• 제목/요약/키워드: pH threshold

검색결과 164건 처리시간 0.028초

Investigation of Plasma Damage and Restoration in InGaZnO Thin-Film Transistors

  • 정하동;박정훈;조원주
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.209.1-209.1
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    • 2015
  • Indium gallium zinc oxide (IGZO), indium zinc oxide (IZO) 그리고 zinc tin oxide (ZTO) 같은 zinc oxide 기반의 산화물 반도체는 높은 이동도, 투과도 그리고 유연성 같은 장점을 갖고 있어, display application의 backplane 소자로 적용되고 있다. 또한 최근에는 산화물 반도체를 이용한 thin-film transistor (TFT) 뿐만아니라 resistive random access memory (RRAM), flash memory 그리고 pH 센서 등 다양한 반도체 소자에 적용을 위한 연구가 활발히 진행 중이다. 그러나 zinc oxide 기반의 산화물 반도체의 전기 화학적 불안정성은 위와 같은 소자에 적용하는데 제약이 있다. 산화물 반도체의 안정성에 영향을 미치는 다양한 요인들 중 한 가지는, sputter 같은 plasma를 이용한 공정 진행 시 active layer가 plasma에 노출되면서 threshold voltage (Vth)가 급격하게 변화하는 plasma damage effect 이다. 급격한 Vth의 변화는 동작 전압의 불안정성을 가져옴과 동시에 누설전류를 증가시키는 결과를 초래 한다. 따라서 본 연구에서는, IGZO 기반의 TFT를 제작 후 plasma 분위기에 노출시켜, power와 노출 시간에 따른 전기적 특성 변화를 확인 하였다. 또한, thermal annealing을 적용하여 열처리 온도와 시간에 따른 Vth의 회복특성을 조사 하였다. 이러한 결과는 추후 산화물 반도체를 이용한 다양한 소자 설계 시 유용할 것으로 기대된다.

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Diphenylhydantoin 및 수종(數種)의 중추신경계(中樞神經系)에 작용(作用)하는 약물(藥物)이 흰쥐 대뇌피질절편(大腦皮質切片)의 산소소비량(酸素消費量) 및 non-inulin space $Na^+$, $K^+$농도(濃度)에 미치는 영향(影響) (The Effects of Diphenylhydantoin and Several other Agents Acting on CNS on the $QO_2$ and Non-inulin Space $Na^+$, $K^+$ Concentration in Cerebral Cortcial Slices of Rat)

  • 마천일;임정규;박찬웅
    • 대한약리학회지
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    • 제5권2호
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    • pp.87-92
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    • 1969
  • The effects of dephenylhydantoin, strychnine, coramine, d-amphetamine and chlorpromazine on $QO_2$ and non-inulin space $Na^+$, $K^+$ concentration of rat cerebral cortical slices incubated in pH 7.4 glycylglycine glucose saline was investigated. In general, there are decreased non-inulin space $Na^+$ concentration or increased non-inulin space $K^+$ concentration or both when the ratio of respiration to non-inulin space is greater than control group except in case of chlorpromazine $10^{-4}\;M$. And it is suggested that the ratio of respiration to non-inulin space is responsible more closely for the non-inulin space Na, K concentration than $QO_2$ expressed per tissue wet weight. Effects of diphenylhydantoin and several other agents on electrolytes and the electroshock seizure threshold are discussed.

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Simulation of 4H-SiC MESFET for High Power and High Frequency Response

  • Chattopadhyay, S.N.;Pandey, P.;Overton, C.B.;Krishnamoorthy, S.;Leong, S.K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권3호
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    • pp.251-263
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    • 2008
  • In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

고내압 SiC-IGBT 소자 소형화에 관한 연구 (A Study on High Voltage SiC-IGBT Device Miniaturization)

  • 김성수;구상모
    • 한국전기전자재료학회논문지
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    • 제26권11호
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    • pp.785-789
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    • 2013
  • Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

Electrical characteristics of poly-Si NVM by using the MIC as the active layer

  • Cho, Jae-Hyun;Nguyen, Thanh Nga;Jung, Sung-Wook;Yi, Jun-Sin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.151-151
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    • 2010
  • In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

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Sera Taken from Aged Korean Native Steers Increase Adipocyte Differentiation

  • Choi, Chang-Weon
    • 농업생명과학연구
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    • 제45권2호
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    • pp.85-92
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    • 2011
  • The current study was conducted to investigate effects of sera taken from Hanwoo at different age on adipocyte differentiation. Sera were taken from Korean native (Hanwoo) steers at 6, 12, 18, and 24 months of age, respectively and supplemented to 3T3-L1 preadipocytes after the cells reached confluence and maintained 10 days thereafter. For the first 2 days (48 h), cells were induced to differentiate by addition of differentiation factors, methylisobutylxanthine, daxamethasone, and insulin. After the differentiation, the cells were incubated without differentiation factors except insulin. The cells lost their fibroblastic shape and showed round-up appearances after 10 days incubation with FBS and the sera of Hanwoo steers. Big lipid droplets appeared in the cells cultured with FBS and the sera taken from Hanwoo at 18 and 24 months of age. After 18 months of age, GPDH activity was statistically higher than 6 and/or 12 months of age (P < 0.05). Based on morphology and Sn-glycerol-3-phosphate dehydrogenase activities, Hanwoo steers expressed aged-dependent adipogenic activities, indicating that aged sera may result in high adipocyte differentiation. It is concluded that the 18 months of age may be 'threshold' to express major adipogenic activities. This may strongly support previous field studies reporting considerable increase in fat contents of Hanwoo carcass at over 18 months of age.

A Formation of the $Fluorocarbonated-SiO_2$ Films on Si(100) ASubstrate by $O_2/FTES-High$ Density Plasma CVD

  • Oh, Kyoung-Suk;Kang, Min-Sung;Lee, Kwang-Man;Kim, Duk-Soo;Kim, Doo-Chul;Choi, Chi-Kyu;Yun, Seak-Min;Chang, Hong-Young
    • 한국진공학회지
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    • 제7권s1호
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    • pp.106-117
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    • 1998
  • Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

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Business Model Types of Web3.0 Social Token Shaped by Tokenomics

  • Song, Minzheong
    • International journal of advanced smart convergence
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    • 제13권3호
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    • pp.156-169
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    • 2024
  • We look at three use cases by business model types of Web3.0 social tokens shaped by 'token eonomics (tokenomics).' As the platform token, 'Roll' mints unique tokens to creators' reputation and allows them to own the value they create. Creators incentivize their followers contributing to the community. Tokens issued on Roll have a fixed supply with 20% minted for creators and 80% distributed across three years. With 'Roll Memberships,' followers gain benefits across token-gated platforms and protocols while getting something in return from the creator. 'Roll Staking' allows creators to integrate their community into crypto-specific products like trading markets, enhancing the features being possible in a creator's community. As the community token, 'Whale' creates WHALE token backed by non-fungible tokens (NFTs), so that it derives its value from NFTs kept in NFT art collection, 'The Vault.' 'Hold-to-Play(H2P)' rewards distributed to token holders owning a minimum threshold of tokens allow them to access to exclusive access to benefits like airdrops, tips, rewards, and exclusive information. Whale DAO open to members locking 1,000 tokens allows them to post a proposal twice a month and to vote in the senate. DAO-Voter role allows members locking 500 tokens to access the vote in the senate, but not to present proposals. As the personal token, 'RAC' distributes RAC tokens to his loyal supporters as a reward. These tokens are available for exclusive content access. RacOS makes it possible for RAC Patreon subscribers to claim RAC tokens each month corresponding with their membership tier.

Sol-gel deposited TiInO thin-films transistor with Ti effect

  • Kim, Jung-Hye;Son, Dae-Ho;Kim, Dae-Hwan;Kang, Jin-Kyu;Ha, Ki-Ryong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.200-200
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    • 2010
  • In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

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용제에 따른 TIPS(triisopropylsilyl) Pentacene을 이용한 유기박막 트렌지스터의 전기적 특성에 관한 연구 (Investigation of Solvent Effect on the Electrical Properties of Triisopropylsilylethynyl(TIPS) Pentacene Organic Thin-film Transistors)

  • 김경석;김영훈;한정인;최광남;곽성관;김동식;정관수
    • 한국진공학회지
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    • 제17권5호
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    • pp.435-441
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    • 2008
  • 본 논문은 TIPS Pentacene을 유기반도체로 사용한 유기박막 트랜지스터의 용제에 따른 전기적 특성에 대한 연구로서, 용제로는 chlorobenzene, p-xylene, chloroform, toluene을 사용하였으며, 회전 도포 방법을 사용하여 TIPS pentacene을 혼합하여 적층하였다. chlorobenzene을 사용하여 만들어진 유기박막 트랜지스터는 $1.0{\times}10^{-2}cm^2/V{\cdot}s$의 전계효과 이동도, $4.3{\times}10^3$의 on/off 비율, 5.5 V의 문턱전압의 특성을 보였다. 반대로, chloroform을 사용하여 만들어진 유기박막 트랜지스터는 $5.8{\times}10^{-7}cm^2/V{\cdot}s$의 전계효과 이동도, $1.1{\times}10^2$의 on/off 비율, 1.7 V의 문턱전압의 특성을 보였다. 또한 각 용제에 따른 TIPS pentacene 결정크기를 AFM을 통하여 측정하였다. 이와 같은 결과들을 통하여, 더 높은 끊는점을 가진 용제는 TIPS Pentacene의 더 큰 결정 크기와 높은 결정화 성향으로 인하여 더 좋은 전기적 특성을 가지는 것을 확인할 수 있었으며, 본 실험에서는 끓는점이 가장 높은 chlorobenzene을 사용한 TIPS Pentacene 유기박막 트랜지스터가 가장 좋은 전기적 특성을 나타내는 것을 확인하였다.