• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.71-77
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• 1996

Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1702-1705
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• 2016

We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between $TiO_2$ antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the $TiO_2$ by suppressing hydrogen plasma, which could be made by excluding $H_2$ gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.31-37
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• 2004

We have proposed a design methodology for large active-area single-mode VCSELS, which have higher reliability and output power, and are well-suited for high-speed operation. The key idea underlying the design methodology is to reduce the effective index difference between active and cladding regions by controlling the thickness and position of the oxide layer. The idea is confirmed by the self-consistent effective index method. By placing the oxide layer position properly, we can increase the radius of the oxide aperture for single-mode operation by 3 times.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.65-69
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• 2002

An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

• Korean Journal of Materials Research
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• v.27 no.9
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• pp.495-500
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• 2017

Oxide layers were formed by an environmentally friendly plasma electrolytic oxidation (PEO) process on AZ91 Mg alloy. PEO treatment also resulted in strong adhesion between the oxide layer and the substrate. The influence of the KF electrolytic solution and the structure, composition, microstructure, and micro-hardness properties of the oxide layer were investigated. It was found that the addition of KF instead of KOH to the $Na_2SiO_3$ electrolytic solution increased the electrical conductivity. The oxide layers were mainly composed of MgO and $Mg_2SiO_4$ phases. The oxide layers exhibited solidification particles and pancake-shaped oxide melting. The pore size and surface roughness of the oxide layer decreased considerably with an increase in the concentration of KF, while densification of the oxide layers increased. It is shown that the addition of KF to the basis electrolyte resulted in fabricating of an oxide layer with higher surface hardness and smoother surface roughness on Mg alloys by the PEO process. The uniform thickness of the oxide layer formed on the Mg alloy substrates was largely determined by the electrolytic solution with KF, which suggests that the composition of the electrolytic solution is one of the key factors controlling the uniform thickness of the oxide layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.539-542
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• 2001

In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

• Journal of the Korean institute of surface engineering
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• v.30 no.3
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• pp.191-201
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• 1997

Non-passivated electrolytic tinplates withour conventinal chemical treatment self-oxidize in ambient atmosphere to from yellow stain on the outermost surface during the long-term storage. The degree of yellowness of the stain increased linerly with the oxide thickness due to the interfeefence color of the $SnO_2$ Even though the thickness of the oxide layer was very thin, less than 100$\AA$ , it exerts an undesirable influence on the can-making processes, particularly the stripping behavior after ironing. Investigations were carried out on the morphologies of the coating layer, the changes in oxide thickness during successive can-making processes and the averge friction coefficients with the different oxide thinkness. These oxide layers were broken up and distributed within the bulk tin coating during the ironing process. This redistribution of the oxide layer prvented smooth pressing-aside of the tin coating layer, resulting in an increase in the ironing friction coefficient. As the friction was increased, the residual stress along the can wall thinkness(i.e., the hoop stress) was also increased. Due to both the oxibe layer accumulation, which increased the friction coefficient, and the hoop stress, can stripping efficiency without roll-back is reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.128-128
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• 2009

The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreases at the substrate temperature at $200^{\circ}C$. The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• Transactions of Materials Processing
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• v.31 no.1
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• pp.17-22
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• 2022

Hot stamping is widely used to manufacture structural parts to satisfy requirements of eco-friendly vehicles. Recently, hot forming technology using uncoated steel sheet is being studied to reduce cost and solve patent problems. In particular, research is focused on process technology capable of suppressing the generation of an oxide layer. To evaluate the oxide layer in the hot stamping process, Gleeble testing machine can be used to evaluate the oxide layer by controlling the temperature history and the atmosphere condition. At this time, since cooling by gas injection is impossible to protect the oxide layer on the surface of a specimen, research on a method for securing a quenching speed through natural cooling is required. This paper proposes a specimen shape design method to secure a target quenching speed through natural cooling when evaluating the oxide layer of an un-coated boron steel sheet by Gleeble test. For the evaluation of the oxide layer of the un-coated steel sheet through the Gleeble test, dog-bone and rectangular type specimens were used. In consideration of the hot stamping process, the temperature control conditions for the Gleeble test were set and the quenching speed according to the specimen shape design was measured. Finally, the quenching speed sensitivity according to shape parameter was analyzed through regression analysis. A quenching speed prediction equation was then constructed according to the shape of the specimen. The constructed quenching speed prediction equation can be used as a specimen design guideline to secure a target quenching speed when evaluating the oxide layer of an un-coated boron steel sheet by the Gleeble test.