• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.546-550
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• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Journal of the Korean institute of surface engineering
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• v.34 no.4
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• pp.289-296
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• 2001

Ni-P electroformed layers were investigated for developing a steam generator tube repair technology in PWRs. The effects of an additive, RPP (Reagent over Pitting Protection) and agitation on mechanical properties and microstructure of the layer were evaluated. The addition of the RPP showed to inhibit the formation of pores, to refine the grain size, and to increase the residual stress in the layer. However, the agitation of the solution during electroforming was observed to increase pores in local regions of the electroformed layer, resulting in decreasing its mechanical properties. The heat treatment of the layer at $343^{\circ}C$ for 1 hr. precipitated the very fine particles of Ni3P in the layer, which inhibited grain growth and increased microhardness.

• Journal of the Korean Institute of Navigation
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• v.14 no.2
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• pp.77-82
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• 1990

In this paper the results for thin multi-layer InGaAsP($1.3{\mu}m$)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of $0.3^{\circ}C$/min and the growing temperature of $630^{\circ}C$ were obtained as $0.11 {\mu}m$/min and $0.06 {\mu}m$/min, respectively, by the uniform cooling with two phase solution technique.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.7B
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• pp.728-733
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• 2009

An ubiquitous environment has features like peer-to-peer and nomadic environments. Such features can be represented by peer-to-peer systems and mobile ad-hoc networks. P2P systems and MANETs share similar features, appealing for implementing P2P systems in MANET environment. However, if a P2P system designed for wired networks was applied to mobile ad-hoc environment, its performance was not good enough. Subsequently, this paper proposes a P2P system to improve performance using cross-layer design and the goodness of a node as a peer by using routing metric and P2P metric to choose favorable peers to connect. It also utilizes proactive approach for distributing peer information. The simulation results showed that the proposed system produced better performance in query success rate, query response time and energy consumption by reducing the routing path length.

• Journal of Powder Materials
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• v.27 no.4
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• pp.333-338
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• 2020

In this study, we fabricate a thin- and dense-BCuP-5 coating layer, one of the switching device multilayers, through a plasma spray process. In addition, the microstructure and macroscopic properties of the coating layer, such as hardness and bond strength, are investigated. Both the initial powder feedstock and plasma-sprayed BCuP-5 coating layer show the main Cu phase, Cu-Ag-Cu₃P ternary phases, and Ag phase. This means that microstructural degradation does not occur during plasma spraying. The Vickers hardness of the coating layer was measured as 117.0 HV, indicating that the fine distribution of the three phases enables the excellent mechanical properties of the plasma-sprayed BCuP-5 coating layer. The pull-off strength of the plasma-sprayed BCuP-5 coating layer is measured as 16.5 kg/㎠. Based on the above findings, the applicability of plasma spray for the fabrication process of low-cost multi-layered electronic contact materials is discussed and suggested.

• Journal of Korean Society of Forest Science
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• v.86 no.4
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• pp.489-501
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• 1997

This research was conducted to analyze the influence of the environmental factors on water quality such as pH, dissolved oxygen, and electrical conductivity of rainfall, throughfall, soil water(A and B layer), and stream water quality at a small forested watershed. Rainfall, throughfall, soil water(A and B layer), and stream water were sampled at the study sites in Kwanak Arboretum, Seoul National University in Mt. Kwanak for 14 months(Jul. 1, 1996~Aug. 31, 1997). Average rainfall pH value was 6.06(ranged from 5.02 to 6.60). Acid rain frequency(less than pH 5.6) was 16.7%. The lowest rainfall pH value was 5.02. Average of pH values in hydrological processes were decreasing in the following order, stream water>soil water [Prunus serrulata var, spontanea(B layer>A layer)]>throughfall(Prunus serrulata var. spontanea)>soil water [Carpinus laxiflora(B layer >A layer)]>throughfall(Carpinus laxiflora)>rainfall>soil water [Pinus rigida(B layer>A layer)]>throughfall(Pinus rigida). pH values of throughfall in Prunes serrulata var. spontanea and Carpinus laxiflora were higher in Pines rigida. Average of dissolved oxygen values in hydrological processes were decreasing in the order, stream water>throughfall(Carpinus laxiflora>Prunus serrulata var, spontanea>Pines rigida)>rainfall>soil water [Prunes serrulata var. spontanea(A layer)>Pines rigida(A layer)>Carpinus laxiflora(A layer)>Prunes serrulata var. spontanea(B layer)>Pines rigida(B layer)>Carpinus laxiflora(B layer)]. And average electrical conductivity values in hydrological processes were decreasing in the order, soil water (B layer>A layer)>throughfall(Pinus rigida>Prunes serrulata var, spontanea>Carpinus laxiflora)>stream water>rainfall. Multiple regression equations of electrical conductivity and $Mg^{2+}$, $Na^+$, total amount of cation, total amount of ion, and no. of before non-rain days in rainfall, throughfall, soil and stream water shows high significance(Multi R; 0.84).

• Corrosion Science and Technology
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• v.7 no.1
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• pp.40-44
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• 2008

Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

• Solar Energy
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• v.8 no.1
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• pp.68-73
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• 1988

In the glass/TCO/p-i-n a-Si/Al type of amorphous silicon solar cell, the effects on solar cell efficiency and metastability for the various kinds of TCO analyzed by SAM and ESCA, which was used to measure the diffusion profiles of In and Sn and the Fermi energy shifts in the TCO/p interface respectively. Indium which diffused into a-Si p-layer did not have any significant effects on the Fermi level shift of p-layer when the content of $B_2H_6/SiH_4$ in p-layer was at 1 gas%. The cell fabricated on $SnO_2$ turned out to have the best cell photovoltaic characteristics. ITO fabricated by electron beam deposition system, which was shown to have the greatest rate of diffusion of Indium in ITO/p interface produced the worst metastability among the cells tested.