• Electrical & Electronic Materials
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• v.8 no.3
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• pp.352-356
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• 1995

Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.304-305
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• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.724-726
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• 2007

We have developed the synthesis method to reduce the surface oxide layer in Cu nanoparticle, which is based on controlling the molecular weight of capping polymer. In addition, we demonstrated how the variation of oxide layer thickness influences the resistivity of conductive Cu film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.491-495
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• 2017

We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.401-405
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• 2001

The effects of oxide layer formed on TiN coated ball and counter-body have been investigated from the frictional point of view during sliding tests. AISI52100 steel ball was used for the substrate of coated specimens. Two types of coated specimens were prepared by depositing TiN coating with 1 and 4$\mu\textrm{m}$ in coating thickness. AISI1045 steel was used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• The Journal of Advanced Prosthodontics
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• v.12 no.2
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• pp.100-106
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• 2020

PURPOSE. The purpose of this in vitro study was to evaluate the fitting accuracy of single crowns made from a novel presintered Co-Cr alloy prepared with a computer-aided design and computer-aided manufacturing (CAD/CAM) technique, as compared with crowns manufactured by other digital and the conventional casting technique. Additionally, the influence of oxide layer on the fitting accuracy of specimens was tested. MATERIALS AND METHODS. A total of 40 test specimens made from Co-Cr alloy were investigated according to the fitting accuracy using a replica technique. Four different methods processing different materials were used for the manufacture of the crown copings (milling of presintered (Ceramill Sintron-group_cer_sin) or rigid alloy (Tizian NEM-group_ti_nem), selective laser melting (Ceramill NPL-group_cer_npl), and casting (Girobond NB-group_gir_nb)). The specimens were adapted to a resin model and the outer surfaces were airborne-particle abraded with aluminum oxide. After the veneering process, the fitting accuracy (absolute marginal discrepancy and internal gap) was evaluated by the replica technique in 2 steps, before removing the oxide layer from the intaglio surface of the crowns, and after removing the layer with aluminum oxide airborne-particle abrasion. Statistical analysis was performed by multifactorial analysis of variance (ANOVA) (α=.05). RESULTS. Mean absolute marginal discrepancy ranged between 20 ㎛ (group_cer_npl for specimens of Ceramill NPL) and 43 ㎛ (group_cer_sin for crowns of Ceramill Sintron) with the oxide layer and between 19 ㎛ and 28 ㎛ without the oxide layer. The internal gap varied between 33 ㎛ (group_ti_nem for test samples of Tizian NEM) and 75 ㎛ (group_gir_nb for the base material Girobond NB) with the oxide layer and between 30 ㎛ and 76 ㎛ without the oxide layer. The absolute marginal discrepancy and the internal gap were significantly influenced by the fabrication method used (P<.05). CONCLUSION. Different manufacturing techniques had a significant influence on the fitting accuracy of single crowns made from Co-Cr alloys. However, all tested crowns showed a clinically acceptable absolute marginal discrepancy and internal gap with and without oxide layer and could be recommended under clinical considerations. Especially, the new system Ceramill Sintron showed acceptable values of fitting accuracy so it can be suggested in routine clinical work.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.7 no.2
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• pp.26-33
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• 2011

To evaluate steam oxidation behaviours of Alloy 617 and Haynes 230, oxidation test were performed at $900^{\circ}C$ in steam and $steam+20\;vol.-%\;H_2$ environments. Oxidation rate in steam condition was similar to that in air for Alloy 617, while it was slightly lower for Haynes 230. When hydrogen was added to steam, oxidation rate was enhanced. Isolated $MnTiO_3$ particle were formed on $Cr_2O_3$ oxide layer and sub layer $Cr_2O_3$ were formed in steam and $steam+20\;vol.-%\;H_2$ for Alloy 617. On the other hands, $MnCr_2O_3$ layer were formed on top of $Cr_2O_3$ oxide layer for Haynes 230. The extensive sub layer $Cr_2O_3$ formation was resulted from the oxygen inward diffusion in such environments. When hydrogen was added, the oxide morphology was changed from polygonal to platelet because of the accelerated diffusion of cations under the oxide layer. In addition, decarburized zone was extended as hydrogen participated into the reactions causing carbide dissolution.

• Carbon letters
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• v.14 no.4
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• pp.247-250
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• 2013

In this study, we present a facile method of fabricating graphene oxide (GO) films on the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the negatively charged GO through an electrostatic LBL assembly process. Furthermore, we investigated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO $[rGO]/rAPGO)_{10}$ deposited PI film (rGO/rAPGO/PI) and pure PI film. The water vapor transmission rate of the GO and APGO-coated PI composite film was increased due to the intrinsically hydrophilic property of the charged composite films. However, the oxygen transmission rate was decreased from 220 to 78 $cm^3/m^2{\cdot}day{\cdot}atm$, due to the barrier effect of the graphene films on the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utilization in various applications.