• 제목/요약/키워드: p a-SiC:H

검색결과 616건 처리시간 0.034초

Potential Antitumor ${\alpha}$-methylene-${\gamma}$-butyrolactone-bearing nucleic acid bases. 2. synthesis of $5^I-Methyl-5^I$-[2-(5-substituted uracil-1-yl)ethyl]-$2^I-oxo-3^I$-methylenetetrahydrofurans

  • Kim, Jack-C.;Kim, Ji-A;Park, Jin-Il;Kim, Si-Hwan;Kim, Seon-Hee;Choi, Soon-Kyu;Park, Won-Woo
    • Archives of Pharmacal Research
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    • 제20권3호
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    • pp.253-258
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    • 1997
  • Ten, heretofore unreported, $ 5^I-methyl-5^I-[2-(5-substituted uracil-1-yl)ethyl)]-2^I-oxo-3^I$-methylenetetrahydrofurans (H, F, Cl, Br, I, $ CH_3$,$CF_3$,$CH_2CH_3$,$ CH=CH2$, SePh) (7a-j) were synthesized and evaluated against four cell lines (K-562, FM-3A, P-388 and U-937). For the preparation of ${\alpha}$-methylene-${\gamma}$-butyrolactone-linked to 5-substituted uracils (7a-j), the convenient Reformasky type reaction was employed which involves the treatment of ethyl ${\alpha}$-(bromomethyl)acrylate and zinc with the respective 1-(5-substituted uracil-1-yl)-3-butanone (6a-j). The 5-substituted uracil ketones (6a-j) were directly obtained by the respective Michael type reaction of vinyl methyl ketone with the $K_2CO_3$(or NaH)-treated 5-substituted uracils (5a-j) in the presence of acetic acid in the DMF solvent. The .alpha.-methylene-.gamma.-butyrolactone compounds showing the most significant antitumor activity are 7e, 7f, 7h and 7j (inhibitory concentration $(IC_50)$ ranging from 0.69 to $2.9 {\mu}g/ml$), while 7b, 7g and 7i have shown moderate to significant activity. The compounds 7a, 7c and 7d were found to be inactive. The synthetic intermediate compounds 6a-j were also screened and found marginal to moderate activity where compounds 6b and 6g showed significant activity $(IC_50:0.4~2.8 {\mu}g/ml)$.

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Mn-Ir-Pt 새로운 반강자성체를 사용한 스핀밸브 거대자기저항에 관한 연구 (Study on the Spin Valve Giant Magnetoresistance With a New Mn-Ir-Pt Antife rromagnetic Material)

  • 서수정;윤성용;김장현;전동민;김윤식;이두현
    • 한국자기학회지
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    • 제11권4호
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    • pp.141-145
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    • 2001
  • Mn-Ir-Pt/Ni-Fe 교환이방성 이층박막은 계면에서 높은 교환결합자계(exchange bias field; $H_{ex}$)를 가질 뿐만 아니라 뛰어난 열적안정성과 Mn-Ir에 비하여 좋은 내식성을 나타내므로 스핀밸브형 다층막 소자의 고정층의 재료로 적합하다고 생각되어진다. 열적안정성에 관한 평가인 blocking 온도( $T_{b}$)는 Mn-Ir이 240 $^{\circ}C$로 Mn-Ir-Pt가 250 $^{\circ}C$로 Mn-Ir에 비하여 Mn-Ir-Pt의 $T_{b}$가 높은 것으로 평가되었으며, 내식성에 관한 평가인 부식전류밀도는 Mn-Ir-Pt 10배 정도의 낮은 값을 가지므로 내식성 또한 Mn-Ir에 비해 우수한 것으로 평가된다. Mn-Ir에 Pt를 약 1.9 at%정도 첨가하였을 때 $H_{ex}$가 가장 큰 값을 나타내었다. 본 연구에서 Ni-Fe/M $n_{78.3}$I $r_{19.8}$P $t_{1.9}$의 고정층을 사용한 스핀밸브 다층막의 자기적, 구조적 특성을 연구한 결과 약 5 %의 자기저항비를 얻을 수 있었다.다.다.다.다.다.다.

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PREPARATION AND CHARACTERIZATION OF MULTIFERROIC 0.8 $BiFeO_3$-0.2 $BaTiO_3$ THIN FIMLS BY PULSED LASER DEPOSITION

  • ;;;이희영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.313-313
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    • 2010
  • $BiFeO_3$ (BFO), when forming a solid solution with $BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$/Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

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Purification and Characterization of a Methanol Dehydrogenase Derived from Methylomicrobium sp. HG-1 Cultivated Using a Compulsory Circulation Diffusion System

  • Kim, Hee-Gon;Kim, Si-Wouk
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제11권2호
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    • pp.134-139
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    • 2006
  • Methanotrophs are microorganisms that possess the unique ability to utilize methane as their sole source of carbon and energy. A novel culture system, known as the compulsory circulation diffusion system, was developed for rapid growth of methanotrophic bacteria. Methanol dehydrogenase (MDH, EC 1.1.99.8) from Methylomicrobium sp. HG-1, which belongs to the type I group of methanotrophic bacteria, can catalyze the oxidation of methanol directly into formaldehyde. This enzyme was purified 8-fold to electrophoretic homogeneity by means of a 4 step procedure and was found in the soluble fraction. The relative molecular weight of the native enzyme was estimated by gel filtration to be 120 kDa. The enzyme consisted of two identical dimers which, in turn, consisted of large and small subunits in an ${\alpha}_2{\beta}_2$ conformation. The isoelectric point was 5.4. The enzymatic activity of purified MDH was optimum at pH 9.0 and $60^{\circ}C$, and remained stable at that temperature for 20 min. MDH was able to oxidize primary alcohols from methanol to octanol and formaldehyde.

The noble method for superhydrophobic thin film coating

  • 서현욱;김광대;정명근;김동운;김명주;닐라이 쿠마르 데;김영독;임동찬;이규환;엄성현;이재영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.496-496
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    • 2011
  • A very simple and cost-effective method for fabrication of SiOx-incorporated diamond-like carbon (DLC) thin films at a preparation temperature of less than $200^{\circ}C$ was developed. Since DLC coating can be prepared not under vacuum but atmospheric conditions without any carrier gas flow, not only wafers but also powderic substrates can be used for DLC coating. Formation of DLC coating could result in appearance of superhydrophobic behaviors, which was sustained in a wide range of pH (1~14). DLC-coated surfaces selectively interacted with toluene in a toluene/water mixture. These results imply that our preparation method of the DLC coating can be useful in many application fields such as creating self-cleaning surfaces, and water and air purification filters.

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B2O3첨가에 따른 V2O5-P2O5-ZnO계 유리의 물성 및 구조와 봉착특성 (Effect of B2O3 Addition on Thermal, Structure, and Sealing Properties V2O5-P2O5-ZnO Glass)

  • 성아람;김유리안;김형순
    • 한국재료학회지
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    • 제26권10호
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    • pp.549-555
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    • 2016
  • We have investigated a glass-forming region of $V_2O_5-P_2O_5-ZnO$ glass and the effects of the addition of modifier oxides ($B_2O_3$) to the glass systems as a sealing material to improve the adhesion between the glass frits and a soda lime substrate. Thermal properties and coefficient of thermal expansion were measured using a differential scanning calorimetry, a dilatometer and a hot stage microscopy. Structural changes and interfacial reactions between the glass substrate and the glass frit after sintering (at $400^{\circ}C$ for 1 h) were measured by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscope. The results showed that the adhesion strength increases as the content of $B_2O_3$ at 5 mol% increases because of changes in the structural properties. It seems that the glass structures change with $B_2O_3$, and the $Si^{4+}$ ions from the substrate are diffused to the sealing glass. From these results, we could understand the mechanism of strengthening of the adhesion of soda lime silica substrate by ion-diffusion from the substrate to the glass.

Sol-gel deposited TiInO thin-films transistor with Ti effect

  • Kim, Jung-Hye;Son, Dae-Ho;Kim, Dae-Hwan;Kang, Jin-Kyu;Ha, Ki-Ryong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.200-200
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    • 2010
  • In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

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돼지 mitochondrial calcium uptake 1 (MICU1) 유전자의 3'UTR 내 SNP가 육질에 미치는 영향 (Effects of Polymorphisms in the 3' Untranslated Region of the Porcine Mitochondrial calcium uptake 1 (MICU1) Gene on Meat Quality Traits)

  • 지예솔;조은석;전현정;이시우;임규상;김태헌;이경태
    • 생명과학회지
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    • 제26권11호
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    • pp.1232-1236
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    • 2016
  • Mitochondrial calcium uptake 1 (MICU1)은 2개의 canonical EF hands를 가지고 미토콘드리아 내막에 위치하여, 미토콘드리아의 칼슘 섭취에 중요한 기능을 하는 것으로 알려져 있다. 근육 세포의 미토콘드리아 칼슘 섭취는 사후에 급속냉각 또는 냉장 시, 근육 내 칼슘 방출로 인한 강직과 관련되어 있으므로 궁극적으로는 육질 형성에 관련이 있을 것으로 판단된다. 따라서 본 연구에서는 돼지 MICU1 유전자의 exon영역의 변이를 탐색하고, 발굴된 변이에 대해 육질 형질과의 연관성 분석을 실시하였다. 이를 위해 버크셔 667두(암퇘지 347두, 거세수퇘지 320두)가 이용되었으며, MICU1 유전자의 cDNA를 염기서열 해독하여 비교함으로써 exon 영역의 변이를 발굴하였다. 그 결과 MICU1의 3' 비해독 영역(untranslated region, UTR)에서 3개의 단일염기다형성(single-nucleotide polymorphism, SNP)를 발견했다. 그리고 이들 SNP에 대해 공시돈의 육질형질(근육 pH, 육즙 손실, 육색, 근내지방함량)과 연관성 분석을 실시했다. SNP1 (c.*136G>A)에서는 육즙 손실(p=0.017), 근내지방함량(p=0.039)과 연관되어 있었고, SNP2 (c.*222G>A)와 SNP3 (c.*485G>A)에서는 각각 육즙 손실(p=0.018)과 근내지방함량(p<0.001)과 연관되어 있는 것을 확인하였다. 따라서 본 결과를 바탕으로, 돼지에서 육질과 관련된 후보 유전자로 추정된 MICU1 유전자로부터 3' 비해독 영역의 변이가 유의적으로 육질 형질과 관련되어있다는 것이 확인되었다. 향후 MICU1 유전자의 3' 비해독 영역의 변이들에 기능적 역할을 정확히 파악하기 위한 분자생물학적 특성 연구가 필요할 것으로 판단된다.

백제보와 죽산보에서 남조류 우점 환경요인 분석 (Analysis of Environmental Factors Associated with Cyanobacteria Dominance in Baekje Weir and Juksan Weir)

  • 김성진;정세웅;박형석;조영철;이희숙;박연정
    • 한국물환경학회지
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    • 제35권3호
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    • pp.257-270
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    • 2019
  • Followingthe Four Rivers Project, cyanobacterial blooms have been frequently observed in the upstream of the installed weirs. The aim of this study was to characterize the major environmental factors that are associated with the cyanobacteria dominance in Baekje Weir (Geum River) and Juksan Weir (Youngsan River) based on intensive experiments and systematic data mining methods. The factors related to the cyanobacteria dominance include7-days cumulative rainfall (APRCP7), 7-days averaged flow (Q7day), water temperature (Temp), stratification strength (${\Delta}T$), electronic conductivity (EC), DO, pH, $NO_3-N$, $NH_3-N$, TN, TP, $PO_4-P$, Chl-a, Fe, BOD, COD, TOC, and $SiO_2$. The most highly correlatedfactors to the dominant cyanobacteria were found to be EC, Temp, Q7day, $PO_4-P$ in theBaekje Weir. On the other hand, those dominant in the Juksan Weir were ${\Delta}T$, TOC, Temp, EC and TN. The EC showed a strong correlation with cyanobacteria dominance in both weirs because a high EC represents a persisted low flow condition. The cyanobacteria dominance was as high as 56 % when the EC was equal or greater than $418{\mu}S/cm$ in Baekje Weir. It was as high as 63% when the ${\Delta}T{\geq}2.1^{\circ}C$ in the Juksan Weir. However, nutrients showed a minor correlation with cyanobacteria dominance in both weirs. The results suggest that the cyanobacteria dominate in astate where the water flow rate is low, water temperature is high and thermal stratification is strengthened. Therefore, the improvement of flow regimes is the most important to prevent persistent thermal stratification and formation of cyanobacteria bloom in theBaekje and JuksanWeirs.

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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