluminium metalizing. Boron layer has been diffused in n type silicon from B2O3-SiO2 source using the box method, Phosporous layer has been diffused from P2O5-SiO2 source with the same method. The planar diodes are also fabricated by the processes described above.

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On Generalized Integral Operator Based on Salagean Operator

  • Al-Kharsani, Huda Abdullah
    • Kyungpook Mathematical Journal
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    • v.48 no.3
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    • pp.359-366
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    • 2008
  • Let A(p) be the class of functions $f\;:\;z^p\;+\;\sum\limits_{j=1}^{\infty}a_jz^{p+j}$ analytic in the open unit disc E. Let, for any integer n > -p, $f_{n+p-1}(z)\;=\;z^p+\sum\limits_{j=1}^{\infty}(p+j)^{n+p-1}z^{p+j}$. We define $f_{n+p-1}^{(-1)}(z)$ by using convolution * as $f_{n+p-1}\;*\;f_{n+p-1}^{-1}=\frac{z^p}{(1-z)^{n+p}$. A function p, analytic in E with p(0) = 1, is in the class $P_k(\rho)$ if ${\int}_0^{2\pi}\|\frac{Re\;p(z)-\rho}{p-\rho}\|\;d\theta\;\leq\;k{\pi}$, where $z=re^{i\theta}$, $k\;\geq\;2$ and $0\;{\leq}\;\rho\;{\leq}\;p$. We use the class $P_k(\rho)$ to introduce a new class of multivalent analytic functions and define an integral operator $L_{n+p-1}(f)\;\;=\;f_{n+p-1}^{-1}\;*\;f$ for f(z) belonging to this class. We derive some interesting properties of this generalized integral operator which include inclusion results and radius problems.

Crystal Structure of N[1(benzotriazol-1-yl)butyl]-p-nitroaniline (N-[1-(benzotriazol-1-yl)butyl]-p-nitroaniline의 구조)

  • Jo, So-Ra;Kim, Mun-Jip;Seong, Nak-Do
    • Korean Journal of Crystallography
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    • v.5 no.2
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    • pp.78-84
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    • 1994
  • The crystal structure of N-11-(benzotriazol-1-yl)butyl]-P-nitroaniline ( C16H17N502) has been determinedfromsingle crystal x-ray diffractionstudy:C16H17N502 monoclinic, P21/n, a=17542(2)A, b=10.755(3)A, c=8.891(1)A, β=104.58(1)˚, V=1623.4(5)A3, 7=293(2)K, Z=4, Cuka(A = 1.5418A) , The molecular structure was solved was by direct meshed refined by full-matrix least squares to a final R =0.0411 for 2248 unique observed [F≥4o(p) ] reflections and 255 Parameters. The crystal structure is stabilized by intermolecular N (11) -Hl 1 (Nl 1) ‥‥N (3) hydrogen bond with N(11) ‥‥ N(3) =3.136(2)A and N(11)-Hll(Nll)‥‥N(3) =164.1(15) ˚.

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Optoelectric properties of gate-tunable n-MoS2/n-WSe2 heterojunction with proper electrode metals

  • Lee, Seom-Gyun;Park, Min-Ji;Yu, Gyeong-Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.332.2-332.2
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    • 2016
  • Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated a p-n heterojunction consisting of p-type WSe2 and n-type MoS2 flakes since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions exhibits gate-tunable rectifying behaviors and photovoltaic effects (ECE ~ 0.2%) indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. In addition, the photocurrent mapping images indicate that the photovoltaic effects comes from the junction area. Possible origins of gate-tunability are discussed.

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On Convergence in p-Mean of Randomly Indexed Partial Sums and Some First Passage Times for Random Variables Which Are Dependent or Non-identically Distributed

  • Hong, Dug-Hun
    • Journal of the Korean Statistical Society
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    • v.25 no.2
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    • pp.175-183
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    • 1996
  • Let $S_n,n$ = 1, 2,... denote the partial sums of not necessarily in-dependent random variables. Let N(c) = min${ n ; S_n > c}$, c $\geq$ 0. Theorem 2 states that N (c), (suitably normalized), tends to 0 in p-mean, 1 $\leq$ p < 2, as c longrightarrow $\infty$ under mild conditions, which generalizes earlier result by Gut(1974). The proof follows by applying Theorem 1, which generalizes the known result $E$\mid$S_n$\mid$^p$ = o(n), 0 < p< 2, as n .rarw..inf. to randomly indexed partial sums.

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MULTI-POINT BOUNDARY VALUE PROBLEMS FOR ONE-DIMENSIONAL p-LAPLACIAN AT RESONANCE

  • Wang Youyu;Zhang Guosheng;Ge Weigao
    • Journal of applied mathematics & informatics
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    • v.22 no.1_2
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    • pp.361-372
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    • 2006
  • In this paper, we consider the multi-point boundary value problems for one-dimensional p-Laplacian at resonance: $({\phi}_p(x'(t)))'=f(t,x(t),x'(t))$, subject to the boundary value conditions: ${\phi}_p(x'(0))={\sum}^{n-2}_{i=1}{\alpha}_i{\phi}_p(x'({\epsilon}i)),\;{\phi}_p(x'(1))={\sum}^{m-2}_{i=1}{\beta}_j{\phi}_p(x'({\eta}_j))$ where ${\phi}_p(s)=/s/^{p-2}s,p>1,\;{\alpha}_i(1,{\le}i{\le}n-2){\in}R,{\beta}_j(1{\le}j{\le}m-2){\in}R,0<{\epsilon}_1<{\epsilon}_2<...<{\epsilon}_{n-2}1,\;0<{\eta}1<{\eta}2<...<{\eta}_{m-2}<1$, By applying the extension of Mawhin's continuation theorem, we prove the existence of at least one solution. Our result is new.

Effect of Zinc Vacancy on Carrier Concentrations of Nonstoichiometric ZnO

  • Kim, Eun-Dong;Bahng, Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.17-21
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    • 2001
  • We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

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Reduction of N-Arylpyridinium Compounds by Sodium Borohydride and Dithionite: Regioselectivity and Isomerization of Reduction Products

  • Koh, Park, Kwang-Hee;Han, Du-Hee;Shin, Dae-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.7 no.3
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    • pp.201-204
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    • 1986
  • Reduction of N-arylpyridinium compounds by $NaBH_4$ gave mixtures of the corresponding 1,2-dihydropyridine(major) and 1,4-dihydropyridine(minor), whereas similar reduction by $Na_2S_2O_4$ produced 1,4-dihydropyridines regioselectively. The proportion of 1,4-isomer in the product by $NaBH_4$ reduction appeared to increase with the electron-donating ability of N-aryl groups. When the N-aryl group is p-methylphenyl, p-ethylphenyl or p-methoxyphenyl, the 1,2-dihydropyridines in ethanol-water (4:1) solutions isomerized to the corresponding 1,4-dihydropyridines. N-(p-methylphenyl)-1,2-dihydropyridine and N-(p-ethylphenyl)-1,2-dihydropyridine in solid state also isomerized to the corresponding 1,4-dihydropyridines. The different behaviors of reduction among N-arylpyridiniums and isomerization of the reduction products depending on the substituent in N-aryl group were explained in terms of difference in the electronic effects of the substituents.

Synthesis of Anticoagulant 3-(N-Aryalmino)-1,4-Naphthoquinones(III) (항응고성의 3-(N-Arylamino)-1,4-Naphthoquinone 유도체 합성(III))

  • Ryu, Chung-Kyu
    • YAKHAK HOEJI
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    • v.34 no.6
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    • pp.422-428
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    • 1990
  • 2,3-Dibromo-1,4-naphthoquinone was reacted with p-aminobenzoic acid, 2-aminopyridine, 2-amino-4-metylpyridine, m-nitroaniline, sulfathiazol, p-chloroaniline, phenetidine and 2-bromo-3-(N-arylamino)-1,4-naphthoquinones($1{\sim}8$). 2,3-Epoxy-2,3-dihydro-1,4-naphthoquinone was also reacted with p-amonobenzoic acid, p-toluidine, p-chloroaniline, m-chloroaniline, m-nitroaniline, p-phenetidine, N,N-dimethyl-1,4-pheylenediamine as a ring opening and dehydogenation to form 2-hydroxy-3-(N-arylamino)-naphthoquinones ($9{\sim}16$) in good yield. These new compounds($1{\sim}16$) are expected to have a biological activities such as anticoagulant and cytotoxic.

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