• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1018-1021
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• 2001

1018-1021 The CuO-P$_2$O$_{5}$ containing P$_2$O$_{5}$ as glass-former were prepared by press-quenching method on the copper plate. By post-heat treatment of these glasses, the CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -g1ass ceramics was obtained and the crystallization behavior and dc conductivities were investigovted. The heat-treated glass-ceramics decreased in electrical conductivity by the order of 10$^1$ compared to amorphous glass. The linear relationship between In($\sigma$T) and T$^{-1}$ indicated that electrical conduction in CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -gass occurred by a small polaron hopping.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.399.1-399.1
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• 2016

p-type 반도체 물질로 알려진 $Cu_2O$에 Li 이온을 doping하면 Cu 이온 자리에 Li이온이 치환되어 p-type의 특성이 더욱 강하게 나타내는 것으로 알려져 있다. 이에 본 연구에서는 RF magnetron sputtering방법으로 성막한 p-type형 $Li:Cu_2O$박막의 특성을 연구하고 이를 $Li:Cu_2O-ZnO$ pn 접합 유연 나노제너레이터에 적용하였다. $Li:Cu_2O$ 성막시 $O_2$ 분압을 변수로 100nm 두께의 $Li:Cu_2O$ 박막을 성막하여 전기적, 광학적, 구조적, 표면 특성을 분석하였다. Hall measurement 측정 결과 $Li:Cu_2O$ 박막은 정공을 Major Carrier로 갖는 p-type 반도체임을 확인하였고, $O_2$의 분압이 증가할수록 Mobility 및 Carrier Concentration이 증가함을 확인하였다. 최적조건에서 광학적 투과도는 약 45%를 보였으며, 투과도를 통해 계산한 band gap은 약 2.03eV로써 일반적인 산화물 반도체의 작은 밴드갭을 가지고 있음을 알 수 있었다. 또한 Ellipsometer분석을 통해 $Ar:O_2$ 비가 $Li:Cu_2O$ 굴절률 및 흡광도에 미치는 영향을 연구하였으며, FE-SEM(Field Emission Scanning Electron Microscope)을 통해 표면을 분석하였다. 또한 XRD(X-ray diffractometer), TEM(Transmission Electron Microscope) 분석을 통하여 상온에서 성막한 $Li:Cu_2O$ 박막의 미세구조를 연구하였다. UPS(Ultraviolet Photoelectron Spectroscopy) 분석을 통해 일함수를 측정하였다. 이렇게 제작된 p 타입 $Li:Cu_2O$ 박막을 이용하여 $Li:Cu_2O-ZnO$ pn 접합을 구현하고 이를 이용해 유연 나노제너레이터를 제작하였다. 다양한 특성 분석을 통해p-type을 이용한 산화물 박막 기반 유연 나노 제너레이터 특성 향상 메커니즘을 제시하였다.

• Journal of the Korean Physical Society
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• v.81
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• pp.867-875
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• 2022

This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuO_x) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu₂O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu₂O, was measured for samples prepared with an OP of 20%. In addition, only Cu⁺ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu²⁺ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu₂O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuO_x thin films could be constantly converted from n-type CuO to p-type Cu₂O by decreasing the oxygen partial pressure. Thin film transistors with Cu₂O deposited at 20% OP revealed p-type characteristics such as onset voltage (V_ON) of -3 V, saturated hole mobility of 8 cm²/Vs at V_GS = -28 V, subthreshold swing of 0.86 V/decade at V_GS-V_ON = -0.5 V, and on/off ratio of 1.14 × 10³.

• Journal of Environmental Science International
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• v.28 no.11
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• pp.971-981
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• 2019

This study evaluated the photocatalytic oxidation efficiency of volatile organic compounds by $Cu_2O-TiO_2$ under visible-light irradiation. $Cu_2O-TiO_2$ was synthesized by an ultrasonic-assisted method. The XRD result indicated successful p-n type photocatalysts. However, no diffraction peaks belonging to $TiO_2$ were observed for the $Cu_2O-TiO_2$. The Uv-vis spectra result revealed that the synthesized $Cu_2O-TiO_2$ can be activated under visible-light irradiation. The FE-TEM/EDS result showed the formation of synthesized nanocomposites in the commercial P25 $TiO_2$, the undoped $TiO_2$, and $Cu_2O-TiO_2$ and componential analysis in the undoped $TiO_2$ and $Cu_2O-TiO_2$. The photocatalytic oxidation efficiencies of benzene, toluene, ethylbenzene, and o-xylene with $Cu_2O-TiO_2$ were higher than those of P25 $TiO_2$ and undoped $TiO_2$. These results indicate that the prepared $Cu_2O-TiO_2$ photocatalyst can be applied effectively to control gaseous BTEX.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.604-607
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• 2010

The glass formation and the dissolution property in $P_2O_5-K_2O$-FeO-CuO system were studied. In the batch process, the content of P2O5 was fixed at 60mol% and the other elements were varied from 10~40mol%. The prepared glasses were soaked in the D.I. water up to 13hr and the dissolution properties were investigated with the solutions sampled every 2 hr. The result shows that the $P_2O_5$ was leached out firstly from Phosphate glass system and then Cu and Fe ions were observed according to atmosphere change in solution. ICP shows that the dissolution amount in Phosphate was depended on the glass structure and the highest dissolution amount of CuO and FeO ions was observed when the 10mol% $K_2O$ was added in batch process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.256-256
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• 2010

투명전극부터 디스플레이 산업에 이르기까지 광범위하게 응용되어지고 있고 개발되어지고 있는 투명전도산화물(TCO)은 ZnO, In2O3, SnO2 등을 기본으로 하는 n-type 재료가 대부분이다. 그러나 투명전도 산화물을 이용한 light emitting diode(LED), 투명한 태양전지, p-형 TFT와 같은 투명전자소자의 개발을 위해서는 p-type 소재가 필수적이다. p-type TCO 소재는 비교적 연구 개발 실적이 매우 부진한 실정이었다. 1997년 넓은 밴드갭을 가지는 ABO2(delafossite) 산화물이 p-type으로서 안정적이라는 것을 보고함에 따라 이에 대한 연구가 활발히 진행되고 있다. 현재 ABO2 형태를 가진 Delafossite구조 산화물이 가장 유망한 p-type 투명전도체 소재로 거론되고 있다. Delafossite 구조가 p-type 투명전도체에 적합한 결정구조인 이유는 밴드갭이 넓고 공유결합에 유리하기 때문이다. Delafossite구조는 상온에서 2종류의 polytype(상온에서 Rhombohedaral구조와 hexagonal 구조)이 존재하며 이들은 각각 3R 및 2H의 결정 구조를 가지고 있다. ABO2의 delafossite구조에서 Cu+의 배열은 c-축을 따라 Cu-O-Cr-O-Cu의 연속적인 층 구조로서 2차원연결로 보여 진다. 보고된 Cu- base delafossite구조를 가지는 재료들은 CuAlO2, CuGaO2, CuInO2 등 여러가지가 있다. 본 연구에서는 PLD를 이용하여 c-plane 사파이어 기판위에 성장된 delafossite구조인 CuCrO2박막의 특성을 알아보았다. p-type 특성을 위하여 CuCrO2에 Zn를 첨가하였으며 그에 따른 구조적 전기적 특성을 조사하였다. 성장온도와 산소분압을 $500{\sim}700^{\circ}C$, 0~10mTorr로 변화시켜 특성을 연구하였다. 성장온도 $700^{\circ}C$, 산소분압 10mTorr에서 c-plane 사파이어 기판위에 c-축 배향의 에피성장된 CuCrO2:Zn 박막을 얻을 수 있었다. Mg를 도핑함에 따른 p-type 특성보다 현저히 떨어지는 것을 확인하였다. 또한 동일한 조건임에도 특정한 이차상의 존재를 통해 도핑된 Zn의 위치를 추측할 수 있었다. 온도와 분압에 따른 결정성과 표면상태를 SEM을 통해서 확인하였다.

• Journal of Magnetics
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• v.17 no.3
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• pp.163-167
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• 2012

The effects on the ferromagnetism of the O or Zn defect in Cu-doped ZnO with the concentration of 2.77-8.33% have been investigated by the first-principles calculations. The Cu doping in ZnO was calculated to be a kind of p-type ferromagnetic half-metals. When the Zn vacancy exists in Cu-doped ZnO, the Cu magnetic moment increases, while for the O vacancy it is reduced. It is noticeable that the ferromagnetic state was originated from the hybridized O(2p)-Cu(3d)-O(2p) chain formed through the p-d coupling. The carrier-mediated ferromagnetism by nitrogen or fluorine does not depend on their concentration.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.315.1-315.1
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• 2014

The use of cellulose papers has recently attracted much attention in various device applications owing to their natural advantageous properties of earth's abundance, bio-friendly, large-scale production, and flexibility. Conventional metal oxides with novel structures of nanorods, nanospindles, nanowires and nanobelts are being developed for emerging electronic and chemical sensing applications. In this work, both ZnO (n-type) nanorod arrays (NRAs) and CuO (p-type) nanospindles (NSs) were synthesized on cellulose papers and the p-n junction property was investigated using the electrode of indium tin oxide coated polyethylene terephthalate film. To synthesize ZnO and CuO nanostructures on cellulose paper, a simple and facile hydrothermal method was utilized. First, the CuO NSs were synthesized on cellulose paper by a simple soaking process, yielding the well adhered CuO NSs on cellulose paper. After that, the ZnO NRAs were grown on CuO NSs/cellulose paper via a facile hydrothermal route. The as-grown ZnO/CuO NSs on cellulose paper exhibited good crystalline and optical properties. The fabricated p-n junction device showed the I-V characteristics with a rectifying behaviour.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.291-294
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• 2000

The crystallization behavior and dc Conductivities of CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ glasses prepared by quenching on the copper plate were investigated. The conductivities of the glasses were range from 10$^{-5}$ s.$cm^{-1}$ / at room temperature, but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^2$order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . The linear relationship between in($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping mechanism.