• 제목/요약/키워드: oxide thickness measurement

검색결과 101건 처리시간 0.036초

PMOS에 적합한 Mo 전극의 전기적 화학적 안정성 (Electrical and Chemical Stability of Mo Gate Electrode for PMOS)

  • 노영진;이충근;홍신남
    • 대한전자공학회논문지SD
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    • 제41권4호
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    • pp.23-28
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    • 2004
  • 본 논문에서는 Mo을 PMOS의 금속 게이트로 사용하였을 때의 Mo의 특성에 대해서 연구 하였다. Mo을 게이트 물질로 사용한 MOS 커패시터를 제작하였고, 소자의 C-V 특성 곡선으로부터 일함수를 추출하였다. 그 결과 Mo 게이트는 PMOS에 적합한 일함수를 나타내는 것을 알 수 있었다. Mo의 전기적/화학적 안정성을 검증하기 위해서 600, 700, 800 그리고 900℃에서 급속 열처리를 수행하였으며 열처리 이후 유효 산화막의 두께와 일함수의 변화를 살펴보았다. 또한 900℃ 열처리 이후의 XRD 분석을 통해서 Mo 금속 게이트가 SiO₂에 대해서 안정하다는 것을 확인하였다. 4점 탐침기로 측정한 Mo 금속 게이트의 면저항은 10Ω/□ 미만으로 폴리 실리콘에 비해서 매우 작은 값을 나타냈다.

The Characteristics of Plasma Polymerized Carbon Hardmask Film Prepared by Plasma Deposition Systems with the Variation of Temperature

  • Yang, J.;Ban, W.;Kim, S.;Kim, J.;Park, K.;Hur, G.;Jung, D.;Lee, J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.381.1-381.1
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    • 2014
  • In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

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Thermal Stability of Self-formed Barrier Stability Using Cu-V Thin Films

  • 한동석;문대용;김웅선;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.188-188
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    • 2011
  • Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

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Bioglass에서 CaO 대신 MgO의 치환첨가에 따른 유리구조, 물성 및 Hydroxyapatite형성 (Effect of Substitution of MgO for CaO on the Bioglass Structure, Properties and Hydroxyapatite Formation)

  • 이호필;김철영
    • 한국세라믹학회지
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    • 제27권8호
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    • pp.979-990
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    • 1990
  • The possible use of bioglass as implant materials is due to its biocompatibility to human body. Even if many animal studies for the bioglasses have been performed, their structures and physical properties are not fully understood. In the present work, several investigations such as Raman spectroscopic analysis, density, thermal expansion coefficient, softening temperature, and refractive index measurement were carried out to find the structures and physical properties of bioglasses, where MgO is substituted for CaO in bioglass composition (46.1%SiO2, 24.4%Na2O, 26.9%CaO, 2.6%P2O5 ; mole%). Hydroxyapatite formation on the glass surface reacted in Tris-buffer solution was also examined. When CaO was replaced by MgO, nonbridging oxygen in glass structuer was diminished but the degree of disorder increased. Thermal expansion and softening properties showed the mixed oxide effect. Hydroxyapatite were formed on the surface of 0~11mole% of MgO containing bioglasses, and the thickness of SiO2-rich layer as well as hydroxyapatite layer were unchanged with MgO content. However, the hydroxyapatite was not formed on the surface of the bioglasses containing over 11 mole percent MgO, even if the glasses were reacted for long period.

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Preparation and characterization of TiO2 membrane on porous 316 L stainless steel substrate with high mechanical strength

  • Mohamadi, Fatemeh;Parvin, Nader
    • Membrane and Water Treatment
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    • 제6권3호
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    • pp.251-262
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    • 2015
  • In this work the preparation and characterization of a membrane containing a uniform mesoporous Titanium oxide top layer on a porous stainless steel substrate has been studied. The 316 L stainless steel substrate was prepared by powder metallurgy technique and modified by soaking-rolling and fast drying method. The mesoporous titania membrane was fabricated via the sol-gel method. Morphological studies were performed on both supported and unsupported membranes using scanning electron microscope (SEM) and field emission scanning microscope (FESEM). The membranes were also characterized using X-ray diffraction (XRD) and $N_2$-adsorption / desorption measurement (BET analyses). It was revealed that a defect-free anatase membrane with a thickness of $1.6{\mu}m$ and 4.3 nm average pore size can be produced. In order to evaluate the performance of the supported membrane, single-gas permeation experiments were carried out at room temperature with nitrogen gas. The permeability coefficient of the fabricated membrane was $4{\times}10^{-8}\;lit\;s^{-1}\;Pa^{-1}\;cm^{-1}$.

Epitaxial growth of yttrium-stabilized HfO$_2$ high-k gate dielectric thin films on Si

  • Dai, J.Y.;Lee, P.F.;Wong, K.H.;Chan, H.L.W.;Choy, C.L.
    • E2M - 전기 전자와 첨단 소재
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    • 제16권9호
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    • pp.63.2-64
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    • 2003
  • Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

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고효율 방사선 검출 센서를 위한 PbO 박막의 소결효과에 대한 연구 (The study of PbO's sintering effect for high efficiency x-ray detection sensor)

  • 정숙희;김윤석;김영빈;김민우;오경민;윤민석;남상희;박지군
    • 한국방사선학회논문지
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    • 제3권3호
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    • pp.37-40
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    • 2009
  • 본 연구에서는 디지털 엑스레이 검출기의 직접 방식 다결정 lead oxide(PbO)를 이용하여 고효율 방사선 검출 센서를 제작하였다. 나노 크기의 PbO 입자들은 높은 효율을 가지기 위하여 액상법에 의한 합성법을 통하여 제작되었다. 제작된 나노 크기의 PbO 입자를 이용하여 실온에서 $200{\mu}m$ 두께의 후막을 PIB(particle-in-binder) 방법으로 다양한 온도에서 ITO(Induim Tin Oxide) 유리 위에 도포되었다. 제작된 PbO 후막은 누설전류, 엑스레이 감도, 신호 대 노이즈 비(SNR)을 통해 전기학적 특성이 분석되었다. 이로서 후막의 전기적 특성이 열처리 온도에 따라 많은 영향을 미치는 것을 발견하였고 산소 분위기에서 $500^{\circ}C$의 온도로 열처리과정을 거친 후막이 엑스레이 검출 센서로서의 효율이 가장 높다는 결론을 도출할 수 있었다.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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OLED소자를 위한 그래핀 투명전극에 대한 연구

  • 김영훈;박준균;정영종;노용한
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.237.1-237.1
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    • 2015
  • OLED의 낮은 외부 광자 효율 문제를 해결하기 위해서는 발광층은 물론 전극 재료에 대한 연구가 함께 진행되어야 한다. 최근 플렉서블 디스플레이(Flexible Display) 분야에서 투명전극(Transparent Electrode)은 큰 주목을 받고 있다. 기존 전자소자의 투명전극으로는 인듐산화물(ITO, Indium Tin Oxide)이 널리 사용되어 왔으나, ITO의 주원료인 인듐(Indium)은 희소성으로 인해 앞으로 30년 후에 고갈될 것으로 예상되어 ITO를 대체할만한 투명전극 재료가 필요하게 되었다. 인듐이 포함되지 않은(Indium-free) 투명전극을 개발하려는 많은 연구들이 진행 중인데, 본 연구에서는 PEN(Polyethylene Naphthalate) 유연기판 상에 그래핀(Graphene)을 투명전극으로 구현하여 OLED의 효율을 높이는데 이용하고자 하였다. 화학 기상 증착(CVD, Chemical Vapor Deposition) 방법을 이용하여 Cu 호일 위에 그래핀을 성장시킨 후 PEN 유연기판에 전사하여 그래핀 투명전극을 구현하면서 그래핀 성장층을 단층 또는 다층으로 구분하여 성장시켜 각각의 투명전극을 구현해보았다. 유연기판 상의 그래핀의 상태를 확인하기 위해 라만 분광(Raman Spectroscopy) 분석을 이용하여 그래핀 고유의 라만 꼭지점(Raman peak)인 G 꼭지점(G peak: 1580 cm-1), 2D 꼭지점(2D peak: ~2700 cm-1)을 확인하였는데 그래핀 전사 상태가 양호하여 D 꼭지점(D peak: ~1360 cm-1)은 나타나지 않았다. 원자힘 현미경(AFM, Atomic Force Microscope) 분석을 통해 다층 및 단층 그래핀 표면의 거칠기(Roughness) 및 두께(Thickness)를 각각 확인할 수 있었고 자외선-가시광선 분광법(UV-Visible Spectroscopy) 분석으로 그래핀 투명전극과 유연기판의 투과도(Transmittance)를 분석하였으며, 단층 그래핀 투과도가 90%수준의 높은 값이 나타나 ITO보다 개선됨을 확인하였다. 그래핀 면저항은 TLM(Transmission Line Measurement)법을 통해 측정하였는데, 단층 그래핀의 경우 $800{\Omega}/{\square}$ 내외 수준임을 확인할 수 있었다. 본 연구에서는 근자외선 영역에서 높은 투과도와 우수한 전기적 특성을 가지는 그래핀 투명 전도성 전극 구조를 제안하고, 나아가 가시영역에서 ITO를 대체할 수 있는 투명 전도성 전극 물질을 개발함으로써 발광다이오드의 광효율을 높일 수 있는 투명 전도성 전극을 구현하였다.

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Investigation of Vanadium-based Thin Interlayer for Cu Diffusion Barrier

  • 한동석;박종완;문대용;박재형;문연건;김웅선;신새영
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.41.2-41.2
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    • 2011
  • Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

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