• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.313-313
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• 2010

The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.219-219
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• 2013

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.275-277
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• 2007

유리를 기판으로 하는 superstrate pin 비정질 태양전지에서 전면투명전도막(TCO)과 p-layer의 계면이 태양전지의 효율을 내는데 가장 큰 기여를 한다. 전면투명전도막(TCO)으로 현재 일반적으로 사용되는 ZnO:Al는 $SnO_2:F$ 보다 전기,광학적으로 우수하고, 안개율(Haze)높으며, 수소 플라즈마에서의 안정성이 높은 특정을 갖고 있다. 그래서 박막 태양전지 특성향상에 매우 유리하나, 태양전지로 제조했을 때, $SnO_2:F$보다 충진율(Fill factor:F.F)과 V_{\infty}$ 가 감소한다는 단점을 가지고 있다. 본 실험실에서는 $SnO_2:F$의 F.F가 72%이 나온 반면 ZnO:Al의 F.F은 68%에 그쳤다. 이들 원인을 분석하기 위해 TCO/p-layer의 전기적 특성을 알아 본 결과, $SnO_2:F$보다 ZnO:Al의 직렬저항이 높게 측정되었다. 이러한 결과를 바탕으로 p-layer 에 R={$H_2/SiH_4$}=25로 변화, p ${\mu$}c$-Si:H/p a-SiC:H 로 p-layer 이중 증착, p-layer의 boron doping 농도를 증가시키는 실험을 하였다. 직렬저항이 가장 낮았던 p ${\mu$}c$-Si:H/p a-SiC:H 로 p-layer 이중 증착에서 Voc는 0.95V F.F는 70% 이상이 나왔다. 이들 각 p층의 $E_a$(Activation Energy)를 구해본 결과, ${\mu$}c$-Si:H의 Ea 가 가장 낮은 것을 관찰 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.436-436
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• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 P-I-N layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 p-layer의 thickness, activation energy 그리고 energy bandgap을 단계별로 변화시켰고 i-layer는 thickness를 n-layer는 thickness와 activation energy를 가변하여 최적의 조건을 찾아 분석하였다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3eV 그리고 energy bandgap 1.8eV에서, i-layer thickness 400nm, n-layer thickness 30nm, activation energy 0.2eV에서 최고 효율 11.08%를 달성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.437-437
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• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 I-layer 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 P-I-N layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 p-layer의 thickness, activation energy 그리고 energy bandgap을 단계별로 변화시켰고 i-layer는 thickness를 n-layer는 thickness와 activation energy를 가변하여 최적의 조건을 찾아 분석하였다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3eV 그리고 energy bandgap 1.8eV에서, i-layer thickness 400nm, n-layer thickness 30nm, activation energy 0.2eV에서 최고 효율 11.08%를 달성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.96-99
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• 2000

We fabricated electroluminescent(EL) devices which have a blended single emitting layer containing poly(N-vinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and its can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing applied voltage. In the consequence of the result, the external quantum efficiency of the devices that have a molar ratio 1:1 with LiF layer was 35 times larger than that of the device without LiF layer at 6V.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.253-255
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• 2009

박막태양전지에서 빛을 처음 받아들이는 p-layer는 전체적인 태양전지 특성에 큰 영향을 준다. 본 논문에서는 p-layer의 gas flow rate를 가변하여 증착한 P-I-N cell을 통해 DIV를 측정하고 분석하였다. 더불어 gas flow rate에 따른 p-layer의 특성변화를 토대로 시뮬레이션을 진행하여 실제 소자와 비교하여 보았다. simulation da와 experimental data를 비교해보면 전체적으로 유사한 경향성을 보이며 saturation current는 큰 차이를 보이지 않았으나 ideality factor와 series resistance에서 real device가 비교적 큰 값을 나타내는 것을 볼 수 있었다. 본 연구는 simulation data를 기반으로 real device를 제작하는데 큰 도움이 될 것이다.

• Journal of Powder Materials
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• v.29 no.3
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• pp.226-232
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• 2022

In this study, a new manufacturing process for a multilayer-clad electrical contact material is suggested. A thin and dense BCuP-5 (Cu-15Ag-5P filler metal) coating layer is fabricated on a Ag plate using a high-velocity oxygen-fuel (HVOF) process. Subsequently, the microstructure and bonding properties of the HVOF BCuP-5 coating layer are evaluated. The thickness of the HVOF BCuP-5 coating layer is determined as 34.8 ㎛, and the surface fluctuation is measured as approximately 3.2 ㎛. The microstructure of the coating layer is composed of Cu, Ag, and Cu-Ag-Cu3P ternary eutectic phases, similar to the initial BCuP-5 powder feedstock. The average hardness of the coating layer is 154.6 HV, which is confirmed to be higher than that of the conventional BCuP-5 alloy. The pull-off strength of the Ag/BCup-5 layer is determined as 21.6 MPa. Thus, the possibility of manufacturing a multilayer-clad electrical contact material using the HVOF process is also discussed.

• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.162-167
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• 2012

Ni-P/C multi-layer was synthesized by electroless plating and paste coating for better corrosion and surface conductance as a metallic bipolar plate. The Ni-P layer could be synthesized with the range of 2.6~22.4 at.% P contents and it's surface morphology and corrosion resistance depend on content of P. Corrosion resistance of the Ni-P layer in sulfuric acid by electrochemical test is similar with pure Ni. Surface resistance of pure Ni after corrosion was increased about 8% compared to pure Ni. On the other hand, that of the Ni-P/C composite with 20% carbon content was increased only 1%.