• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.920-923
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• 2000

All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.159-162
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• 1999

All solid state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of Li/LiPON/V$_2$O$\sub$5/Pt. The vanadium oxide thin films were formed by d.c. reactive sputtering on Pt current collector. After deposition of vanadium oxide films, in-situ growths of lithium phosphorus oxynitride film were conducted by r.f. sputtering of Li$_3$PO$_4$ target in mixture gas of N$_2$ and O$_2$. The pure metal lithium film was deposited by thermal evaporation on thin film LiPON electrolyte. The cell capacity was about 45${\mu}$Ah/$\textrm{cm}^2$ $\mu\textrm{m}$ after 200 cycle. No appreciable degradation of the cell capacity could be observed after 50 cycles .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.176-176
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• 2010

OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 각각의 박막의 Crack의 특성을 85%-$85^{\circ}C$조건에서 24hr 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.90-93
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• 1992

In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.4
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• pp.97-101
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• 2000

In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at ($N_2$+O$_2$) atmosphere was lower than those sputtered at (Ar +O$_2$) atmosphere: 1.9$\times$10$^{-8}$ A/cm$^2$ at 2V for the films prepared at (Ar +O$_2$) atmosphere and 8.6$\times$10$^{-9}$ A/cm$^2$ for the films at ($N_2$+O$_2$) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at ($N_2$+O$_2$) atmosphere have superior electrical properties to the films sputtered at (Ar +O$_2$), without any significant structural changes.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.93-100
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• 2000

Effects of Ti content and Ti underlayer on the pitting behavior of TiN coated AISI 304 stainless steel have been studied. The stainless steel containing 0.1~1.0wt% Ti were melted with a vacuum melting furnace and heat treated at $1050^{\circ}C$ for 1hr for solutionization. The specimen were coated with l$\mu\textrm{m}$ and 2$\mu\textrm{m}$ thickness of Ti and TiN by E-beam PVD method. The microstructure and phase analysis were conducted by using XRD, XPS and SEM with these specimen. XRD patterns shows that in TiN single-layer only the TiN (111) Peak is major and the other peaks are very weak, but in Ti/TiN double-layer TiN (220) and TiN (200) peaks are developed. It is observed that the surface of coating is covered with titanium oxide (TiO$_2$) and titanium oxynitride ($TiO_2$N) as well as TiN. Corrosion potential on the anodic polarization curve measured in HCl solution increase in proportion to the Ti content of substrate and by a presence of the Ti underlayer, whereas corrosion and passivation current densities are not affected by either of them. The number and size of pits decrease with increasing Ti content and a presence of the coated Ti film as underlayer in the TiN coated stainless steel.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.255-261
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• 1997

Thin film batteries can be used as a micro power source for electronic in which minute power is needed. In this study, lithium phosphorous oxynitride(LIPON) thin films were deposited as an eletrolyte for lithium ion batteries using RF magentron sputtering of lithium phosphate in N2. Ti was also added into the LIPON films as a second network former to enhance the ioinc conductivity of the films. The optimum conditions for LIPON film deposition were sought and the electrolyte with the conductivity of $2.5 \times 10^{-6}$S/cm was obtained at the condition of RF power 4.4 W/$\textrm{cm}^2$, process pressure 10 mtorr and pure nitrogen ambience. Furthermore, the conductivity of LIPON films was increased from $2.5 \times 10^{-6}$S/cm to $8.6 \times 10^{-6}$S/cm by the doping of 2.4at.% Ti. It was also found that by adding Ti to LIPON films, Li content was increased and nitrogen content that reported having the cross-linking effect on LIPON films was also increased as confirmed XPS.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.97-102
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• 2005

NO adsorption can be used in synthesizing oxynitride thin films which have potential application in nanodevices. However, it is very difficult to understand the oxynitridation Process since too many factors are involved in it. In this paper, we present our first-principles molecular dynamics calculation of the NO molecule adsorption on the Si(001) surface as the initial stage of the oxynitridation process. The previous first-principles calculation has argued the NO molecule is dissociated with a very small activation barrier, 0.07eV, which acutally corresponds to 1.60eV considering thermodynamics. This is in clear contrast to the observation that NO is dissociated at temperatures as low as 20K From extensive searches of NO on the Si(001) surface, we have found the new dissociation processes that have the much lower activation energies, less than 0.01 eV. We also present the dissociation and penetration processes with the corresponding activation energies and discuss their experimental implications.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.