• Korean Journal of Materials Research
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• v.17 no.9
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• pp.453-457
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• 2007

Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.191-195
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• 2000

With the object of developing a non-gap choke core, effects of annealing in oxygen atmosphere on magnetic properties for Fe$_{78}$Si$_{9}$B$_{13}$ amorphous alloy were investigated. After annealing for 2 hrs at 440 $^{\circ}C$, optimum magnetic properties for choke core were obtained, where the effective permeability was 180 and was almost constant up to several MHz, and the decrease in permeability upon large DC bias current of 12 A or DC bias magnetic field of 8,000 A/m was very little. Moreover the AC magnetic loss was very low as compared to the conventional choke cores. Upon the optimum annealing, the magnetic hysteresis loop was inclined accompanying the increase of coercive force and the appearance of fine crystallites of $\alpha$-Fe phase. The good choke core properties was considered to be due to the suppression of domain boundary motion and domain refinement by the crystallites.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.309-313
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• 2021

Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiO_x thin film through a solution process. The electrical characteristics of the NiO_x thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiO_x thin films. The optimized NiO_x exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiO_x could be a potential solution which can provide robustness to conventional organic semiconductors.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of Electrochemical Science and Technology
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• v.15 no.1
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• pp.96-110
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• 2024

Polymer electrolyte membrane fuel cells (PEMFCs) are green energy conversion devices, for which commercial markets have been established, owing to their application in fuel cell vehicles (FCVs). Development of cathode electrocatalysts, replacing commercial Pt/C, plays a crucial role in factors such as cost reduction, high performance, and durability in FCVs. PtNi octahedral catalysts are promising for oxygen reduction reactions owing to their significantly higher mass activity (10-15 times) than that of Pt/C; however, their application in membrane electrode assemblies (MEAs) is challenged by their low stability. To overcome this durability issue, various approaches, such as third-metal doping, composition control, halide treatment, formation of a Pt layer, annealing treatment, and size control, have been explored and have shown promising improvements in stability in rotating disk electrode (RDE) testing. In this review, we aimed to compare the features of each strategy in terms of enhancing stability by introducing a stability improvement factor for a direct and reasonable comparison. The limitations of each strategy for enhancing stability of PtNi octahedral are also described. This review can serve as a valuable guide for the development of strategies to enhance the durability of octahedral PtNi.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.94.2-94.2
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• 2010

Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%～89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

• Progress in Superconductivity and Cryogenics
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• v.23 no.1
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• pp.12-16
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• 2021

The magnetic properties of heat treated O-series high temperature superconducting (HTS) GdBCO coated conductor (CC) tapes which were formed of Ag/GdBCO/Buffer-layers/Stainless Steel (SS), were investigated by employing a Quantum Design PPMS-14. Using a modified Bean model, the critical current density J_c values have been estimated from the 𝚫m_irr(H) data, which are obtained by measuring the magnetic moment m(H) loops. For a range of intermediate fields, which are interacting or collective flux pinning area, the magnetic flux behaviors were investigated from the relationship J_c ∝ H^-β. In addition, the changes of irreversibility magnetic field H_irr line of heat-treated O-series HTS GdBCO CC tapes were analyzed, according as the annealing temperature under oxygen flowing increases. Both weak and strong break-downs were found by examining the changes of irreversibility magnetic field H_irr lines.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.234-240
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• 2001

The diffusion barrier properties of TiN by using Cu(Mg) alloy film have been investigated. Cu(Mg) alloy film was deposited on air-exposed TiN film. Upon annealing, interfacial MgO of 100 $\AA$ has been formed due to the reaction of Mg with oxygen existed on the surface of TiN. Combined MgO/TiN structure prevented the interdiffusion of Cu and Si up to $800^{\circ}C$. To improve the adhesion of Cu(Mg) alloy film to the TiN, TiN layer was treated by $O_2$ plasma, followed by vacuum annealing at $300^{\circ}C$. It was found that increased oxygen on the surface of TiN film by plasma treatment enhanced segregation of Mg toward the interface, resulting in the formation of dense MgO layer. Improved adhesion characteristics have been formed through this treatment. However, increased power of $O_2$ plasma led to the formation of TiO$_2$ and decreased the Mg content to be segregated to the interface, resulting in the decrease in adhesion property. In addition, the deposition of 50 ${\AA}$ Si on the TiN enhanced the adhesion of Cu(Mg) alloy to TiN without deteriorating the TiN diffusion barrier characteristics.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.300-304
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• 1999

To tap the feasibility of exploiting the 2$^{nd}$ phases as flux-pinning centers in the (Bi,Pb)$_2Sr_2Ca_2CuO_{10}$ superconductor, the size and the distribution of the precipitates have been controlled by changing reaction temperature and time, oxygen partial pressure Po$_2$ and annealing condition. Various annealing heat treatments were also conducted on the as-received 61 filament Bi-2223 tapes with Bi$_{1.8}Pb_{0.4}Sr_2Ca_{2.2}Cu_3O_8$ starting composition and annealed specimen were analyzed with XRD, SEM, EDS and TEM.. The grain size of (Ca,Sr)$_2$(BiPb)O$_4$ or Bi$_{0.5}Pb_3Sr_2Ca_2CuO_{\delta}$ was controllable by optimizing the heat treatment condition and critical current density (J$_c$) showed dependence on the size of the 2$^{nd}$ phases.