• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.424-430
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS (metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by AES, SIMS, TEM and AFM. The ONO films with different dimension of tunneling oxide, nitride, and blocking oxide were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$(blocking oxide)/O-rich SiOxNy (interface)/ N-rich SiOxNy(nitride)/O-rich SiOxNy(tunneling oxide). In addition, the SiON phase is distributed mainly near the tunneling oxide/nitride and nitride/blocking oxide interfaces, and the $Si_2NO$ phase is distributed mainly at nitride side of each interfaces and in tunneling oxide.

• Journal of Satellite, Information and Communications
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• v.10 no.2
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• pp.90-94
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• 2015

We stuidied liauid crystal alignment treatment using solution process for making thin oxide layer in liquid crystal display. It is the one of very effient and popular process in making thin oxide layer in electronical industrial fields. Particularly, this process has highly potential value in liquid crystal display industrial fields because it cause automatically induced alignment process without tranditional alignment process in liquid crystal alignment process. We made several different kinds of mol density solutions using strontium oxide solution. And those solutions were treated for solidification layers using annealing process for 2 hours. And we stuided pretilt angle properties of these alignment layers of strontium oxide for clarifying the relationship of liquid crystal molecules and thin strontium oxide layer. And we also tested the existence of strontium oxide thin layer on substrate using XPS measurement. We expected the hig gain of electro-optical properties in liquid crystal display using strontium oxide thin layer because it has high K property material than the other metal-based oxide layers. In this results, we measured 1.447 to 1.613 thresholds volts as 0.1 mol to 0.4 mol density in 0.1 mol density steps. This is significant better characteristics than conventional liquid crystal display as higher than 1.85 thresholds volts. And it make possible to making next-generation liquid crystal display which present low-power consumption and wide gray scale in liquid crystal display.

• Journal of Chest Surgery
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• v.33 no.2
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• pp.132-138
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• 2000

Background: Inhaled nitric oxide therapy causes selective pulmonary vasodilation in congenital heart diseases with pulmonary hypertension. However discontinuation of inhaled nitric oxide therapy may be complicated by abrupt life-threatening rebound pulmonary hypertension(RPH) The purpose of this study was to prevent by comparing group I(without RPH n=13) and group II(with RPH n=6) to determine the risk factors involved inthe development of the RPH. Material and Method: Between Januarty 6, 1998 and April 14, 1999. we studied 19 consecutive children who were treated with inhaled nitric oxide for clinically significant pulmonary hypertension after an open heart surgery for congenital heart disease. the ratio of males and females was 12:7 ranging in age from 10 days to 6040 days(16 years) To identify the effects of nitric oxide between two groups we measured heart rate mean and systolic pulmonary arterial pressure mean and systolic systemic arterial pressure central venous pressure pH paO2/FiO2 and O2 saturation before and after the initiation and just before the withdrawal of the inhaled nitric oxide. result: In 6 of 19 patients(32%) withdrawal of inhaled nitric oxide caused RPH. In the two groups inhaled nitrix oxide decreased in pulmonary arterial pressure(PAP) without decreasing the systemic arterial pressure(SAP) and increased PaO2/FiO2 Compared with patients who had no RPH(group I) patients who had RPH(group II) were older in age (1204$\pm$1688 versus 546$\pm$1654 days p<0.05) received less nitric oxide therapy(34$\pm$18 versus 67$\pm$46 hours p<0.05) has shorter weaning process(5$\pm$3 versus 15一13 hours p<0.05) and received lowerconcentration of initial nitric oxide supply(11$\pm$8 versus 17$\pm$8 ppm p>0.05) and lower concentration just before the withdrawal nitric oxide(4.2$\pm$2.6 versus 5.6$\pm$2.6 ppm, p>0.05) Conclusion : We speculate that older age shorter of nitric oxide therapy shorter weaning process are the risk factors of RPH.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.609-616
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• 2019

Oxide coatings are formed on die-cast AZ91D Mg alloy through an environmentally friendly plasma electrolytic oxidation(PEO) process using an electrolytic solution of $NaAlO_2$, KOH, and KF. The effects of PEO condition with different duty cycles (10 %, 20 %, and 40 %) and frequencies(500 Hz, 1,000 Hz, and 2,000 Hz) on the crystal phase, composition, microstructure, and micro-hardness properties of the oxide coatings are investigated. The oxide coatings on die-cast AZ91D Mg alloy mainly consist of MgO and $MgAl_2O_4$ phases. The proportion of each crystalline phase depends on various electrical parameters, such as duty cycle and frequency. The surfaces of oxide coatings exhibit as craters of pancake-shaped oxide melting and solidification particles. The pore size and surface roughness of the oxide coating increase considerably with increase in the number of duty cycles, while the densification and thickness of oxide coatings increase progressively. Differences in the growth mechanism may be attributed to differences in oxide growth during PEO treatment that occur because the applied operating voltage is insufficient to reach breakdown voltage at higher frequencies. PEO treatment also results in the oxide coating having strong adhesion properties on the Mg alloy. The micro-hardness at the cross-section of oxide coatings is much higher not only compared to that on the surface but also compared to that of the conventional anodizing oxide coatings. The oxide coatings are found to improve the micro-hardness with the increase in the number of duty cycles, which suggests that various electrical parameters, such as duty cycle and frequency, are among the key factors controlling the structural and physical properties of the oxide coating.

• KSBB Journal
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• v.23 no.5
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• pp.369-374
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• 2008

The effects of reaction temperature and the addition of various detergents on the enantioselective hyrolysis activity of the recombinant Escherichia coli containing the epoxide hydrolase (EH) gene of Rhodotorula glutinis were investigated for the production of enantiopure styrene oxide. The recombinant E. coli harboring the EH gene from R. glutinis exhibited the enantiopreference toward (R)-styrene oxide with the maximum hydrolytic activity of $165.04{\mu}mol/min/mg$ of dry cell weight (dcw). The addition of 0.5% (w/v) Tween 20 at $10^{\circ}C$ increased the initial hydrolysis rate and enantioselectivity by 1.45-fold and 2.0-fold, respectively. Enantiopure (S)-styrene oxide was prepared with 99% ee enantiopurity and 46.0% yield (theoretical yield=50%) from 20 mM racemic styrene oxide.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.299-305
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• 2007

The effect of spray deposition of oxide particles on oxidation behaviors of as-cast Mo-14.2Si-9.6B (at%) alloys at $1200^{\circ}C$ up to for 100 hrs has been investigated. Various oxide powders are utilized to make coatings by spray deposition, including $SiO_2,\;TiO_2,\;ZrO_2,\;HfO_2$ and $La_2O_3$. It is demonstrated that the oxidation resistance of the cast Mo-Si-B alloy can be significantly improved by coating with those oxide particles. The growth of the oxide layer is reduced for the oxide particle coated Mo-Si-B alloy. Especially, for the alloy with $ZrO_2$ coating, the thickness of oxide layer becomes only one fifth of that of uncoated alloys when exposed to in air for 100 hrs. The reduction of oxide scale growth of the cast Mo-Si-B alloy due to oxide particle coatings are discussed in terms of the change of viscosity of glassy oxide phases that form during oxidation at high temperature.

• Environmental Analysis Health and Toxicology
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• v.15 no.3
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• pp.61-67
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• 2000

Toxic lesions of styrene in the Japanese Medaka (Oryzias latipes) were compared with those of styrene oxide, the active metabolite of styrene, using embryo-larval assays. The developmental stages of Japanese Medaka (Oryzias latipes) treated with both chemicals were not altered and progressed normally. However, styrene oxide was more toxic than styrene in terms of causing death and lesions . High concentrations of styrene (higher than 4.9 ppm) and styrene oxide (higher than 2.4 ppm), resulting in more than 50% mortality, caused similar lesions of cardiovascular system, craniofacial bone formation and spinal deformities, although a number of lesions were not observed by both chemicals . In the group treated with styrene, eyeball sizes and intereye distances were reduced, while, in the group treated with styrene oxide , the eyes and eye cups were not developed and two eyes were sometimes fused. In addition, styrene oxide caused the lesion which involved the posterior brain and brain stem were herniated through the spinal cord . The noticeable difference of toxic symptoms between these two chemicals was the time of onset. Toxicities of cardiovascular system and craniofacial bone formation appeared on day 3 of development in styrene oxide treated group, but, styrene treated group staned to show hemorrhages on day 3 and the craniofacial malformation were appeared on day 5, These differences between two chemicals may be due to the metabolism of styrene to styrene oxide, the reactive intermediate.

• The Journal of the Korea Contents Association
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• v.9 no.7
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• pp.211-217
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• 2009

In order to find out the radioprotective effect of algin-oligosaccharide, this study, with a mouse of which whole body irradiated by 3 Gy radiation once, measured nitric oxide. In nitric oxide test for observing the reaction of cell inflammation, nitric oxide showed decreased in the irradiation control group, while 3 day's treatment group with algin-oligosaccharide before or after irradiation indicated higher than the irradiation control group, especially showed big difference in 3 day's treatment group before irradiation (P<0.001). Consequently, this study inquired into the fact that algin-oligosaccharide with superior antioxidant activity performed radiation protection by increasing promotion of nitric oxide generation and confirmed that natural product with less chemical toxicity was able to be applied as radioprotector.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.