• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2009.01a
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• pp.250-253
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• 2009

This paper presents NR (No Reference) Quality assessment method for IPTV or mobile IPTV. Because No Reference quality assessment method does not access the original signal so it is suitable for the real-time streaming service. Our proposed method use decoding parameters, such as quantization parameter, motion vector, and packet loss as a major network parameter. To evaluate performance of the proposed algorithm, we carried out subjective test of video quality with the ITU-T P.910 ACR (Absolute Category Rating) method and obtained the mean opinion score (MOS) value for QVGA 180 video sequence coded by H.264/AVC encoder. Experimental results show the proposed quality metric has a high correlation (84%) to subjective quality.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.269-271
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• 2005

Using optimized sputtering condition of a-Si and $SiO_2$ thin film, we can obtained the large grained poly-Si film on PES substrate. The gate dielectric grown by plasma enhanced atomic layer deposition, laser activation and organic interlayer dielectric material make TFTs on PES possible with mobility of $11cm^2/Vs$ (nMOS) and $7cm_2/Vs$ (pMOS).

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.782-786
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• 2001

Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.401-404
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• 2010

In multibit Sigma-Delta Modulator, DWA(Data Weighted Averaging) among the DEM(Dynamic Element Matching) techniques was widely used to get rid of non-linearity that caused by mismatching of unit capacitor in feedback DAC path. this paper proposed the improved DWA architecture by adjusting clock timing of the existing DWA architecture. 2n Register block used for output was replaced with 2n S-R latch block. As a result of this, MOS Tr. can be reduced and extra clock can also be removed. Moreover, two n-bit Register block used to delay n-bit data code is decreased to one n-bit Register. In order to confirm characteristics, DWA for the 3-bit output with the proposed DWA architecture was designed on 0.18um process under 1.8V supply. Compared with the existing architecture. It was able to reduce the number of 222 MOS Tr.

• The Journal of the Acoustical Society of Korea
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• v.28 no.3E
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• pp.99-108
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• 2009

In this paper, we suggest criteria for objective measurement of speech quality in mobile VoIP (Voice over Internet Protocol) services over wireless mobile internet such as mobile WiMAX networks. This is the case that voice communication service is available under other networks. When mobile VoIP service users in the mobile internet network based on packet call up PSTN and mobile network users, but there have not been relevant quality indexes and quality standards for evaluating speech quality of mobile VoIP. In addition, there are many factors influencing on the speech quality in packet network. Especially, if the degraded speech with packet loss transfers to the other network users through the handover, voice communication quality is significantly deteriorated by the transformation of speech codecs. In this paper, we eventually adopt the Gilbert-Elliot channel model to characterize packet network and assess the voice quality through the objective speech quality method of ITU-T P. 862. 1 MOS-LQO for the various call scenario from mobile VoIP service user to PSTN and mobile network users under various packet loss rates in the transmission channel environments. Our simulation results show that transformation of speech codecs results in the degraded speech quality for different transmission channel environments when mobile VoIP service users call up PSTN and mobile network users.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1463-1465
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• 1994

The electrical characteristics of $Al/Ta_2O_5/Si$ metal-oxide-semiconductor (MOS) capacitors were studied. $Ta_2O_5$ films on p-type silicon had been prepared by ionized cluster beam epitaxy technique (ICBE). This $Ta_2O_5$ films have low leakage current, high breakdown strength and low flat band shift. In this research, a single crystalline cpitaxial film of $Ta_2O_5$ has been grown on p-Si wafer using an ICBE technique. The native oxide layer ($SiO_2$) on the silicon substrate was removed below $500^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high temperature deposition. $Ta_2O_5$ films formed by ICBE technique can be received considerable attention for applications to coupling capacitors, gate dielectrics in MOS devices, and memory storage capacitor insulator because of their high dielectric constants above 20 and low temperature process.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.102-109
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• 1987

This study is carrier out to investigate the carrier injection and the characteristics of trapping for the CVD deposited Al2O3 film on Si substrates. Samples used are metal -Al2O3-Si Structure in which metal field plates are used with Aluminium or God. Canier injection and trapping, which result in flat band voltalge shift, occur at fields as low as 1~2 MV/cm. An approximate method is proposed for computing the location of the centroid of the trapped electrons in this paper. Results show that carriers are trapped near the injecting interface at fields less than about 5MV/cm. Because of continued charging, a steady state can not be reached. Therefore the unique I-V curve is obtained when the traps are initially empty. By utilization of applied voltage on each point of the fresh device sample, it is measured the I-V surves for two polarities of applied voltage. The current densities observed in the Al2O3 films are much larger than those obtained in SiO2.

• The Magazine of the IEIE
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• v.13 no.1
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• pp.86-95
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• 1986

The basic physical principles involved in the operation of monolithic magnetic sensors are reviewed and technological aspects outlined. More or less conventional devices based on Hall effect, magnetoresistance or current path deflection are described. It is shown that such sensors with 2, 3, 4 or 5 terminal contacts are achievable with standard silicon integrated circuit process. Several kinds of magnetodiodes (p+nn+,p+n, Schottky, MOS, memory, CMOS) have been fabricated on Si and on SOS films and present attractive properties. Finally, the magneto-transistor family is discussed with emphasis to split-terminals, CMOS, unijunction and fila-mentary devices.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.