• Title/Summary/Keyword: p-type oxide

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Characterization and Fabrication of Tin Oxide Thin Film by RF Reactive Sputtering (RF Reactive Sputtering법에 의한 산화주석 박막의 제조 및 특성)

  • Kim, Young-Rae;Kim, Sun-Phil;Kim, Sung-Dong;Kim, Sarah Eun-Kyung
    • Korean Journal of Materials Research
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    • v.20 no.9
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    • pp.494-499
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    • 2010
  • Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

Cupric oxide thin film as an efficient photocathode for photoelectrochemical water reduction

  • Park, Jong-Hyun;Kim, Hyojin
    • Journal of the Korean institute of surface engineering
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    • v.55 no.2
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    • pp.63-69
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    • 2022
  • Preparing various types of thin films of oxide semiconductors is a promising approach to fabricate efficient photoanodes and photocathodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility of an efficient photocathode for PEC water reduction of a p-type oxide semiconductor cupric oxide (CuO) thin film prepared via a facile method combined with sputtering Cu metallic film on fluorine-doped thin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Cu metallic film in dry air. Characterization of the structural, optical, and PEC properties of the CuO thin film prepared at various Cu sputtering powers reveals that we can obtain an optimum CuO thin film as an efficient PEC photocathode at a Cu sputtering power of 60 W. The photocurrent density and the optimal photocurrent conversion efficiency for the optimum CuO thin film photocathode are found to be -0.3 mA/cm2 and 0.09% at 0.35 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for sunlight-driven hydrogen generation using a facile method.

Dual positional substrate specificity of rice allene oxide synthase-1: insight into mechanism of inhibition by type II ligand imidazole

  • Yoeun, Sereyvath;Rakwal, Randeep;Han, Oksoo
    • BMB Reports
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    • v.46 no.3
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    • pp.151-156
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    • 2013
  • Phylogenetic and amino acid sequence analysis indicated that rice allene oxide synthase-1 (OsAOS1) is CYP74, and is clearly distinct from CYP74B, C and D subfamilies. Regio- and stereo-chemical analysis revealed the dual substrate specificity of OsAOS1 for (cis,trans)-configurational isomers of 13(S)- and 9(S)-hydroperoxyoctadecadienoic acid. GC-MS analysis showed that OsAOS1 converts 13(S)- and 9(S)-hydroperoxyoctadecadi(tri)enoic acid into their corresponding allene oxide. UV-Visible spectral analysis of native OsAOS1 revealed a Soret maximum at 393 nm, which shifted to 424 nm with several clean isobestic points upon binding of OsAOS1 to imidazole. The spectral shift induced by imidazole correlated with inhibition of OsAOS1 activity, implying that imidazole may coordinate to ferric heme iron, triggering a heme-iron transition from high spin state to low spin state. The implications and significance of a putative type II ligand-induced spin state transition in OsAOS1 are discussed.

Development of Recombinant Escherichia coli Expressing Rhodotorula glutinis Epoxide Hydrolase (Rhodotorula glutinis의 epoxide hydrolase 고효율 발현 유전자 재조합 Escherichia coli 생촉매 개발)

  • Lee Soo-Jung;Kim Hee-Sook
    • Journal of Life Science
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    • v.16 no.3 s.76
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    • pp.415-419
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    • 2006
  • The epoxide hydrolase (EH) of Rhodotorula glutinis which has a high enantioselectivity against aromatic epoxide substrates was expressed to high levels in Escherichia coli based on codon usage. We analysed the Preference of codon usage between the yeast, R. glutinis, and bacteria, E. coli. E. coli, Rosetta(DE3)pLysS, harbors pRARE plasmid with tRNA genes for rare-codons was employed as a host strain. The recombinant E. coli expressing R. glutinis EH showed an enhanced enantioselective hydrolysis activity toward racemic styrene oxide. Enantiopure (S)-styrene oxide with a high enantiopurity of 99% ee (enantiomeric excess) was obtained from racemic substrates.

Mechanical Behaviour of Non-Oxide Boride Type Ceramics Formed on The AISI 1040 Plain Carbon Steel

  • Sen, Saduman;Usta, Metin;Bindal, Cuma;UciSik, A.Hikmet
    • The Korean Journal of Ceramics
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    • v.6 no.1
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    • pp.27-31
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    • 2000
  • A series experiments were performed to evaluate mechanical behavior of non-oxide boride type ceramics formed on the AISI 1040 plain carbon steel. Boronizing was performed in a slurry salt bath consisting of borax, boric acid, and ferro-silicon at $950^{\circ}C$ for 2-6h. The AISI 1040 steel used as substrate material was containing 0.4%C, 0.13%Si, 0.65%Mn, 0.02%P, 0.014%S. The presence of non-oxide boride type ceramics $Fe_2B $ and FeB formed on the surface of steel was confirmed by metallographic technique and X-ray diffraction (XRD) analysis. The hardness of borides measured via Vickers indenter with a load of 2N reached a microhardness of up to 1800 DPN. The hardness of unborided steel was 185 DPN. The fracture toughness of borides measured by means of Vickers indenter with a load of 10N was about 2.30 MPa.$m^{1/2}$. The thickness of boride layers ranged from 72$\mu\textrm{m}$ to 145$\mu\textrm{m}$. Boride layers have a columnar morphology.

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Work Function Modification of Indium Tin Oxide Thin Films Sputtered on Silicon Substrate

  • Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.351.2-351.2
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    • 2014
  • Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

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Fabrication of Depth Probe Type Semiconductor Microelectrode Arrays for Neural Recording Using Both Dry and wet Etching of Silicon (실리콘 건식식각과 습식식각을 이용한 신경 신호 기록용 탐침형 반도체 미세전극 어레이의 제작)

  • 신동용;윤태환;황은정;오승재;신형철;김성준
    • Journal of Biomedical Engineering Research
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    • v.22 no.2
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    • pp.145-150
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    • 2001
  • 대뇌 피질에 삽입하여 깊이에 따라 신경 신호를 기록하기 위한 탐침형 반도체 미세전극 어레이(depth-type silicon microelectrode array, 일명 SNU probe)를 제작하였다. 붕소를 확산시켜 생성된 고농도 p-type doping된 p+ 영역을 습식식각 정지점으로 사용하는 기존의 방법과 달리 실리콘 웨이퍼의 앞면을 건식식각하여 원하는 탐침 두께만큼의 깊이로 트렌치(trench)를 형성한 후 뒷면을 습식식각하는 방법으로 탐침 형태의 미세 구조를 만들었다. 제작된 반도체 미세전극 어레이의 탐침 두께는 30 $\mu\textrm{m}$이며 실리콘 건식식각을 위한 마스크로 6 $\mu\textrm{m}$ 두께의 LTO(low temperature oxide)를 사용하였다. 탐침의 두께는 개발된 본 공정을 이용해서 5~90 $\mu\textrm{m}$ 범위까지 쉽게 조절할 수 있었다. 탐침의 두께를 보다 쉽게 조절할 수 있게 됨에 따라 여러 신경조직에 필요한 다양한 구조의 반도체 미세전극 어레이를 개발할 수 있게 되었다. 본 공정을 이용해서 개발된 4채널 SUN probe를 사용하여 흰쥐의 제1차 체감각 피질에서 4채널 신경 신호를 동시에 기록하였으며, 전기적 특성검사에서 기존의 탐침형 반도체 미세전극, 텅스텐 전극과 대등하거나 우수한 신호대 잡음비(signal to noise ratio, SNR)특성을 가짐을 확인하였다.

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High Work Function of AZO Fhin Films as Insertion Layer between TCO and p-layer and Its Application of Solar Cells

  • Kang, Junyoung;Park, Hyeongsik;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.426.1-426.1
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    • 2016
  • We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

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Deficiency of iNOS Does Not Prevent Isoproterenol-induced Cardiac Hypertrophy in Mice

  • Cha, Hye-Na;Hong, Geu-Ru;Kim, Yong-Woon;Kim, Jong-Yeon;Dan, Jin-Myoung;Park, So-Young
    • The Korean Journal of Physiology and Pharmacology
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    • v.13 no.3
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    • pp.153-159
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    • 2009
  • We investigated whether deficiency of inducible nitric oxide synthase (iNOS) could prevent isoproterenol-induced cardiac hypertrophy in iNOS knockout (KO) mice. Isoproterenol was continuously infused subcutaneously (15 mg/kg/day) using an osmotic minipump. Isoproterenol reduced body weight and fat mass in both iNOS KO and wild-type mice compared with saline-infused wild-type mice. Isoproterenol increased the heart weight in both iNOS KO and wild-type mice but there was no difference between iNOS KO and wild-type mice. Posterior wall thickness of left ventricle showed the same tendency with heart weight. Protein level of iNOS in the left ventricle was increased in isoproterenol-infused wild-type mice. The gene expression of interleukin-6 (IL-6) and transforming growth factor-${\beta}$ (TGF-${\beta}$) in isoproterenol-infused wild-type was measured at 2, 4, 24, and 48-hour and isoproterenol increased both IL-6 (2, 4, 24, and 48-hour) and TGF-${\beta}$ (4 and 24-hour). Isoproterenol infusion for 7 days increased the mRNA level of IL-6 and TGF-${\beta}$ in iNOS KO mice, whereas the gene expression in wild-type mice was not increased. Phosphorylated form of extracellular signal-regulated kinases (pERK) was also increased by isoproterenol at 2 and 4-hour but was not increased at 7 days after infusion in wild-type mice. However, the increased pERK level in iNOS KO mice was maintained even at 7 days after isoproterenol infusion. These results suggest that deficiency of iNOS does not prevent isoproterenol-induced cardiac hypertrophy and may have potentially harmful effects on cardiac hypertrophy.