• Food Science of Animal Resources
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• v.28 no.1
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• pp.27-31
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• 2008

This study investigated the effects of copper and zinc sources on growth performance, nutrient digestibility, carcass traits and meat characteristics in finishing pigs. Dietary treatments included 1) inorganic copper ($CuSO_4{\cdot}5H_2O$ 30ppm), 2) organic copper (Cu-methionine, 30 ppm), 3) inorganic zinc (ZnO, 80 ppm) and 4) organic zinc (Zn-methionine, 80 ppm). ZnO treatment improved the ADFI (average daily feed intake) compared to Cu-met and Zn-met treatments (p<0.05) during 5 weeks of treatment. However, during the entire experimental period, the ADG (average daily gain), ADFI and F:G ratio (feed conversion ratio) were not significantly different among the treatments (p>0.05). DM and N digestibility were not significantly different among the treatments after 5 weeks (p>0.05). At the end of the experiment, DM and N digestibility were decreased with Zn-met treatment relative to the other three treatments. The pH value of meat from $CuSO_4$ treated pigs was greater than Zn-met and ZnO treated pigs (p<0.05). Sensory evaluation was carried out for randomly selected (n = 16) paired loin samples. Meat color levels were increased (p<0.05) with Cu treatments compared to Zn treatments. $CuSO_4$ decreased the marbling of meat relative to the other treatments (p<0.05). The firmness was greater with ZnO treatment compared to Cu-met and ZnO treatments (p<0.05). These results indicate that inorganic Zn can improve growth performance, however, inorganic Cu and Zn are as effective as organic Cu and Zn at improving nutrient digestibility, carcass traits and meat quality. This form of organic additive can be friendlier to the environment than inorganic supplements.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1277-1279
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• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.191.2-191.2
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• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.151-151
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• 2009

ZnO 박막은 큰 밴드 갭 및 가시광 영역에서 높은 광투과성을 가지며, 제조조건에 따라 비저항의 범위가 폭넓게 변화하므로 태양전지, 평판 디스플레이의 투명 전극뿐만 아니라 음향공전기, 바리스터 등에 이용되고 있다. ZnO 박막의 전도성을 향상시키기 위해서 일반적으로 Al, Ga, Ti, In, B, H(n-type), 등과 N, As(p-type)의 도펀트를 사용한다. 본 연구에서는 전기화학적인 방법을 사용하여 ITO/glass위에 ZnO film에 농도에 따른 Ga을 doping 하여 전기전도성 향상과 밴드갭을 넓힘으로서 전자의 recombination을 방지하여 유기태양전지의 효율을 높이는데 목적을 두었다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2021-2025
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• 2010

Electrical and structural properties were investigated on the effects of ZnO and the lead-free NKN-LST ceramics with the addition of ZnO were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of ZnO addition. For the NKN-LST-ZnO ceramics sintered at $1050^{\circ}C$, bulk density increased with the addition of ZnO and showed maximum value at addition 2.0mol% of ZnO. Curie temperature of the NKN-LST-ZnO ceramics slightly decreased with adding ZnO. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the small amount of ZnO addition, which might be due to the increase in density. The high piezoelectric properties = 153 pC/N, electromechanical coupling factor = 0.484 and dielectric constant = 2883 were obtained for the NKN-LST+0.5ZnO ceramics sintered at $1050^{\circ}C$ for 2h.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.166-166
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• 2012

We examined the distribution of Co ions of ferromagnetic n-type Zn(1-x)Co(x)O semiconducting films with the Co concentrations of 0.03~0.07 using x-ray absorption fine structure (XAFS) measurements at the Co and Zn K edges. Extended XAFS (EXAFS) revealed that Co ions mainly occupied the zinc sites of the films. X-ray absorption near edge structure (XANES) spectra demonstrated that the pre-edge peak of the Co K edge was substantially affected by the second neighboring Co ions at the zinc sites due to hybridizing of the Co 4p conduction electrons with the Co 3d bounded electrons. From XANES and EXAFS analysis using ab initio calculations, we found that Co ions uniformly occupied the zinc sites of the Zn (0.93) Co (0.07)O film, whereas the Co ions of the Zn (0.97) Co (0.03)O and Zn (0.95) Co (0.05)O films were substituted at localized zinc sites. The ferromagnetic properties of the Zn (0.93) Co(0.07)O film could be induced by direct interaction between the magnetic dipoles of the Co ions with a mean distance of 4.3 A or by Co 4p electron mediation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.370-371
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• 2007

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by. RF sputtering system. Substrate temperature and work pressure is $100^{\circ}C$ and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$. For sample deposited at $300^{\circ}C$, we observed full width at half maximum (FWHM) of 0.240 and good surface morphology.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.235-240
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• 2006

We investigated the effect of ZnO filler on the microstructure of $BaO-B_2O_3-ZnO-P_2O_5$ glass system to find an etching mechanism of barrier ribs. The sintering behavior of composites heated in the temperature range $560-600^{\circ}C$ was studied by volumetric shrinkage rate and microstructure. The etching test was carried out in $HNO_3$ solution at $50^{\circ}C$ for 10 min. The volumetric shrinkage of sintered sample decreased with the increased firing temperature because of the formation of two crystals. Glass and ZnO filler react forming the $BaZn_2(PO_4)_2$ crystal phases during the sintering process. Etching phenomenon of sintered samples by $HNO_3$ showed that the $BaZn_2(PO_4)_2$ crystal phase was strongly leached compared to glass matrix, crystal phases and fillers. Therefore, the control of interface by condition of sintering is so important to achieve etching effect in barrier ribs.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.565-571
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• 1992

Gas sensing properties of P-N contact ceramics, composed of ZnO and CuO pairs sintered at different temperatures, were studied for 1% CO gas. Between 10$0^{\circ}C$ and 32$0^{\circ}C$ temperature range, it was observed that 2-probe current-voltage (I-V) characteristics, temperature and voltage dependence of sensivities were dependant largely upon ZnO samples. Pairs including a ZnO sample sintered at 110$0^{\circ}C$ showed maximum senitivity of 9 and 13 depending upon counterpart CuO samples, at 260~29$0^{\circ}C$. On the other hand, pairs including a ZnO samples sintered at 90$0^{\circ}C$ showed increasing sensitivity within in the measured temperature range and maximum sensitivities were about 4.