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Survey of Perception of Complementary and Alternative Therapies (CAT) (암환자를 돌보는 일부 종합병원 간호사의 보완대체요법에 대한 인식도)

  • Kim, Keum-Soon;Yi, Myung-Sun;An, Kyung-Eh;Yu, Han-Jin;Kwon, So-Hi
    • Journal of Korean Academy of Fundamentals of Nursing
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    • v.13 no.3
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    • pp.457-466
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    • 2006
  • Purpose: This study was done to investigate oncology nurses' perception, attitude, knowledge and practice of CAT and to describe nurses' needs for education on CAT Method: A cross-sectional descriptive study was conducted. A total of 270 oncology nurses working at four medical centers in Seoul and Kyungki participated in this study. They completed the questionnaire between December 2005 and February 2006. Results: Oncology nurses perceived CAT as possible nursing interventions, but felt that there was no conclusive evidence on effectiveness/safety. Of the participants 44.4% have used CAT for themselves, and 73.9% of them were satisfied after using CAT. Two biggest reasons for CAT use were symptom control and emotional support. However, 80.8% of the participants had not had any training related to CAT Both nurses who have used CAT and those who have been trained to practice CAT represented a more positive perception toward CAT (p=.000). The biggest perceived obstacles to the practice of CAT were concerns about side effects (71.2%) and lack of knowledge and skill (69.6%). The most favorable CAT modalities in both practice and training were mind-body medicine. Conclusion: Overall oncology nurses' perception toward CAT was encouraging. However a high number of the nurses reported lack of knowledge and skill in CAT Education and training strategy for CAT need to be developed.

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Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide

  • Lee, Sang-Youl;Yang, Seung-Dong;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Kim, Seong-Hyeon;Lee, Hi-Deok;Lee, Ga-Won;Oh, Jae-Sub
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.5
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    • pp.250-253
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    • 2013
  • In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

Disulfide Bond Bridged Divalent Antibody-Toxin, $(Fab-PE38fl)_2$ with the Toxin PE38 Fused to the Light Chain

  • Won, Jae-Seon;Choe, Mu-Hyeon
    • Journal of Microbiology and Biotechnology
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    • v.18 no.8
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    • pp.1475-1481
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    • 2008
  • B3 antibody specifically binds the $Lewis^Y$-related carbohydrate antigen of many carcinomas, and it is used as a model antibody in this study. In a previous study, the Fab fragment of the antibody was fused to a 38 kDa truncated form of Pseudomonas exotoxin A, PE38, to make Fab-PE38, where PE38 is fused to the Fd fragment of the Fab domain. This parent monomer molecule, Fab-PE38, had no cysteine in the hinge region, and it could not make a disulfide bond to form a disulfide bond bridged homodimer. In this study, we constructed three different kinds of divalent Fab-toxin fusion homodimers where the toxin is fused to the light chain of Fab, $(Fab-PE38fl)_2$. In addition to the PE38 toxin fused to the light chain, these three molecules have different hinge sequences hi, h2, and h3 making Fabh1-, Fabh2-, and Fabh3-PE38fl monomers, respectively. These hinges contain only one cysteine on different positions of the hinge sequence. The disulfide bond between the hinge region of two monomers forms homodimers $(Fabh1-PE38fl)_2$, $(Fabh2-PE38fl)_2$, and $(Fabh3-PE38fl)_2$. The refolding yields of these dimers were 5-16-fold higher than a previously constructed dimer where the PE38 was fused to the Fd fragment $(Fabh2-PE38)_2$ [8]. Our data suggest that the steric repulsion between the two PE38s in $(Fabh1-PE38)_2$ during disulfide bridge formation is relieved by fusing it at the end of the light chain. The best cytotoxicity value of these dimers showed about 2.5-fold higher on an MCF7 cell line than that of the monovalent reference molecule in ng/ml scale, which is 15-fold higher in pM scale.

Purification and Characterization of the Laccase Involved in Dye Decolorization by the White-Rot Fungus Marasmius scorodonius

  • Jeon, Sung-Jong;Lim, Su-Jin
    • Journal of Microbiology and Biotechnology
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    • v.27 no.6
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    • pp.1120-1127
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    • 2017
  • Marasmius scorodonius secretes an extracellular laccase in potato dextrose broth, and this enzyme was purified up to 206-fold using $(NH_4)_2SO_4$ precipitation and a Hi-trap Q Sepharose column. The molecular mass of the purified laccase was estimated to be ~67 kDa by SDS-PAGE. The UV/vis spectrum of the enzyme was nontypical for laccases, and metal content analysis revealed that the enzyme contains 1 mole of Fe and Zn and 2 moles of Cu per mole of protein. The optimal pH for the enzymatic activity was 3.4, 4.0, and 4.6 with 2,2'-azino-bis(3-ethylbenzothazoline-6-sulfonate) (ABTS), guaiacol, and 2,6-dimethoxy phenol as the substrate, respectively. The optimal temperature of the enzyme was $75^{\circ}C$ with ABTS as the substrate. The enzyme was stable in the presence of some metal ions such as $Ca^{2+}$, $Cu^{2+}$, $Ni^{2+}$, $Mg^{2+}$, $Mn^{2+}$, $Ba^{2+}$, $Co^{2+}$, and $Zn^{2+}$ at a low concentration (1 mM), whereas $Fe^{2+}$ completely inhibited the enzymatic activity. The enzymatic reaction was strongly inhibited by metal chelators and thiol compounds except for EDTA. This enzyme directly decolorized Congo red, Malachite green, Crystal violet, and Methylene green dyes at various decolorization rates of 63-90%. In the presence of 1-hydroxybenzotriazole as a redox mediator, the decolorization of Reactive orange 16 and Remazol brilliant blue R was also achieved.

Bisphenol A Exposure and Childhood Obesity (Bisphenol A 노출과 소아비만)

  • Yi, Bit-Na;Shin, Hye-Jung;Na, Hyun-Kyung;Lee, Na-Kyung;Yang, Mi-Hi
    • Environmental Analysis Health and Toxicology
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    • v.24 no.4
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    • pp.287-292
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    • 2009
  • Over the a few decades, the incidences of obesity and associated metabolic syndrome diseases have been increased dramatically and resulted in a global health crisis. Recent findings suggest endocrine disrupting chemicals (EDCs) as an obesogen, because they disrupt normal development and homeostatic controls over adipogenesis and energy balance in obesity. Furthermore, risk of cardiovascular disease and mortality is elevated among those who were obese during childhood. Thus, we focused on etiology of obesity in children and performed biological monitoring of bisphenol A (BPA), which is a broadly exposed EDC in environment. Study subjects were age and sex-matched obese and normal children in Seoul (N=52; age, $8.67{\pm}1.46$ years). Exposure levels of BPA were analyzed with HPLC/FLD as a conjugated form in urine. As results, ranges of urinary BPA were 0~54.38 ${\mu}g/g$ creatinine (median, 4.57 ${\mu}g/g$ creatinine). Levels of urinary BPA were 1.7 fold higher in the obese children than those in the controls (medians of obese and control children, 7.31 and 4.25 ${\mu}g/g$ creatinine, respectively, p=0.22). In the near future, enlarge scaled studies should be performed to confirm the risk of BPA for obesity.

Evaluation of End-of-Life Nursing Education Consortium-Geriatric Train-the-Trainer Program in Korea

  • Kim, Boon-Han;Kim, Hyun-Sook;Yu, Su-Jeong;Choi, Sung-Eun;Jung, Yun;Kwon, So-Hi
    • Korean Journal of Adult Nursing
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    • v.24 no.4
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    • pp.390-397
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    • 2012
  • Background: Few nurses are trained in palliative care for long-term care in Korea. The End-of-Life Nursing Education Consortium (ELNEC)-Geriatric training program improves nurses' ability to promote palliative care for the elderly. Purpose: The aim of this study was to evaluate nurses' satisfaction and knowledge following the attendance at the ELNEC-Geriatric curriculum on nurses' knowledge of palliative care. Methods: Nine ELNEC-Geriatric modules were presented to 203 interdisciplinary professionals on July 1 and 3, 2010, in Seoul, South Korea. The Palliative care quiz for nursing (PCQN) was used to evaluate nurses' knowledge. Of all the participants, 128 nurses were completed the questionnaire. Of these nurses, 45.2% were staff nurses and 73.4% were hospital nurses. Results: Approximately eight nine percent of the nurses reported previous experience in caring for dying patients and attending various hospice palliative care training programs. Overall program satisfaction of the participants was 4.03 on a 5-point scale, and their mean of the total PCQN score was 12.75 out of 20 after participating in ELNEC-Geriatric course, which was a significant improvement (p=.022) from the pretest. Conclusion: The results of this study demonstrate that ELNEC-Geriatric curriculum was successfully implemented and significantly contributed to increasing the nurses' knowledge for palliative care in long-term care in Korea.

Study on the Hydrogen Treatment Effect of Vacuum deposited Pentacene Thin Film Transistors

  • Lee, Joo-Won;Chang, Jae-Won;Kim, Hoon;Kim, Kwang-Ho;Kim, Jai-Kyeong;Kim, Young-Chul;Lee, Yun-Hi;Jang, Jin;Ju, Byeong-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.668-672
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    • 2003
  • In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

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Selective etching characteristics of ITO/semiconductor and ITO/BaTiO3 structures by reactive ion ethcing (Reactive Ion Etching에 의한 ITO/반도체 및 ITO/BaTiO3 구조의 선택적 에칭 특성)

  • Han, Il-Ki;Lee, Yun-Hi;Kim, Hwe-Jong;Lee, Seok;Oh, Myung-Hwan;Lee, Jung-Il;Kim, Sun-Ho;Kang, Kwang-Nham;Park, Hong-Lee
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.152-158
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    • 1995
  • Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.

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Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

  • Kwon, Sung-Kyu;Kwon, Hyuk-Min;Kwak, Ho-Young;Jang, Jae-Hyung;Shin, Jong-Kwan;Hwang, Seon-Man;Sung, Seung-Yong;Lee, Ga-Won;Lee, Song-Jae;Han, In-Shik;Chung, Yi-Sun;Lee, Jung-Hwan;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.655-661
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    • 2013
  • In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

Process Temperature Dependence of Al2O3 Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

  • Oh, Sung-Kwen;Shin, Hong-Sik;Jeong, Kwang-Seok;Li, Meng;Lee, Horyeong;Han, Kyumin;Lee, Yongwoo;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.581-588
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    • 2013
  • This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.