• Title/Summary/Keyword: oxide electrode

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Fe3O4 Nanoparticles on MWCNTs Backbone for Lithium Ion Batteries

  • Lee, Kangsoo;Shin, Seo Yoon;Yoon, Young Soo
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.376-380
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    • 2016
  • A composite electrode made of iron oxide nanoparticles/multi-wall carbon nanotube (iNPs/M) delivers high specific capacity and cycle durability. At a rate of $200mAg^{-1}$, the electrode shows a high discharge capacity of ${\sim}664mAhg^{-1}$ after 100 cycles, which is ~ 70% of the theoretical capacity of $Fe_3O_4$. Carbon black, carbon nanotube, and graphene as anode materials have been explored to improve the electrical conductivity and cycle stability in Li ion batteries. Herein, iron oxide nanoparticles on acid treated MWCNTs as a conductive platform are combined to enhance the drawbacks of $Fe_3O_4$ such as low electrical conductivity and volume expansion during the alloying/dealloying process. Enhanced performance was achieved due to a synergistic effect between electrically 3D networks of conductive MWCNTs and the high Li ion storage ability of $Fe_3O_4$ nanoparticles (iNPs).

Overlapping Rates of Laser Spots on the Laser Direct Patterning of ITO Electrode in the Double-layer Structure of Thin Film (이층 박막 구조에서 ITO 전극의 레이저 직접 패터닝 시레이저 식각 패턴 중첩 비율의 변화)

  • Wang, Jian-Xun;Park, Jung-Cheul;Kwon, Sang-Jik;Cho, Eou-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.5
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    • pp.377-380
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    • 2012
  • Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

Employing Al Etch Stop Layer for Nb-based SNS Josephson Junction Fabrication Process (Al 식각정지층을 이용한 Nb-based SNS 조셉슨 접합의 제조공정)

  • Choi, J.S.;Park, J.H.;Song, W.;Chong, Y.
    • Progress in Superconductivity
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    • v.12 no.2
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    • pp.114-117
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    • 2011
  • We report our efforts on the development of Nb-based non-hysteretic Josephson junction fabrication process for quantu device applications. By adopting and modifying the existing Nb-aluminum oxide tunnel junction process, we develop a process for non-hysteretic Josephson junction circuits using metal-silicide as metallic barrier material. We use sputter deposition of Nb and $MoSi_2$, PECVD deposition of silicon oxide as insulator material, and ICP-RIE for metal and oxide etch. The advantage of the metal-silicide barrier in the Nb junction process is that it can be etched in $SF_6$ RIE together with Nb electrode. In order to define a junction area precisely and uniformly, end-point detection for the RIE process is critical. In this paper, we employed thin Al layer for the etch stop, and optimized the etch condition. We have successfully demonstrated that the etch stop properties of the inserted Al layer give a uniform etch profile and a precise thickness control of the base electrode in Nb trilayer junctions.

Physical Properties of ITO/PVDF as a function of Oxygen Partial Pressure (산소 분압 조절에 따른 ITO/PVDF 박막 물성 조절 연구)

  • Le, Sang-Yub;Kim, Ji-Hwan;Park, Dong-Hee;Byun, Dong-Jin;Choi, Won-Kook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.923-929
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    • 2008
  • On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

Incorporation of Manganese Oxide Nanoparticles Into Polyaniline Hollow Nanospheres and Its Application to Supercapacitors

  • Kwon, Hyemin;Ryu, Ilhwan;Han, Jiyoung;Yim, Sanggyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.295-295
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    • 2013
  • Supercapacitors with higher energy and power density are attracting growing attention for their wide range of potential applications such as portable electronic equipments, hybrid vehicle and cellular devices. In various classes of materials for supercapacitors, the redox pseudocapacitive materials such as conducting polymers and metal oxides have been most widely studied recently. The nanostructuring of the electrode surface has also been focused on since it can provide large surface area and consequently easy diffusion of ions in the capacitors. Among the active materials, in this work, we have used polyaniline (PANi) and manganese oxide ($MnO_2$). PANi is one of the promising electrode and active materials due to its desirable properties such as high electrochemical activity, high doping level and stability. $MnO_2$ is also widely studied material for supercapacitors since it is relatively cheap and environmentally friendly. In this work, we fabricated PANi hollow nanospheres by polymerizing aniline monomers on the polystyrene (PS) nanospheres and then dissolving the inner PS spheres. This nanostructuring of the PANi surface can provide large surface area and hence easy diffusion of electrolyte ions. We also incorporated $MnO_2$ nanoparticles into the PANi hollow nanospheres and investigated its electrochemical properties. It is expected that the combination of these two active materials with slightly different working potential windows show synergetic effects such as broader working potential range and enhanced specific capacitance.

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Electrochemical Properties of Indium Tin Oxide Electrodes Immersed in a Cell Culture Medium with Fetal Bovine Serum (Fetal Bovine Serum을 포함한 세포 배양액에 담근 Indium Tin Oxide 전극 계면의 전기화학적 특성)

  • Choi, Won Seok;Cho, Sungbo
    • Journal of Biomedical Engineering Research
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    • v.34 no.1
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    • pp.34-39
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    • 2013
  • For the biocompatibility test of implantable devices or for the sensitivity evaluation of biomedical sensors, it is required to understand the mechanism of the protein adsorption and the interaction between the adsorbed proteins and cells. In this study, the adsorption of proteins in a cell culture medium with fetal bovine serum onto an indium tin-oxide electrode was characterized by using linear sweep voltammetry and impedance spectroscopy. We immersed the fabricated ITO electrodes in the culture medium for 30, 60, or 90 min, and then measured the electrochemical properties of electrodes with 10 mM $Fe(CN){_6}^{3-/4-}$ and 0.1 M KCl electrolyte. With an increase of contacting time, the anodic peak current was decreased and the charge transfer resistance was increased. However, both parameters were recovered to the values before contact with the medium after the treatment of Trypsin/Ethylenediaminetetraacetic acid hydrolyzing proteins.

Optical Properties of Transparent Electrode ZnO Thin Film Grown on Carbon Doped Silicon Oxide Film (탄소주입 실리콘 산화막 위에 성장한 투명전극 ZnO 박막의 광학적 특성)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.13-16
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    • 2012
  • Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

Materials and Characteristics of Emerging Transparent Electrodes (차세대 투명전극 소재의 종류와 특성)

  • Chung, Moon Hyun;Kim, Seyul;Yoo, Dohyuk;Kim, Jung Hyun
    • Applied Chemistry for Engineering
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    • v.25 no.3
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    • pp.242-248
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    • 2014
  • Flexibility of a transparent device has been required in accordance with miniaturization and mobilization needs in recent industry. The most representative material used as a transparent electrode is indium tin oxide (ITO). However, a couple of disadvantages of ITO are the exhaustion of natural resource of indium and its inflexibility due to inorganic substance. To overcome the limit of ITO, a variety of alternative materials have been researched on development of transparent electrodes and its properties through composite materials. In this review, we classify some of emerged materials with their general studies.