• 전기화학회지
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• 제14권4호
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• pp.196-200
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• 2011

본 연구에서는 니오븀 산화물을 비교적 저온에서 단시간 동안의 양극산화법을 통해 제조하였다. 이때, 전해질로는 NaF와 HF를 혼합하여 사용하였으며, 20~120 V의 다양한 전압 조건에 따라 생성되는 니오븀 산화물의 미세구조를 관찰하였다. 일반적으로 니오븀 금속의 양극산화 시 초기에 생성된 니오븀 산화물은 무정형 구조이나 반응이 경과함에 따라 점차 결정형 산화물로 성장하게 된다. 이러한 산화물은 XRD 분석을 통하여 결정형의 $Nb_2O_5$ 임을 확인하였고, FE-SEM 분석결과, 그 표면은 매우 밀집된 형태의 나노로드로 이루어진 마이크로콘 산화물임을 알 수 있었다. 적절한 공정변수로 제조된 니오븀 산화물은 마이크로콘 구조 전체 표면에 걸쳐 동일한 크기를 갖는 나노로드 다발을 형성하고 있으며, 이러한 나노 구조는 또한 넓은 표면적을 기대할 수 있어 염료감응 태양전지나 바이오 소재 등에 대한 다양한 분야에 응용될 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• 공업화학
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• 제8권5호
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• pp.830-836
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• 1997

본 실험에서는 물유리를 사용하여 산세척에 의하여 제조된 산화철 입자의 표면개질에 대하여 연구하였다. 사용한 물유리의 $SiO_2$와 $Na_2O$의 몰비($SiO_2/Na_2O$)는 1, 2, 3.5이였다. 첨가되는 실리카의 양과 pH에 따라 산화철 현탁액의 분산성을 입자의 표면하전과 침강속도에 의하여 평가하였다. 그리고, 중성 영역에서 산화철 입자의 분산안정성을 유지할 수 있는 표면개질제(실리카)의 양을 도출하였으며, 물유리에 의한 산화철 입자의 표면개질을 습식 볼밀링에 의하여 슬러리 상태에서 실시하였다. 그 결과, 표면처리한 산화철 현탁액의 분산 안정성은 실리카의 양과 pH에 상호 의존하였다. 미처리한 산화철은 등전점인 pH 8에서 분산안정성을 잃고 있었으나, 산화철에 대하여 약 0.8wt%의 실리카로 표면처리한 산화철은 pH 5 이상 중성영역에서 분산안정성을 나타내었으며, 음이온성 계면활성제를 0.2wt% 이상 첨가에 의한 분산안정성이 더욱 증가되었다.

• 한국재료학회지
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• 제2권1호
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• pp.76-82
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• 1992

$TEOS-O_3$ 산화막은 깔개층 물질에 따라 증착속도가 변하는 특성을 나타낸다. 본 논문에서는 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 이외에도 배선 밀도, 배선 간격에 따라 증착속도가 달라지는 패턴 의존성에 대하여 조사하였다. 또한 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 및 패턴 의존성을 줄이기 위해 다층 배선에서 1차 배선후에 깔개층, 즉 TEOS-base 프라즈마 산화막 및 $SiH_4-base$ 프라즈마 산화막을 증착했을 때 $TEOS-O_3$ 산화막의 증착 특성을 조사하였다. 그리고 그 깔개층 물질에 $N_2$ 프라즈마 처리를 했을 때 $TEOS-O_3$ 산화막의 증착 특성에 대해 조사하였다. 그 결과 $TEOS-O_3$ 산화막에서 기판 위에 배선 밀도와 배선 간격에 따른 의존성은 깔개층물질이 $SiH_4-base$ 일때보다 TEOS-base 프라즈마 산화막인 경우 $N_2$ 프라즈마 처리를 하면 깔개층 물질 표면이 O-Si-N화 되므로써 의존성이 사라지게 된다.

• 한국재료학회지
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• 제20권11호
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• pp.611-616
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• 2010

A cobalt oxide - tin oxide nanocomposite based gas sensor on an $SiO_2$ substrate was fabricated. Granular thin film of tin oxide was formed by a rheotaxial growth and thermal oxidation method using dc magnetron sputtering of Sn. Nano particles of cobalt oxide were spin-coated on the tin oxide. The cobalt oxide nanoparticles were synthesized by polymer-assisted deposition method, which is a simple cost-effective versatile synthesis method for various metal oxides. The thickness of the film can be controlled over a wide range of thicknesses. The composite structures thus formed were characterized in terms of morphology and gas sensing properties for reduction gas of $H_2$. The composites showed a highest response of 240% at $250^{\circ}C$ upon exposure to 4% $H_2$. This response is higher than those observed in pure $SnO_2$ (90%) and $Co_3O_4$ (70%) thin films. The improved response with the composite structure may be related to the additional formation of electrically active defects at the interfaces. The composite sensor shows a very fast response and good reproducibility.

• 한국정보통신학회논문지
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• 제20권4호
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• pp.799-804
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• 2016

본 논문에서는 비대칭 이중게이트 MOSFET의 상하단 게이트 산화막 두께에 대한 드레인 유도 장벽 감소 현상을 분석하기 위하여 전위장벽에 영향을 미치는 드레인전압에 따른 문턱전압의 변화를 관찰할 것이다. 비대칭 이중게이트 MOSFET는 상단과 하단의 게이트 산화막 두께를 다르게 제작할 수 있는 특징이 있다. 상단과 하단의 게이트 산화막 두께 변화에 따른 드레인 유도 장벽 감소 현상에 대하여 포아송방정식을 이용하여 분석하였다. 결과적으로 드레인 유도 장벽 감소 현상은 상하단 게이트 산화막 두께에 따라 큰 변화를 나타냈다. 상단과 하단 게이트 산화막 두께가 작을수록 드레인 유도 장벽은 선형적으로 감소하였다. 채널길이에 대한 드레인 유도 장벽 감소 값은 비선형적인 관계가 있었다. 고농도 채널도핑의 경우 상단 산화막 두께가 하단 산화막 두께보다 드레인 유도 장벽 감소에 더 큰 영향을 미치고 있었다.

• 한국세라믹학회지
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• 제13권1호
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• pp.25-29
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• 1976

The properties vary with quality of ferric-oxide that is major material of ferrites. In this point of view, a manufacturing method of pure and homogeneous fine ferric oxide is very important. The characters of this study are as follows: 1) Ferric oxide was made from waste pickling liquor of steel. 2) The crude ferric-oxide that is made by roasting the pickling liquor was dissolved in 20% HCI solution and then produced ferric chloride is purified by ethyl ether extraction. 3) The methanol solution of purified ferric chloride was sprayed into the refractory tube with compressed air and propane gas and then ignited leading to the ferric-oxide powder. 4) The produced oxide powder was introduced to the scrubber type vessel throught cooling system in order to collect the powder. 5) Crystalline phase of the powder was identified by X-ray diffraction and particle size, crystalline shape of the powder were investigated by settling method and electron microscope and the effects of concentration of ferric chloride in methanol on grain size were discussed. Results were obtained as fellows: 1) Total impurity in the ferric oxide produced from waste pickling liquor was 3.7%. 2) The solubilityof crude ferric oxide that was made from waste pickling liquor in HCI solution increased with the HCI concentration and reached to saturation range at 15% HCI concentration. 3) Extraction of FeCl3 increased with HCI concentration which is solvent. 4) Alpha ferric oxide obtained was very fine crystalline particles, the mean crystalline grain increased with the concentration of ferric chloride, and mean grain size distributed from 3.5$\mu$(at 0.5mole/l) to 0.5$\mu$(at 0.05mole/l).

• 대한치과마취과학회지
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• 제2권1호
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• pp.1-6
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• 2002

The usage of nitrous oxide is increased for the anxious patient to dental treatment. There are two methods to induce the sedation during dental treatment. One is sedation with drugs the other no need of drugs. We discussed here about sedation with drugs. The methods of drug administration are oral, intramuscular, intravenous, inhalation. The method of oral administration of drugs are convenient to patient and doctor but poor controllability. Intramuscular method is a parenteral technique that maintains several advantages over the enteral technique. However its pales in comparison to other parenteral technique. Intravenous method represents most effective method of ensuring predictable and adequate sedation in all patients. But it has inability to reverse the action of drugs after they have been injected except some drugs (e.g., narcotics and benzodiazepine). A variety of gaseous agents may be administered by inhalation to produce sedation. In dental practice, the inhalation administration of gas means use of nitrous oxide. There are many advantages of nitrous oxide administration. First, very short latent period and rapid onset of drug action which lead to possible titration of drug concentration. With nitrous oxide, clinical effects may become noticeable as quickly as 15 to 30 seconds after inhalation. Recovery from inhalation sedation is also quite rapid. In out patient dental practice rapid recovery is very important because it permit to discharge the patient without escort and the patient return to their ordinary life without limit. To success the conscious sedation with nitrous oxide, the administrator should be keep the mind that always titration of nitrous oxide concentration during induction and treatment. Careful observation need during treatment to prevent oversedation because the adequate nitrous oxide concentration to patients changed by environmental stress. Always begins with 100% oxygen and ends with 100% oxygen to prevent diffusion hypoxia which rare in clinical practice.

• 한국환경보건학회지
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• 제32권2호
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• pp.164-170
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• 2006

Ethylene oxide is a genotoxic carcinogen with widespread uses as industrial chemical intermediate and gaseous sterilant. 2-hydroxyethylated N-terminal valine in Hb is a good biomarker for biological monitoring of ethylene oxide exposure, because of its stability. For measuring the hemoglobin adduct formed by exposure of ethylene oxide, we studied the determination of (N-2-hydroxy-ethyl)valine(HEV) in hemoglobin adduct by using GC/MS. Firstly we synthesized HEV with 2-amino-ethanol and bromoisovaleric acid(BIVA) and confirmed it with GC/MS-FID. Its fragmentations were m/z 116(base ion, M+-45) and m/z 130(M+-31). For measuring HEV with higher sensitivity, we use derivatives which were PFPITH(pentafluorophenylisothiocianate) and TBDMS (tributyldimethylsilylation) by using Edman procedure. Its fragmentation were m/z 425(M+-57), m/z 383(M+-99) and m/z 172(M+-310) by using GC/MS. We did biological monitoring for mice inhalation exposure with 400 ppm ethylene oxide. The concentrations of hemoglobin adduct were $168{\pm}3.8\;and\;512{\pm}04$(nmol g-1 globin) at 0.5 hr/day 400 ppm ethylene oxide inhalation exposure group, and $631{\pm}17\;and\;2265{\pm}9.4$(nmol g-1 globin) at 1.0 hr/day 400 ppm ethylene oxide inhalation exposure for 1 and 4 weeks, respectively. We confirmed that (N-2-hydroxy-ethyl)valine(HEV) of hemoglobin was a good biomarker for biomonitoring of ethylene oxide exposure, and can measured with derivatives such as PFPITH(pentafluorophenylisothiocianate) and TBDMS(tributyldimethylsilylation) by using GC/MS.

• 한국재료학회지
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• 제11권4호
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• pp.329-334
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• 2001

붕산용액에서 양극산화법으로 장벽형 산화피막을 형성시킨 후 미세조직을 관찰하였다. 양극산화시 인가되는 전압에 따른 피막의 성장속도는 1.54nm/v의 직선적인 관계를 나타냈으며 300v의 인가전압에서 생성된 산화피막의 조직은 50$0^{\circ}C$에서 열처리하였을 경우 피막의 상 전이가 일어나지 않았으나 높은 인가전압에서 생성된 산화피막의 경우는 피막의 조직이 비정질에서 ${\gamma}$-alumina로 변태되는 것이 관찰되었다. 또한 피막이 전자빔 조사에 의해서도 ${\gamma}$-alumina로 전이가 일어났다.