• BMB Reports
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• 제41권2호
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• pp.164-169
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• 2008

The tumor suppressor gene p53 regulates apoptotic cell death and the cell cycle. In this study, we investigated the role of p53 in nitric oxide (NO)-induced apoptosis in vascular smooth muscle cells (VSMCs). We found that the NO donor S-nitroso-N-acetyl-penicillamine (SNAP) increased apoptotic cell death in p53-deficient VSMCs compared with wild-type cells. The heme oxygen-ase (HO) inhibitor tin protoporphyrin IX reduced the resistance of wild-type VSMCs to SNAP-induced cell death. SNAP promoted HO-1 expression in both cell types. HO-2 protein was increased only in wild-type VSMCs following SNAP treatment; however, similar levels of HO-2 mRNA were detected in both cell types. SNAP significantly increased the levels of non-heme-iron and dinitrosyl iron-sulfur clusters in wild-type VSMCs compared with p53-deficient VSMCs. Moreover, pretreatment with FeSO4 and the carbon monoxide donor CORM-2, but not biliverdin, significantly protected p53-deficient cells from SNAP-induced cell death compared with normal cells. These results suggest that wild-type VSMCs are more resistant to NO-mediated apoptosis than p53-deficient VSMCs through p53-dependent up-regulation of HO-2.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.720-724
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• 2016

Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

• 한국초전도ㆍ저온공학회논문지
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• 제18권1호
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• pp.28-32
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• 2016

There are a few thousand abandoned metal mines in South Korea. The abandoned mines cause several environmental problems including releasing acid mine drainage (AMD), which contain a very high acidity and heavy metal ions such as Fe, Cu, Cd, Pb, and As. Iron oxides can be formed from the AMD by increasing the solution pH and inducing precipitation. Current study focused on the formation of iron oxide in an AMD and used the oxide for adsorption of heavy metals. The heavy metal adsorbed iron oxide was separated with a superconducting magnet. The duration of iron oxide formation affected on the type of mineral and the degree of magnetization. The removal rate of heavy metal by the adsorption process with the formed iron oxide was highly dependent on the type of iron oxide and the solution pH. A high gradient magnetic separation (HGMS) system successfully separated the iron oxide and harmful heavy metals.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.389.2-389.2
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• 한국세라믹학회지
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• 제38권10호
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• pp.871-875
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• 2001

Cobalt silicidation at sidewall spacer edge of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with post annealing treatment for capacitor forming process has been investigated as a function of dopant species. Cobalt silicidation of nMOSFET with n-type Lightly Doped Drain (LDD) and pMOSFET with p-type LDD produces a well-developed cobalt silicide with its lateral growth underneath the sidewall spacer. In case of pMOSFET with n-type LDD, however, a void is formed at the sidewall spacer edge with no lateral growth of cobalt silicide. The void formation seems to be due to a retarded silicidation process at the LDD region during the first Rapid Thermal Annealing (RTA) for the reaction of Co with Si, resulting in cobalt mono silicide at the LDD region. The subsequent second RTA converts the cobalt monosilicide into cobalt disilicide with the consumption of Si atoms from the Si substrate, producing the void at the sidewall spacer edge in the Si region. The void formed at the sidewall spacer edge serves as a resistance in the current-voltage characteristics of the pMOSFET device.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• The Korean Journal of Physiology and Pharmacology
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• 제7권6호
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• pp.357-362
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• 2003

Carbon monoxide (CO) is low molecular weight oxide gas that is endogenously produced under physiological conditions and interacts with another gas, nitric oxide (NO), to act as a gastrointestinal messenger. The aim of this study was to determine the effects of exogenous CO on L-type calcium channel currents of human jejunal circular smooth muscle cells. Cells were voltage clamped with 10 mM barium ($Ba^{2+}$) as the charge carrier, and CO was directly applied into the bath to avoid perfusion induced effects on the recorded currents. 0.2% CO was increased barium current ($I_{Ba}$) by $15{\pm}2$% ($mean{\pm}S.E.$, p<0.01, n=11) in the cells. To determine if the effects of CO on barium current were mediated through the cGMP pathway, cells were pretreated with 1-H-[1,2,4]oxadiazolo[4,3,-a]quinoxalin-1-one (ODQ, $10{mu}M$), a soluble guanylyl cyclase inhibitor, and exogenous CO (0.2%) had no effect on barium currents in the presence of ODQ ($2{\pm}1$% increase, n=6, p>0.05). CO mediates inhibitory neurotransmission through the nitric oxide pathway. Therefore, to determine if the effects of CO on L-calcium channels were also mediated through NO, cells were incubated with $N^G-nitro-L-arginine$ (L-NNA, 1 mM), a nitric oxide synthase inhibitor. After L-NNA pretreatment, 0.2 % CO did not increase barium current ($4{\pm}2$% increase, n=6, p>0.05). NO donor, SNAP ($20{\mu}M$) increased barium current by $13{\pm}2$% (n=6, p<0.05) in human jejunal smooth muscle cells. These data suggest that CO activates L-type calcium channels through NO/cGMP dependant mechanism.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.332-340
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• 2023

Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.

• 한국재료학회지
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• 제28권1호
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.