• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.604-607
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• 2008

In this study, p-channel silicon-oxide-nitride-oxide-silicon (SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are $20{\AA}$ for the tunnel oxide, $14{\AA}$ for the nitride layer, and $49{\AA}$ for the blocking oxide. The fabricated SONGS transistors show low programming voltage, fast erase speed, and relatively good retention and endurance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.7-11
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• 2009

In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.