• Title/Summary/Keyword: oxygen doping

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Physical Characterization of GaAs/$\textrm{Al}_{x}\textrm{Ga}_{1-x}\textrm{As}$/GaAs Heterostructures by Deep Level transient Spectroscopy (DLTS 방법에 의한 GaAs/$\textrm{Al}_{x}\textrm{Ga}_{1-x}\textrm{As}$/GaAs 이종구조의 물성분석에 관한 연구)

  • Lee, Won-Seop;Choe, Gwang-Su
    • Korean Journal of Materials Research
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    • v.9 no.5
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    • pp.460-466
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    • 1999
  • The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

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Effects of Mn- and K-addition on Catalytic Activity of Calcium Oxide for Methane Activation (메탄 활성화반응에서 산화칼슘 촉매의 활성에 대한 망간과 칼륨의 첨가효과)

  • Park, Jong Sik;Kong, Jang Il;Jun, Jong Ho;Lee, Sung Han
    • Journal of the Korean Chemical Society
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    • v.42 no.6
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    • pp.618-628
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    • 1998
  • Pure CaO, Mn-doped CaO, Mn/CaO, and K/CaO catalysts were prepared and tested as catalysts for the oxidative coupling of methane in the temperature range of 600 to 800$^{\circ}C$ to investigate the effects of Mn- and K-addition on the catalytic activity of calcium oxide. To characterize the catalysts, X-ray powder diffraction(XRD), XPS, SEM, DSC, and TG analyses were performed. The catalytic reaction was carried out in a single-pass flow reactor using on-line gas chromatography system. Normalized reaction conditions were generally $p(CH_4)/p(O_2)=250$ Torr/50 Torr, total feed flow rate=30 mL/min, and 1 atm of total pressure with He being used as diluent gas. Among the catalysts tested, 6.3 mol% Mn-doped CaO catalyst showed the best $C_2$ yield of 8.0% with a selectivity of 43.2% at 775$^{\circ}C$. The $C_2$ selectivity increased on lightly doped CaO catalysts, while decreased on heavily doped CaO([Mn] > 6.3 mol%) catalysts. 6 wt.% Mn/CaO and 6 wt.% K/CaO catalysts showed the $C_2$ selectivities of 13.2% and 30.9%, respectively, for the reaction. Electrical conductivities of CaO and Mn-doped CaO were measured in the temperature range of 500 to 1000$^{\circ}C$ at Po2's of $10^{-3}\; to\;10^{-1}\;atm.$ The electrical conductivity was decreased with Mn-doping and increased with increasing $P0_2$in the range of $10^{-3}\;to\;10^{-1}\;atm,$ indicating the specimens to be p-type semiconductors. It was suggested that the interstitial oxygen ions formed near the surface can activate methane and the formation of interstitial oxygen ions was discussed on the basis of solid-state chemistry.

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The biofilm removal effect of MnO2-diatom microbubbler from the dental prosthetic surfaces: In vitro study (치과 보철 재료 표면에서 MnO2-diatom microbubbler의 세균막 제거 효과 연구: In vitro study)

  • Lee, Eun-Hyuk;Seo, Yongbeom;Kwon, Ho-Bum;Yim, Young-Jun;Kong, Hyunjoon;Kim, Myung-Joo
    • The Journal of Korean Academy of Prosthodontics
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    • v.58 no.1
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    • pp.14-22
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    • 2020
  • Purpose: The aim of this study is to evaluate the effectiveness of MnO2-diatom microbubbler (DM) on the surface of prosthetic materials as a mouthwash by comparing the biofilm removal effect with those previously used as a mouthwash in dental clinic. Materials and methods: DM was fabricated by doping manganese dioxide nanosheets to the diatom cylinder surface. Scanning electron microscopy (SEM) was used to observe the morphology of DM and to analyze the composition of doped MnO2. Stereomicroscope was used to observe the reaction of DM in 3% hydrogen peroxide. Non-precious metal alloys, zirconia and resin specimens were prepared to evaluate the effect of biofilm removal on the surface of prosthetic materials. And then Streptococcus mutans and Porphyromonas gingivalis biofilms were formed on the specimens. When 3% hydrogen peroxide solution and DM were treated on the biofilms, the decontamination effect was compared with chlorhexidine gluconate and 3% hydrogen peroxide solution by crystal violet staining. Results: Manganese dioxide was found on the surface of the diatom cylinder, and it was found to produce bubble of oxygen gas when added to 3% hydrogen peroxide. For all materials used in the experiments, biofilms of the DM-treated groups got effectively removed compared to the groups used with chlorhexidine gluconate or 3% hydrogen peroxide alone. Conclusion: MnO2-diatom microbubbler can remove bacterial membranes on the surface of prosthetic materials more effectively than conventional mouthwashes.

Electrochemical properties of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3$ cathodes for medium-temperature SOFC (중간온도형 고체산화물 연료전지의 양극재료로서 $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3$의 전기화학특성)

  • Ryu Ji-H.;Jang Jong-H.;Lee Hee-Y.;Oh Seung-M.
    • Journal of the Korean Electrochemical Society
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    • v.1 no.1
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    • pp.1-7
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    • 1998
  • For the purpose of finding new cathode materials for medium-temperature $(700\~800^{\circ}C)$ solid oxide fuel cells, $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$ are prepared, and their thermal stability and conductivity characteristics are investigated. Also, the cathodic activities are measured after the cathode layer being attached on CGO (cerium-gadolinium oxide) electrolyte disk. The X-ray analyses indicate that the materials prepared by calcining the citrate-gels at $800^{\circ}C$ have the orthorhombic perovskite structure without discernible impurities. The thermal stability of the undoped Co perovskite is so poor that it is decomposed to the individual binary oxide even at $1300^{\circ}C$. But the partially Fe-doped cobaltates exhibit a better thermal stability to retain their structural integrity up to $1400^{\circ}C$. The observation whereby both the undoped and Fe-doped cobaltates melt at ca. $1300^{\circ}C$ leads us to perform the electrode adhesion at <$1300^{\circ}C$. The cathodic activity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$, electrodes is superior to $La_{0.9}Sr_{0.1}MnO_3$, among the samples of $x=0.0\~0.5$, the x=0.2 cathode shows the best activity for the oxygen reduction reaction. It is likely that the Fe-doping provides a better thermal stability to the materials but in turn imparts an inferior cathodic activity, such that the optimum trade-off is made at x=0.2 between the two factors. The total electrical conductivity and ion conductivity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3$, are measured to be 51 S/cm and $6.0\times10^{-4}S/cm\;at\;800^{\circ}C$, respectively. The conductivity values illustrate that the materials are a mixed conductor and the reaction sites can be expanded to the overall electrode surface, thereby providing a better cathodic activity than $La_{0.9}Sr_{0.1}MnO_3$.