• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.112-112
• /
• 2013

Well-defined surfaces of single-crystalline solid materials are starting points of self-organizationof nanostructures and chemical reactions controlled in nanoscale. Although highly ordered atomicarrangement can be obtained on semiconductor surfaces, they can be maintained only in vacuumand not in air or in aqueous environment. Since single-crystalline metal oxide surfaces arechemically stable and no further oxidation occurs, their atomic structures can be utilized fornanofabrication in liquid processes, nanoelectrochemistry and nanobiotechnology. Sapphire is oneof the most stable metal oxides and its crystalline quality is excellent, as can be applied to electronicdevices that require ultralow defect densities. We recently found that chemical phase separationoccurs on sapphire surfaces by annealing processes and the formed nanodomains exhibit specificproperties in air and in water [1,2]. In our experiments, highly selective and controllable adsorptionof various protein molecules is observed on the phase-separated surfaces though the materials andcrystallographic orientations are identical [3,4]. Planar lipid bilayers supported on thephase-separated sapphire surface also exhibit a specific formation site selectivity [5]. Chemicalnanodomains appear on other metal-oxide surfaces, such as well-ordered titania surfaces. Wedemonstrate that surface chemistry of the nanodomains can be characterized in aqueousenvironment using atomic force microscopy equipped with colloidal tips and then show adsorptionand desorption behaviors of various proteins on the phase-separated surfaces.

• Corrosion Science and Technology
• /
• v.9 no.6
• /
• pp.247-253
• /
• 2010

The characteristics of selective oxidation prior to hot-dip galvanizing with the annealing atmosphere dew point and chemical composition in dual-phase steels and their effect on the inhibition layer formation relevant to coating adhesion have been studied using a combination of electron microscopic and surface analytical techniques. The annealed and also galvanized samples of 3 kinds of Si/Mn ratios with varied amounts of Si addition were prepared by galvanizing simulator. The dew point was controlled at soaking temperature $800^{\circ}C$ in 15%$H_2$ -85%$N_2$ atmosphere. It was shown that good adhesion factors were mainly uniformity of oxide particle distribution of low number density and low Si/Mn ratio prior to hot-dip galvanizing. Their effect was the greatly reduced coating bare spots and the formation of uniform inhibition layer leading to good adhesion of Zn overlay. The mechanism of good adhesion is suggested by two processes: the formation of inhibition layer on the oxide free surface uncovered with no $SiO_2$-containing particles in particular, and the inhibition layer bridging of oxide particles. The growth of inhibition layer was enhanced markedly by the delayed reaction of Fe and Al with the increase of Si/Mn ratio.

• Journal of the Korean Ceramic Society
• /
• v.27 no.6
• /
• pp.799-807
• /
• 1990

In this study, effects of oxide additives on mechanical properties and microstructure of A1N and A1N polytype ceramics were investigated. Fine A1N powder was synthesized by nitriding alumiuim hydroxide prepared from Al-isopropoxide, at 1350$^{\circ}C$ for 10h in N2 atmosphere. By adding 3w/o Y2O3, 0.56w/o CaO, and 10w/o SiO2 to AlN powder, AlN and AlN polytype ceramics were prepared by hot-pressing under the pressure of 30 MPa at 1800$^{\circ}C$ for 1h. AlN ceramics with no additives formed considerable amount of AlON phase, while AlN ceramics doped with Y2O3 or CaO decreased AlON phase and formed Y-Al or Ca-Al oxide compound. AlN＋10w/o SiO2(＋3w/o Y2O3) composition produced AlON and AlN polytype compound having 21R as a major phase. Room temperature flexural strength of AlN ceramics with no additive was 246MPa, and room temperature flexural strength and critical temperature difference by thermal shock(ΔTc) of AlN ceramics dooped with Y2O3 or CaO were 532MPa/340$^{\circ}C$ and 423MPa/300$^{\circ}C$, respectively. Y2O3 and CaO used as sintering agent played roles of densification and oxygen removal of AlN ceramics, and affected grain growth/grain morphologies of AlN ceramics.

• Journal of Microbiology and Biotechnology
• /
• v.23 no.1
• /
• pp.99-105
• /
• 2013

In this study, nitrous oxide ($N_2O$) emission was compared between the operations of two different sequencing batch reactors, conventional sequencing batch reactor (CNVSBR) and simultaneous nitrification and denitrification sequencing batch reactor (SND-SBR), using synthetic wastewater. The CNV-SBR consisted of anoxic (denitrification) and aerobic phases, whereas the SND-SBR consisted of a microaerobic (low dissolved oxygen concentration) phase, which was achieved by intermittent aeration for simultaneous nitrification and denitrification. The CNV-SBR emitted 3.9 mg of $N_2O$-N in the denitrification phase and 1.6 mg of $N_2O$-N in the nitrification phase, resulting in a total emission of 5.5mg from 432mg of $NH_4^+$-N input. In contrast, the SND-SBR emitted 26.2mg of $N_2O$-N under the microaerobic condition, which was about 5 times higher than the emission obtained with the CNV-SBR at the same $NH_4^+$-N input. From the $N_2O$ yield based on $NH_4^+$-N input, the microaerobic condition produced the highest yield (6.1%), followed by the anoxic (0.9%) and aerobic (0.4%) conditions. It is thought that an appropriate dissolved oxygen level is critical for reducing $N_2O$ emission during nitrification and denitrification at wastewater treatment plants.

• Korean Journal of Materials Research
• /
• v.22 no.4
• /
• pp.174-179
• /
• 2012

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

• Journal of the Korean Professional Engineers Association
• /
• v.15 no.1
• /
• pp.36-40
• /
• 1982

This study is to characterize Ago stability useful for manufacturing silver oxide button cell, and deter mined by test tube gassing evaluations and by cell expansion and further discuss en the effectiveness of pellet reduction treatments to obtain single plateau discharge Profile and relevent performance.

• Corrosion Science and Technology
• /
• v.3 no.5
• /
• pp.198-208
• /
• 2004

Although there has been no general agreement on the mechanism of primary water stress corrosion cracking (PWSCC) as one of major degradation modes of Ni-base alloys in pressurized water reactors (PWR's), common postulation derived from previous studies is that the damage to the alloy substrate can be related to mass transport characteristics and/or repair properties of overlaid oxide film. Recently, it was shown that the oxide film structure and PWSCC initiation time as well as crack growth rate were systematically varied as a function of dissolved hydrogen concentration in high temperature water, supporting the postulation. In order to understand how the oxide film composition can vary with water chemistry, this study was conducted to characterize oxide films on Alloy 600 by an in-situ Raman spectroscopy. Based on both experimental and thermodynamic prediction results, Ni/NiO thermodynamic equilibrium condition was defined as a function of electrochemical potential and temperature. The results agree well with Attanasio et al.'s data by contact electrical resistance measurements. The anomalously high PWSCC growth rate consistently observed in the vicinity of Ni/NiO equilibrium is then attributed to weak thermodynamic stability of NiO. Redox-induced phase transition between Ni metal and NiO may undermine the integrity of NiO and enhance presumably the percolation of oxidizing environment through the oxide film, especially along grain boundaries. The redox-induced grain boundary oxide degradation mechanism has been postulated and will be tested by using the in-situ Raman facility.

• Journal of the Korean Ceramic Society
• /
• v.49 no.4
• /
• pp.342-346
• /
• 2012

This work deals with the preparation of dense SiC based ceramics with high electrical conductivity without oxide sintering additives. SiC samples with different content of conductive Ti-NbC phase were hot pressed at $1850^{\circ}C$ for 1 h in Ar atmosphere under mechanical pressure of 30 MPa. The conductive phase is a mixture of Ti-NbC in weight ratio of Ti/NbC 1:4. Composite with 50% of conductive Ti-NbC phase showed the highest electrical conductivity of $30.6{\times}10^3\;S{\cdot}m^{-1}$, while the good mechanical properties of SiC matrix were preserved (fracture toughness 4.5 $MPa{\cdot}m^{1/2}$ and Vickers hardness 18.7 GPa). The obtained results show that use of NbC and Ti as sintering and also electrically conductive additives is appropriate for the preparation of SiC-based composite with sufficient electrical conductivity for electric discharge machining.

• Electrical & Electronic Materials
• /
• v.16 no.9
• /
• pp.62.2-62
• /
• 2003

Material Characteristics of zirconium oxide thin films obtained by plasma enhanced chemical vapor deposition on p-type Si(100) substrates were investigated to explain their unable electrical properties. The films obtained without heating had polycrystalline nanograins that are mostly of a tetragonal phase under oxygen-deficient plasma conditions but transformed into a monoclinic phase with increasing $O_2$ addition in the plasma. Mostly amorphous bulk $ZrO_2$ with a relatively thicker and smoother interfacial layer was obtained from oxygen-rich plasmas, resulting in a decrease in both the overall dielectric constant and the leakage current density. the interfacial layer formed between the bulk $ZrO_2$ and Si substrate was analyzed to be zirconium silicate, which approached $SiO_2$ as its zirconium content decreased with the increasing gas phase $O_2$ content.

• Proceedings of the KSME Conference
• /
• 2004.11a
• /
• pp.1162-1165
• /
• 2004

Size and crystalline phase changes of $Fe_{2}O_{3}$ nanoparticles formed in a $H_{2}/O_{2}$ flame have been investigated. At flame temperatures below $1350^{\circ}C$, the mean particle size increased monotonously with the distance from the burner edge; but in high-temperature flames above $1650^{\circ}C$, it suddenly decreased from 20 nm to ${\sim}3$ nm with the distance from the burner edge. The results of X-ray diffraction and HRTEM showed that this sudden reduction of the size of nanoparticles was accompanied by a partial phase transformation from ${\gamma}$-$Fe_{2}O_{3}$ into ${\alpha}$-$Fe_{2}O_{3}$. We suggest the structural instability due to ${\gamma}-$ to ${\alpha}-phase$ transformation as a mechanism for a rapid fragmentation of 20 nm particles into 3 nm ones.