Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Selective etching characteristics of ITO/semiconductor and ITO/BaTiO3 structures by reactive ion ethcing

Reactive Ion Etching에 의한 ITO/반도체 및 ITO/BaTiO3 구조의 선택적 에칭 특성

  • Han, Il-Ki (Dive. Of Elec., and Information Technology. KIST) ;
  • Lee, Yun-Hi (Dive. Of Elec., and Information Technology. KIST) ;
  • Kim, Hwe-Jong (Dive. Of Elec., and Information Technology. KIST) ;
  • Lee, Seok (Dive. Of Elec., and Information Technology. KIST) ;
  • Oh, Myung-Hwan (Dive. Of Elec., and Information Technology. KIST) ;
  • Lee, Jung-Il (Dive. Of Elec., and Information Technology. KIST) ;
  • Kim, Sun-Ho (Dive. Of Elec., and Information Technology. KIST) ;
  • Kang, Kwang-Nham (Dive. Of Elec., and Information Technology. KIST) ;
  • Park, Hong-Lee (Dept. of Physics, Yonsei Univ.)
  • 한일기 (한국과학기술연구원 정보전자연구부) ;
  • 이윤희 (한국과학기술연구원 정보전자연구부) ;
  • 김회종 (한국과학기술연구원 정보전자연구부) ;
  • 이석 (한국과학기술연구원 정보전자연구부) ;
  • 오명환 (한국과학기술연구원 정보전자연구부) ;
  • 이정일 (한국과학기술연구원 정보전자연구부) ;
  • 김선호 (한국과학기술연구원 정보전자연구부) ;
  • 강광남 (한국과학기술연구원 정보전자연구부) ;
  • 박홍이 (연세대학교 물리학과)
  • Published : 1995.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.

Keywords