• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1205-1208
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• 1995

The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1097-1102
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• 2003

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

• Honam Mathematical Journal
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• v.27 no.3
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• pp.399-404
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• 2005

Let M be a finite commutative nilpotent algebra over a perfect field k of prime characteristic p and let $M^p$ be the sub-algebra of M generated by $x^p$, $x{\in}M$. Eggert[3] conjectures that $dim_kM{\geq}pdim_kM^p$. In this paper, we show that the conjecture holds for $M=R^+/I$, where $R=k[X_1,\;X_2,\;{\cdots},\;X_t]$ is a polynomial ring with indeterminates $X_1,\;X_2,\;{\cdots},\;X_t$ over k and $R^+$ is the maximal ideal of R generated by $X_1,\;X_2,{\cdots},\;X_t$ and I is a monomial ideal of R containing $X_1^{n_1+1},\;X_2^{n_2+1},\;{\cdots},\;X_t^{n_t+1}$ ($n_i{\geq}0$ for all i).

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.110.2-110.2
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• 2011

일본 Sanyo 사에 의해서 획기적으로 HIT 태양전지가 개발된 바 있다. 이러한 HIT 태양전지는 기존의 확산-접합 Si 태양전지에 비해서 저비용 고효율의 장점을 갖는다: 22% 이상의 변환효율, $200^{\circ}C$ 이하의 공정온도, 낮은 태양전지 온도 의존도, 높은 개방전압. 한편 Sanyo사의 HIT 태양전지는 n-형 Si 웨이퍼를 이용한 반면에, 최근 미국 National Renewable Energy Laboratory는 p-형 Si 웨이퍼를 이용해서 변환효율 19% 대의 HIT 태양전지를 개발한 바 있다. 그 동안 지속적으로 p-형 Si HIT 태양전지를 고효율화하기(< 22%) 위해서 많은 노력이 진행되어 왔지만 이와 같은 노력에도 불구하고 아직 p-형 HIT는 n-형 HIT 태양전지에 비해서 다소 성능면에서 떨어져 있다. 본 연구는 n- 및 p-형 실리콘 웨이퍼로 구성된 HIT 태양전지의 물리적인 차이점에 초점을 맞추고, 결정 및 비정질 실리콘 층의 역할에 대해서 연구하였다. 특히 태양전지 효율을 향상시키는 요소들로서 결정 실리콘의 불순물 준위(n- 및 p-형) 또는 비저항, 비정질 실리콘으로 구성된 emitter 층, intrinsic 층, 경계면이 고려되었다. 그리고 이러한 요소들이 HIT 태양전지에 미치는 영향을 조사하기 위해서 AMPS-1D 컴퓨터 프로그램을 사용하였고, 이를 통해서 HIT 태양전지의 결정 및 비정질 실리콘 층의 역할을 물리적 정량적으로 분석하였다. 본 연구에 적용되는 HIT는 ITO/a-Si:H(p+)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n+) 및 ITO/a-Si:H(n+)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/a-Si:H(p+)의 구조로서 다음과 같은 태양전지 특성을 갖는다: n-형 HIT의 경우, fill factor ~ 0.78, 단락전류밀도 ~ 38.1 $mA/cm^2$, 개방전압 0.74 V, 변환효율 22.3 % (그리고 p-형 HIT의 경우, fill factor ~ 0.76, 단락전류밀도 ~ 36.5 $mA/cm^2$, 개방전압 0.69 V, 변환효율 19.4 %).

• Journal of the Korean Society for information Management
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• v.6 no.1
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• pp.15-36
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• 1989

The r a p i d i n c r e a s e o f microcomputer technology has r e s u l t e d i n t h e broad a p p l i c a t i o n t o various f i e l d s . The purpose of t h l s paper 1s to design a computerized r e t r i e v a l system f o r nuclear information m a t e r i a l s using a microcomputer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• KSBB Journal
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• v.4 no.2
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• pp.65-68
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• 1989

In order to determin the optimum extraction condition for protein in a Chrysalis of Silk Worm, Temperature, Time, and pH variation were conducted in the extraction. N.S.I. and nitrogen contents of the extracts in this condition were identified by Kjeldaha method and a C.H.N. corder. The results were as follows; Crude protein and crude fat contents in the extracts were 23.34% and 15.61%, respectively. N.S.I. values with respect to the temperature variation were 6.7% at 6$0^{\circ}C$, 7.94% at 8$0^{\circ}C$ and 8.67% at 10$0^{\circ}C$ in the condition of pH 4, 1 hr. N.S.I. values in pH variation were 7.94% at pH4, 8.99% at pH6, 9.70% at pH8, 10.19% at pH 10 and 12.16% at pH 12 in the condition of 8$0^{\circ}C$, 1hr. N.S.I. values in extraction time variation were 8.67% in 1hr, 9.23% in 2hr and 9.76% in 3hr in the condition of 10$0^{\circ}C$, pH 4. The tendency of N.S.I. variation in this extration condition was reconfirmed also by a C.H.N. corder.

• Journal of applied mathematics & informatics
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• v.27 no.3_4
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• pp.829-842
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• 2009

Let {$X_{ni}|1\;{\le}\;i\;{\le}\;n$, $n\;{\ge}\;1$} be an array of rowwise negatively associated random variables and let $\alpha$ > 1/2, 0 < p < 2 ${\alpha}p\;{\ge}\;1$. In this paper we discuss $n^{{\alpha}p-2}h(n)$ max $_{1\;{\le}\;k{\le}n}\;|\;{\sum}^k_{i=1}\;X_{ni}|/n^{\alpha}\;{\to}\;0$ completely as $n\;{\to}\;{\infty}$ under not necessarily identically distributed with a suitable conditions and h(x) > 0 is a slowly varying function as $x\;{\to}\;{\infty}$. In addition, we obtained that $n^{{\alpha}p-2}h(n)$ max $_{1\;{\le}\;k{\le}n}\;|\;{\sum}^k_{i=1}\;X_{ni}|/n^{\alpha}\;{\to}\;0$ completely as $n\;{\to}\;{\infty}$ if and only if $E|X_{11}|^ph(|X_{11}|^{1/\alpha})\;<\;{\infty}$ and $EX_{11}\;=\;0$ under identically distributed case and some corollaries are obtained.

• Journal of Yeungnam Medical Science
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• v.13 no.1
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• pp.46-58
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• 1996

Inositol 1,4,5-triphosphate($InsP_3$) is a second messenger for mobilizing intracellular $Ca^{2+}$. It can be dephosphorylated by soluble and particulate forms on $InsP_3$ 5-phosphatase, or phosphorylated to produce inositol 1,3,4,5-tetrakisphosphate($InsP_3$) by $InsP_3$ 3-kinase. These enzymes represent possible targets for the regulation of the $InsP_3/InsP_4$ signal. $InsP_3$ 3-kinase which catalyses th ATP-dependent phosphorylation of $InsP_3$ was purified from bovine brain tissue. All operation were carried out at $4^{\circ}C$. Fresh tissure was homogenized and centrifuged. The supernatant was pooled. Proteins were precipitated from 10% polyethylene glycol, and suspended solution was applied to DEAE cellulose column for chromatography. As the result of above procedure, two isozymes of $InsP_3$ 3-kinase, I and II were obtained. Each isozyme was applied to Matriz green gel, Calmodulin-Affigel 15 column and subsequent phenyl-TSK HPLC column. Specific activites(SA) and fold of puriety were observed at each purification step of chromatography. At DEAE cellulose chromatography, SA were I, 0.6 and II, 4.8 nM/min/mg, and folds were I, 17.2 and II, 16.6. At Matrix green gel chromatography, SA were I, 18 and II, 11 nM/min/mg, folds were I, 62.1 and II, 38.0. At calmodulin-Affigel 15 column chromatography, SA were I, 19 and II, 13 nM/min/mg, folds were I, 65.5 and II, 44.8. Finally $InsP_3$ kinase I and II were purified 3,103-fold and 2,310-fold, and SA were I, 900 and II, 670 nM/min/mg, respectively. SDS-polyacrylamide gel electrophoresis elucidated 3 distinct fractions of Mr of 145,000, 85,000 and 69,500 from isozyme I, and 2 distinct fractions of Mr of 79,000 and 57,000 from isozyme II.