• Korean Journal of Materials Research
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• v.23 no.5
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• pp.255-259
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• 2013

An effect of thermal annealing on activating phosphorus (P) atoms in ZnO nanorods (NR) grown using a hydrothermal process was investigated. $NH_4H_2PO_4$ used as a dopant source reacted with $Zn^{2+}$ ions and $Zn_3(PO_4)_2$ sediment was produced in the solution. The fact that most of the input P elements are concentrated in the $Zn_3(PO_4)_2$ sediment was confirmed using an energy dispersive spectrometer (EDS). After the hydrothermal process, ZnO NRs were synthesized and their PL peaks were exhibited at 405 and 500 nm because P atoms diffused to the ZnO crystal from the $Zn_3(PO_4)_2$ particles. The solubility of the $Zn_3(PO_4)_2$ initially formed sediment varied with the concentration of $NH_4OH$. Before annealing, both the structural and the optical properties of the P-doped ZnO NR were changed by the variation of P doping concentration, which affected the ZnO lattice parameters. At low doping concentration of phosphorus in ZnO crystal, it was determined that a phosphorus atom substituted for a Zn site and interacted with two $V_{Zn}$, resulting in a $P_{Zn}-2V_{Zn}$ complex, which is responsible for p-type conduction. After annealing, a shift of the PL peak was found to have occurred due to the unstable P doping state at high concentration of P, whereas at low concentration there was little shift of PL peak due to the stable P doping state.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.752-755
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• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.206-208
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• 2000

0.65 mol% MgO-doped LiNbO$_3$single crystals were grown by CZ method. The obtained single crystals were colorless and transparent. Noncritically phase-matched second harmonic generation (SHG) of 532-nm radiation from 1064-nm in MgO-doped LiNbO$_3$has been investigated by using pulsed Nd:YAG laser. The phase-matching temperature was room temperature. SHG conversion efficiencies were typically achieved higher than 50% at the phase-matching temperature with no photorefractive damage in the region of fundamental power density which was used in this experiment. The thermo-birefringence coefficient and the electro-birefringence coefficient of SHG were calculated from the temperature phase-matching profile with the electric field.

• Journal of the Korean Ceramic Society
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• v.44 no.11
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• pp.650-654
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• 2007

[ $SnO_2$ ]-doped $TiO_2$ thin films were prepared from tin (IV) bis (acetylacetonate) dichloride and titanium diisopropoxide bis (acetylacetonate) with pluronic P123 or degussa P25 as a structural-directing agent. These hydrolyzed sol were spin coated onto Si(100) wafer substrate. The microstructure, morphology and bonding states of thin films were studied by field-emission scanning electron microscopy (FE-SEM), X-ray diffractometry (XRD), and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of these films was investigated by using indigo carmine solution.

• Environmental Engineering Research
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• v.13 no.4
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• pp.171-176
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• 2008

Studies on visible-light-driven photocatalysis of air pollutants at indoor air quality (IAQ) levels have been limited. Current study investigated visible-light derived photocatalysis with N-doped and S-doped titanium dioxide ($TiO_2$) for the control of benzene at indoor levels. Two preparation processes were employed for each of the two types of photocatalyst: urea-Degussa P-25 $TiO_2$ and titania-colloid methods for the N-doped $TiO_2$; and titanium isopropoxid- and tetraisopropoxide-thiourea methods for the S-doped $TiO_2$. Furthermore, two coating methods (EDTA- and acetylacetone-dissolving methods) were tested for both the N-doped and S-doped $TiO_2$. The two coating methods exhibited different photocatalytic degradation efficiency for the N-doped photocatalysts, whereas they did not exhibit any difference for the S-doped photocatalysts. In addition, the two doping processes showed different photocatalytic degradation efficiency for both the S-doped and N-doped photocatalysts. For both the N-doped and S-doped $TiO_2$, the photocatalytic oxidation (PCO) efficiency increased as the hydraulic diameter (HD) decreased. The degradation efficiency determined via a PCO system with visible-light induced $TiO_2$ was lower than that with UV-light induced unmodified $TiO_2$, which was obtained from previous studies. Nevertheless, it is noteworthy that for the photocatalytic annular reactor with the HD of 0.5 cm, PCO efficiency increased up to 52% for the N-doped $TiO_2$ and 60% for the S-doped $TiO_2$. Consequently, when combined with the advantage of visible light use over UV light use, it is suggested that with appropriate HD conditions, the visible-light-assisted photocatalytic systems can also become an important tool for improving IAQ.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.305-309
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• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1561-1563
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• 1998

A capacitive humidity sensor is used as a test device to characterize the performance of iodine doped polyphenylacetylene(PPA) thin films in relative humidity sensing application In comparison with undoped PPA thin films. the iodine doped PPA films showed higher sensitivity(0.19pF/%RH), better linearity(4.2%FS), much lower hysteresis and lower temperature coefficients(0.043 $\sim$ 0.067pF/$^{\circ}C$) over a wide range of relative humidity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.51-52
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• 2005

Phosphorus doped ZnO thin films on (001) $Al_2O_3$ substrate have been prepared by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. After deposition, phosphorus doped ZnO thin films have been annealed in vacuum, air, nitrogen, and oxygen ambients using pulsed Nd:YAG laser. We report the electrical properties of phosphorus doped ZnO thin films with the variation of the laser annealing conditions for the applications of optoelectronic devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.527-528
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• 2017

Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.