• 한국레이저가공학회지
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• 제13권1호
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• pp.11-15
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• 2010

Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.41-44
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• 2003

As the device feature size is reduced to the deep sub-micron regime, the chemical mechanical polishing (CMP) technology is widely recognized as the most promising method to achieve the global planarization of the multilevel interconnection for ULSI applications. However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

• 한국산학기술학회논문지
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• 제12권3호
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• pp.1308-1312
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• 2011

CCFL(Cold Cathode Fluorescent Lamp)는 LCD의 BLU와 특수조명용으로 널리 활용되고 있다. CCFL 제조공정에 있어 CCFL 전극 산화막이 형성되어 솔더 불량을 가져오기 때문에 산화 막 제거가 필요하다. 본 논문에서는 CCFL 전극 산화 막 제거를 위하여 플라즈마 처리를 수행하였다. 플라즈마 처리 최적 공정 확보하기위하여 면 저항, XRD, AFM, 솔더링 테스트 등의 분석이 진행되었다. 플라즈마 최적 공정 조건인 사용전력 600W와 처리시간 70초에서 최소의 면 저항과 최대의 솔더 피복 비율이 측정되었다. 이와 같은 현상은 플라즈마 처리로 구리 산화 막 제거에 기인한 것으로 확인되어 플라즈마를 이용한 전극 산화 막 제거 공정은 CCFL 전극 처리 공정에 활용이 기대된다.

• 한국환경과학회지
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• 제22권1호
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• pp.83-89
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• 2013

Silicon carbide with aluminium oxide was used to remove the sulphur hexafluoride ($SF_6$) gas using microwave irradiation. The destruction and removal efficiencies (DREs) of $SF_6$ were studies as a function of various decomposition temperatures and microwave powers. The decomposition of $SF_6$ gas was analyzed using GC-TCD. XRD (X-ray powder diffraction) and XRF (X-ray Fluorescence Spectrometer) were used to characterize the properties of aluminum oxide. DREs of $SF_6$ were increased as the microwave powers were increased. Additive aluminium oxide on SiC increased the removal efficiencies and decreased the decomposition temperature. The XRD results show that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ during $SF_6$ decomposition by microwave irradiation. It was found that the best material to control $SF_6$ was SiC with $Al_2O_3$ 30 wt% in consideration of microwave energy consumption and $SF_6$ decomposition rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.366-367
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• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• 전기화학회지
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• 제20권1호
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• pp.1-6
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• 2017

본 연구에서는 구리 배선 공정에서 구리 씨앗층 표면에 형성되는 구리 자연산화물을 제거하는 표면 전처리가 후속 구리 전착에 미치는 영향을 살펴보았다. 구리 배선 공정의 화학적 기계적 연마 공정에서 사용하는 citric acid 기반의 용액을 구리 표면 전처리 과정에 적용하여 표면에 존재하는 구리 자연 산화물을 제거하였고, 용액 조성 변화를 통해 산화물 제거의 선택성을 높여 구리 씨앗층의 손실을 최소화하였다. 또한 표면 전처리 후 구리 전해 전착과 무전해 전착을 시도하여 전착한 박막의 비저항, 표면 거칠기 등의 성질을 비교하고, 이를 통해 선택적으로 구리 산화물을 제거한 이후에 전착된 박막의 비저항과 표면 거칠기가 가장 낮게 나타남을 확인하였다.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• Bulletin of the Korean Chemical Society
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• 제34권8호
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• pp.2358-2366
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• 2013

Iron oxide (ferrihydrite, hematite, and magnetite) coated silica gels were prepared using a low-cost, easily-scalable and straightforward method as the adsorbent material for arsenic removal application. Adsorption of the anionic form of arsenic oxyacids, arsenite ($AsO^{2-}$) and arsenate ($AsO{_4}^{3-}$), onto hematite coated silica gel was fitted against non-linear 3-parameter-model Sips isotherm and 2-parameter-model Langmuir and Freundlich isotherm. Adsorption kinetics of arsenic could be well described by pseudo-second-order kinetic model and value of adsorption energy derived from non-linear Dubinin-Radushkevich isotherm suggests chemical adsorption. Although arsenic adsorption process was not affected by the presence of sulfate, chloride, and nitrate anions, as expected, bicarbonate and silicate gave moderate negative effects while the presence of phosphate anions significantly inhibited adsorption process of both arsenite and arsenate. When the actual efficiency to remove arsenic was tested against 1 L of artificial arsenic-contaminated groundwater (0.6 mg/L) in the presence competing anions, the reasonable amount (20 g) of hematite coated silica gel could reduce arsenic concentration to below the WHO permissible safety limit of drinking water of $10{\mu}g/L$ without adjusting pH and temperature, which would be highly advantageous for practical field application.

• 한국주조공학회지
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• 제20권1호
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• pp.38-45
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• 2000

The remelting for recycling or thin aluminum scrap, such as aluminum chip generally involves melting of these pieces submerged in molten salt flux. In this study, the effects of salt flux compositions and alloying elements on the aluminum dropletscoalescence and oxide film removal were studied in 99.8%Al, Al-1.01%Cu, Al-1.03%Si, and Al-1.38%Mg alloys as a function of holding time at $740^{\circ}C$ Salt fluxes based on NaCl-KCl(1:1) with addition of 5wt.% fluorides(NaF, $Na_3AlF_6$, $CaF_2$) or 5 wt.% chloride($MgCl_2$, $AlCl_3$) were used. The experimental results show that NaCl-KCl(1:1) with addition of 5 wt.% fluorides exhibits better coalescence ability than that with chlorides. The oxide film is not removed by NaCl-KCl(1:1) with addition of 5 wt.%chlorides, while it is removed by NaCl-KCl(1:1) with addition of 5 wt.% fluorides. The aluminum droplets coalescence and oxide film removal by salt fluxes are related to interfacial tension tension between metal and salt flux.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.152-153
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• 1996