• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.382-383
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• 2007

PMMA plate with nano-sized pattern was synthesized on anodized aluminum oxide template by bluk polymerization method. Anodized aluminum oxide was used as a template to synthesize the PMMA plate with nano-sized pattern. The polymerization of MMA was performed at $75-79^{\circ}C$. It is verified from SPM results that the nano-sized pattern on synthesized PMMA plate was well transferred from that of anodized aluminum oxide template.

• 대한전자공학회논문지
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• 제25권5호
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• pp.495-500
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• 1988

The effectiveness of tri layer resist (TLR) technique is compared with that of single layer resist (SLR) technique in order to make a 0.8um pattern with the linewidth deviation of 10 percents. SLR technique is not appropriate to shape the micro-pattern on oxide and aluminum steps because of the standing wave effect and the light scattering effect in shaping the resist pattern. On the contrary, the uniform line with a width of 0.8um on oxide and aluminum steps can be formed by TLR technique, reducting such effects. The planarization and the light absorption coefficient of the bottom layer resist in TLR are optimized by exposing it to ultra violet light after baking it for 30min at 230\ulcorner. An uniform line with a width of 0.8um on oxide step is defined with the light absorption coefficient of 0.85 whereas that on aluminum step is defined with 0.95.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.531-532
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• 2010

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.221-224
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• 2002

Recently, simulation of Chemical Mechanical Polis hing is becoming more important because Process parameters on the material removal rate are complicated. And pattern-depent effects are a key concern in CMP processes. In this paper, we have been studied the changes of pattern density vs. oxide thickness with Stine's simulation model. We also have estimated the effective density using optimal window size with density mask, and have made a study of the change of oxide thickness as a function of polishing time.

• Asian-Australasian Journal of Animal Sciences
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• 제4권1호
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• pp.79-83
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• 1991

Diurnal variation in faecal chromic oxide levels was estimated from 4 hourly faecal sampling of 56 wethers allotted to one of six different feeding patterns. Sampling occurred on days 6 and 7 (Period 1) after a controlled release device was administered, and was repeated on days 14 and 15 (Period 2) following re-randomisation of the wethers to the feeding patterns. Increasing the frequency of feeding tended to be associated with higher faecal chromic oxide levels (p < 0.05), particularly in wethers fed thrice daily at 8 hour intervals. There was no interaction between feeding pattern and period, sampling day or time within-day. There were significant period x time within-day (p < 0.05) and day x time within-day (p < 0.001) interactions, indicating that variation in faecal chromic oxide between sample times was not consistent. This implies that sampling at any time of day is unlikely to result in a biased estimate of pasture intake, providing sufficient samples are collected. Significant period (p < 0.001) and period x day (p < 0.01) effects were associated with slow faecal chromic oxide equilibration in period 1. Equilibration did not occur until after day 7, indicating a need for caution when commencing sampling.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.443-444
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• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.240-243
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• 2009

Recently, many researches on the development of super-hydrophobic and anti-reflective surfaces have been concentrated on the fabrication of nano-patterned products. The nano-patterned mold is a key to replicate nano-patterned products by mass production techniques such as injection molding and UV molding. The present paper proposes fabricating nano-patterned mold with cost-effective method. The nano-pattern molded was fabricated by electroforming the anodic aluminum oxide template without E-beam lithography. The final mold with nano-patterns showed the pores with the diameter of $100{\sim}120$ nm and the height of 150 nm was fabricated.

• 한국세라믹학회지
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• 제34권7호
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• pp.699-702
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• 1997

The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.

• 한국재료학회지
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• 제2권1호
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• pp.76-82
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• 1992

$TEOS-O_3$ 산화막은 깔개층 물질에 따라 증착속도가 변하는 특성을 나타낸다. 본 논문에서는 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 이외에도 배선 밀도, 배선 간격에 따라 증착속도가 달라지는 패턴 의존성에 대하여 조사하였다. 또한 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 및 패턴 의존성을 줄이기 위해 다층 배선에서 1차 배선후에 깔개층, 즉 TEOS-base 프라즈마 산화막 및 $SiH_4-base$ 프라즈마 산화막을 증착했을 때 $TEOS-O_3$ 산화막의 증착 특성을 조사하였다. 그리고 그 깔개층 물질에 $N_2$ 프라즈마 처리를 했을 때 $TEOS-O_3$ 산화막의 증착 특성에 대해 조사하였다. 그 결과 $TEOS-O_3$ 산화막에서 기판 위에 배선 밀도와 배선 간격에 따른 의존성은 깔개층물질이 $SiH_4-base$ 일때보다 TEOS-base 프라즈마 산화막인 경우 $N_2$ 프라즈마 처리를 하면 깔개층 물질 표면이 O-Si-N화 되므로써 의존성이 사라지게 된다.

• Journal of Welding and Joining
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• 제30권3호
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.