• 제목/요약/키워드: p and n-type electrical properties

검색결과 198건 처리시간 0.037초

ZnO:As/ZnO:Al homo-junction LED의 제조와 전기적 특성 분석 (Electric properties Analysis and fabrication of ZnO:As/ZnO:Al homo-junction LED)

  • 김경민;소순진;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.55-56
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    • 2007
  • The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Using the ampoule-tube to fabricate the p-type ZnO will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

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Optical Analysis of p-Type ZnO:Al Thin Films

  • Jin, Hu-Jie;So, Byung-Moon;Park, Bok-Kee;Park, Choon-Bae
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.68-69
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    • 2007
  • We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

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p-PEDOT/n-GZO heterojunction의 전기적 특성 (Electrical characteristics of p-PEDOT/n-GZO heterojunction)

  • 이재상;박동훈;구상모;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1332_1333
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    • 2009
  • The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.

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Neutron-irradiated effect on the thermoelectric properties of Bi2Te3-based thermoelectric leg

  • Huanyu Zhao;Kai Liu;Zhiheng Xu;Yunpeng Liu;Xiaobin Tang
    • Nuclear Engineering and Technology
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    • 제55권8호
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    • pp.3080-3087
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    • 2023
  • Thermoelectric (TE) materials working in radioisotope thermoelectric generators are irradiated by neutrons throughout its service; thus, investigating the neutron irradiation stability of TE devices is necessary. Herein, the influence of neutron irradiation with fluences of 4.56 × 1010 and 1 × 1013 n/cm2 by pulsed neutron reactor on the electrical and thermal transport properties of n-type Bi2Te2.7Se0.3 and p-type Bi0.5Sb1.5Te3 thermoelectric alloys prepared by cold-pressing and molding is investigated. After neutron irradiation, the properties of thermoelectric materials fluctuate, which is related to the material type and irradiation fluence. Different from p-type thermoelectric materials, neutron irradiation has a positive effect on n-type Bi2Te2.7Se0.3 materials. This result might be due to the increase of carrier mobility and the optimization of electrical conductivity. Afterward, the effects of p-type and n-type TE devices with different treatments on the output performance of TE devices are further discussed. The positive and negative effects caused by irradiation can cancel each other to a certain extent. For TE devices paired with p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3 thermoelectric legs, the generated power and conversion efficiency are stable after neutron irradiation.

기판의 종류에 따른 SnO2 박막의 전기적인 특성 연구 (Study on the Electrical Characteristics of SnO2 on p-Type and n-Type Si Substrates)

  • 오데레사
    • 반도체디스플레이기술학회지
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    • 제16권2호
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    • pp.9-14
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    • 2017
  • $ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

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Ampoule-tube 법으로 Phosphorus를 도핑한 P형 ZnO 박막의 광학적 특성 분석 (Alanysis of the Optical Properties of p-type ZnO Thin Films Doped by P based on Ampouele-tube Method)

  • 유인성;오상현;소순진;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.145-146
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    • 2006
  • The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on $GaAs_{0.6}P_{0.4}$/GaP and Si wafers. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed and $630^{\circ}C$ during 3hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 $cm^2$/Vs compared with other studies PL spectra measured at 10K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365nm ~ 415nm and 365nm ~ 385nm.

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이온주입 공정을 이용한 4H-SiC p-n Diode에 관한 시뮬레이션 연구 (Simulation Study of ion-implanted 4H-SiC p-n Diodes)

  • 이재상;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회논문지
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    • 제22권2호
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    • pp.128-131
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    • 2009
  • Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

p형 반전층을 갖는 ZnO계 자외선 수광소자의 제작과 전기적.광학적 특성 분석 (Analysis on the Electrical.Optical Properties and Fabrication of ZnO Based UV Photodetector with p-type Inversion Layer)

  • 오상현;김덕규;최대섭;박훈배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.367-368
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    • 2007
  • To investigate the 2nO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by RF sputtering system. Gas ratios and work pressure is Ar : $O_2$ = 4 : 1 and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at 300, 450, and $650^{\circ}C$. The current-voltage, responsivity and quantum efficiency of devices were studied and compared with each devices.

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Electrical Properties of (Ba,Ca)(Ti,Zr)O3 Ceramics for Bimorph-type Piezoelectric Actuator

  • Shin, Sang-Hoon;Yoo, Ju-Hyun
    • Transactions on Electrical and Electronic Materials
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    • 제15권4호
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    • pp.226-229
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    • 2014
  • In this study, lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics and a bimorph-type piezoelectric actuator were fabricated using the normal oxide-mixed sintering method, and their dielectric properties, microstructure, and displacement properties were investigated. From the results of X-ray diffraction, the pattern of the specimen has a pure perovskite structure. In addition, no secondary impurity phases were found. The excellent piezoelectric coefficient of $d_{33}=454pC/N$, the electromechanical coupling factor $k_p=0.51$, the dielectric constant ${\varepsilon}_r=3,657$, the mechanical quality factor $Q_m=239$, and $T_c$(Tetragonal-Cubic) =$90^{\circ}C$ were shown at x= 0.085. ${\Delta}k_p/k_p20^{\circ}C$ and ${\Delta}f_r/f_r20^{\circ}C$ showed the maximum value of -0.255 and 0.111 at $-20^{\circ}C$ and $80^{\circ}C$, respectively. The maximum total-displacement was $60{\mu}m$ under the input voltage of 50 V. As a result, it is considered that lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics is a promising candidate for piezoelectric actuator application for x= 0.085.

p-type GaN의 Activation을 통한 광전기화학적 특성 향상 (Improvement of Photoelectrochemical Properties through Activation Process of p-type GaN)

  • 방승완;김하성;배효정;주진우;강성주;하준석
    • 마이크로전자및패키징학회지
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    • 제24권4호
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    • pp.59-63
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    • 2017
  • n-type GaN 반도체는 광전극으로서 우수한 성질을 가지고 있지만, 표면에서 일어나는 산소반응으로 인한 광부식으로 신뢰성이 저하되는 큰 단점이 있다. 이를 근본적으로 억제하기 위하여 표면에서 수소 발생 반응이 일어나는 p-type GaN를 광전극으로 사용함으로써 광부식을 피하고자 하는 연구가 진행되고 있다. 하지만 p-type GaN은 비저항이 높고 정공 이동도가 낮기 때문에 효율이 낮다는 단점을 가지고 있다. 본 연구에서는 이러한 문제를 p-type GaN의 activation 공정을 통해 개선하고자 한다. 전극으로 사용될 p-type GaN을 $N_2$ 분위기의 $500^{\circ}C$에서 1 분 동안 annealing을 하였다. Hall effect 측정을 통하여 전기적 특성을 확인하였으며, potentiostat (PARSTAT4000) 측정을 통하여 광전기화학적 (photoelectrochemical, PEC) 특성을 분석하였다. 그 결과 annealing 공정을 통하여 광전류밀도가 1.5배 이상 향상되었으며, 3시간 동안 안정적인 광전류 값을 확인하였다.