• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.70-70
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• 2001

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.2
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• pp.90-95
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• 2006

Nitriding or carburizing of carbon steels results in good mechanical properties such as high surface hardness and wear resistance but it has no affection on the corrosion resistance. Corrosion properties of nitriding and carburizing steels could be deteriorated. So, recently, there have been great demand for oxi-nitriding to enhance both mechanical properties and corrosion resistance. In this study, the corrosion resistance of carbon steel, S35C, and free cutting steel, SUM222, are prepared by vacuum nitriding and vacuum post-oxidation were compared with those treated by nitriding. After vacuum post-oxidation, $5{\mu}m$ oxide layer was formed on the nitride layer with $20{\sim}30{\mu}m$ depth. Potentio-dynamic polarization curve in corrosion test showed that the corrosion potential after post oxidation was increased from 200 mV to 800 mV in S35C and from 600 mV to 1200 mV in SUM222. SEM analyses showed that pores was increased and surface roughness became rougher with post oxidation. However, the formation of $Fe_3O_4$ resulted in the enhanced corrosion resistance of steels.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Resources Recycling
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• v.12 no.5
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• pp.29-35
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• 2003

$\beta$-Sialon is synthesized by carbo-thermal reduction and nitriding (CTRN) method, using the Fly ash from power plant. $\beta$-Siaion is synthesized at $1,450^{\circ}C$ for 10 hours, and sintered at $1,550 ^{\circ}C$ for 3 hours in nitrogen atmosphere. The XRD analytical results show that the sintered $\beta$-Sialon contains $SiO_2$ and $FeSi_{x}$ of inter-metallic compound. The sintered $\beta$-Sialon is stable against the oxidation at the temperature of 1,31$0^{\circ}C$ for 20 hours. The weight of the sample increases rapidly by oxidation reaction at $1,360^{\circ}C$. The oxide scale is consisted with mullite phase when it is oxidized at the temperature of $1,360 ^{\circ}C$ for 10 hours.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.