• Title/Summary/Keyword: oxide removal

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망간산화물을 이용한 TNT 환원부산물의 산화-공유결합 반응

  • 강기훈;임동민;신현상
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2004.04a
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    • pp.43-46
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    • 2004
  • Explosive chemicals have been major soil and groundwater contaminants especially in the nations with active military activities. Of these explosives, 2,4,6-trinitrotoluene (TNT) is the most refractory one due to its structural characteristics. Although its efficient reduction by Fe(0) is well-known, the reduction products - mainly aminotoluenes - still possess toxicities to terrestrial biota, and are resistant to biological degradation. In this study, therefore, abiotic transformation of TNT reduction products via oxidative-coupling reaction was evaluated using Mn oxide which is ubiquitous in natural soils. The transformation efficiency is increased with the number of amino groups. Considering the very efficient reduction rate of TNT by Fe(0), Mn oxide can be successfully used for the removal of TNT reduction products.

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BOF Refining of Fluorspar Substitute Using Iron Oxide Based By-product (산화철계 형석대체제의 전로 정련특성)

  • Keum, C.H.;Hur, B.Y.
    • Korean Journal of Materials Research
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    • v.16 no.5
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    • pp.336-340
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    • 2006
  • Fluorspar has been essential flux in steelmaking process. The main effects of fluorspar addition are lowering of the viscosity and melting temperature of slag. In recent years, due to the increasing price and environmental problem of fluorspar, various types of fluorspar substitute have been investigated. In this study, iron oxide by-products such as sinter dust, basic oxygen furnace (BOF) sludge and mill scale were developed as a substitute in terms of waste recycling. Several plant trials were carried out by addition of briquetted substitutes of $4{\sim}6$ kg/ton to compare with the fluorspar of $0.7{\sim}1$ kg/ton. The substitutes showed a similar behavior of slag formation, phosphorus removal and MgO saturation content.

THE CHARACTERISTICS OF FRETTING WEAR

  • Iwabuchi, Akira
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1996.05a
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    • pp.1-3
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    • 1996
  • The characteristics of fretting wear are reviewed. Fretting damage depends on slip amplitude and classified into three groups: (1) an annular damage according to Mindlin's analysis at microslip region, (2) strong adhesive deformation without loose wear particles at the intermediate region, and (3) formation of fine oxide particles at the gross slip region. The critical slip amplitude of fretting is the boundary between (2) and (3). The boundary slip amplitude depends on normal load. The wear rate increases and saturates with increasing slip amplitude. But it is constant by considering the critical amplitude. The role of oxide particles are discussed. Three different actions are noted: accelerating wear, preventing wear and insignificant effect. The oxide shows two opposing effect depends on normal load and slip amplitude. This is related to the removal rate from the interface (abrasive action) and compaction rate at the interface to form a protective layer. The effect of oxidation is significant to determine the wear and friction. The diffusion of oxygen is restricted at the small amplitude. As a result, crack formation at the boundary is a predominant damage, related to fretting fatigue damage.

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NO2 gas sensing based on graphene synthesized via chemical reduction process of exfoliated graphene oxide

  • Khai, Tran Van;Prachuporn, Maneeratanasarn;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.2
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    • pp.84-91
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    • 2012
  • Single and few-layer graphene nanosheets (GNs) have successfully synthesized by a modified Hummer's method followed by chemical reduction of exfoliated graphene oxide (GO) in the presence of hydrazine monohydrate. GO and GNs were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffractions (XRD), Raman spectroscopy, Transmission electron microscopy (TEM), Atomic force microscopy (AFM), Optical microscopy (OM) and by electrical conductivity measurements. The result showed that electrical conductivity of GNs was significantly improved, from $4.2{\times}10^{-4}$ S/m for GO to 12 S/m for GNs, possibly due to the removal of oxygen-containing functional group during chemical reduction. In addition, the $NO_2$ gas sensing characteristics of GNs are also discussed.

Improvement of Oxide-Mechanical Polishing Characteristics According to the Ceria Abrasive Adding (세리아 연마제 첨가량에 따른 산화막 CMP 특성 고찰)

  • Han, Sang-Jun;Park, Sung-Woo;Lee, Woo-Sun;Sea, Yong-Jin
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.87-88
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    • 2006
  • To investigate the possibility of ceria abrasive-added slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, two kinds of retreated methods were introduced as follows: First, the characteristics of mixed abrasive slurry (MAS) using $CeO_2$ powder as an abrasive added within diluted silica slurry (DSS) were evaluated to achieve the improvement of removal rates and non-uniformity. Second, the control of pH level due to the dilution of slurry was examined. And then, we have discussed the CMP characteristics as a function of abrasive dispersion time.

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Characteristics and Formation of Thermal Oxidative Film Silicon Carbide for MOS Devices (MOS 소자용 Silicon Carbide의 열산화막 생성 및 특징)

  • O, Gyeong-Yeong;Lee, Gye-Hong;Lee, Gye-Hong;Jang, Seong-Ju
    • Korean Journal of Materials Research
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    • v.12 no.5
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    • pp.327-333
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    • 2002
  • In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

Etch characteristics of ITO(Indium Tin Oxide)using ${SF_6}/{O_2}$-gas ECR(Electron Cyclotron Resonance) plasmas (ECR을 이용한 ${SF_6}/{O_2}$ 가스 플라즈마에 의한 ITO의 식각 특성연구)

  • 권광호;강승열;김곤호;염근영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.7
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    • pp.563-567
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    • 2000
  • We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

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Study on Polishing Mechanism of Thermal Oxide Film after High-Temperature Conditioning (고온 패드 컨디셔닝 후 열산화막 연마 메커니즘 연구)

  • Choi, Gwon-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.193-194
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    • 2005
  • By the high-temperature pad conditioning process: The slurry residues in pores and grooves of the polishing pad were clearly removed. These clear pores and enlarged grooves made the slurry attack the oxide surface. The changed slurry properties by high-temperature pad conditioning process made the oxide surface hydro-carbonate to be removed easily.

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Enhancement of phosphate removal using stabilized Fe-Mn particle (Fe-Mn 입자의 안정화를 통한 인산염 효율 향상)

  • Seoyeon Kang;Jeongwoo Shin;Byugnryul An
    • Journal of Korean Society of Water and Wastewater
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    • v.37 no.6
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    • pp.375-382
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    • 2023
  • The binary oxide adsorbent using Fe and Mn (Fe-Mn) has been prepared by precipitation method to enhance the removal of phosphate. Different amounts of chitosan, a natural organic polymer, were used during preparation of Fe-Mn as a stabilizer to protect an aggregation of Fe-Mn particles. The optimal amount of chitosan has been determined considering the separation of the Fe-Mn particles by gravity from solution and highest removal efficiency of phosphate (Fe-Mn10). The application of Fe-Mn10 increased removal efficiency at least 15% compared to bare Fe-Mn. According to the Langmuir isotherm model, the maximum uptake (qm) and affinity coefficient (b) were calculated to be 184 and 240 mg/g, and 4.28 and 7.30 L/mg for Fe-Mn and Fe-Mn10, respectively, indicating 30% and 70% increase. The effect of pH showed that the removal efficiency of phosphate was decrease with increase of pH regardless of type of adsorbent. The enhanced removal efficiency for Fe-Mn10 was maintained in entire range of pH. In the kinetics, both adsorbents obtained 70% removal efficiency within 5 min and 90% removal efficiency was achieved at 1 h. Pseudo second order (PSO) kinetic model showed higher correlation of determination (R2), suggesting chemisorption was the primary phosphate adsorption for both Fe-Mn and Fe-Mn10.

A Study on CMP Properties of SnO2 Thin Film for Application of Gas Sensor (가스센서 적용을 위한 SnO2 박막의 CMP 특성 연구)

  • Lee, Woo-Sun;Choi, Gwon-Woo;Kim, Nam-Hoon;Park, Jin-Seong;Seo, Yong-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1296-1300
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    • 2004
  • SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.