• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.327-332
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• 1996

In this study, the effects of $WSi_x$, thickness and fluorine concentration in tungsten polycide gate structure on gate oxide were investigated. As $WSi_x$, thickness increases, gate oxide thickness increases with fluorine incorporation in gate oxide, and time-to-breakdown($T_{BD,50%}$) of oxide decreases. The stress change with $WSi_x$ thickness was also examined. But it is understood that the dominant factor to degrade gate oxide properties is not the stress but the fluorine, incorporated during $WSi_x$ deposition, diffused into $WSiO_2$ after heat treatment. In order to understand the effect of fluorine diffusion into oxidem fluorine ion implanted gates were compared. The thickness variation and $T_{BD,50%}$ of gate oxide is saturated over 600 $\AA$ thickness of $WSi_x$. The TEM and SIMS studies show the microstructure less than 600 $\AA$ thickness is dense and flat in surface. However, over 600$\AA$, the microstructure of $WSi_x$ is divided into two parts: upper porous phase with rugged surface and lower dense phase with smmoth interface. And this upper phase is transformed into oxygen rich crystalline phase after annealing, and the fluorine is captured in this layer. Therefore, the fluorine diffusion into the gate oxide is saturated.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.597-603
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• 2008

Oxide effects experiments on massive hydriding reactions of Zr alloy with hydrogen gas were carried out at $400^{\circ}C$ under 1 atm in a $H_2$ environment with a thermo-gravimetric apparatus (TGA). Experimental results for oxide effects on massive hydriding kinetics show that incubation time is not proportional to oxide thickness. The results also show that the massive hydriding kinetics of pre-filmed Zr alloys follows linear kinetic law and that the hydriding rates are similar to that of oxide-free Zr alloys once massive hydriding is initiated. Unlikely microstructure of the oxide during incubation time, physical defects such as micro-cracks and pores were observed in the oxide after incubation time. Therefore, it seems that the massive hydriding of Zr alloys can be ascribed to short circuit paths and mechanical or physical defects, such as micro-cracks and pores in the oxide, rather than to hydrogen diffusion through the oxide resulting from the increase of oxygen vacancies in the hypo-stoichiometric oxide.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.1-8
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• 1997

The contamination structure and process on SUS 316 under various exposure conditions were investigated using x-ray photoelectron spectroscopy. The metal-oxide, metal-H-oxides, CO, COH, and $C_xH_y$ are the main components of contaminants on the SUS surface. The compositional profiles of the contaminants are shown to be $C_xH_y$/CO(COH)/metal-oxide on SUS. The contamination proceeds in two steps. The oxidation of the metallic constituents followed by adsorption of hydrocarbons. Under UHV conditions the contamination is mainly due to the oxidation, and, as the exposure time increases, the oxidation continues. In HV or higher pressure, most of the oxides are formed almost immediately after exposure and as the exposure time increases the contamination of hydrocarbons continues to grow. For the SUS sample exposed to atmosphere, the metal oxide is distributed deep inside the surface with an exponentially decreasing concentration, and its thickness is nearly in the order of photoelectron mean free path. It is also seen that the Fe oxide is segregated over Cr oxide in the highly oxidized samples.

• Korean Journal of Environmental Agriculture
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• v.39 no.3
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• pp.237-245
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• 2020

BACKGROUND: The closed chamber method is the most commonly used for measuring greenhouse gas emissions from upland fields. This method has the advantages of being simple, easily available and economical. However, uncertainty estimation is essential for accurate assessment of greenhouse gas emissions and verification of emission reductions. The nitrous oxide emissions from upland field is very important for the nitrogen budget in the agriculture sectors. Although assessment of uncertainty components affecting nitrous oxide emission from upland field is necessary to take account of dispersion characteristics, research on these uncertainty components is very rare to date. This study aims at elucidation of influencing factors on measurement uncertainty of nitrous oxide concentrations measured by an automated open closed chamber method from upland field. METHODS AND RESULTS: The nitrous oxide sampling system is located in the upland field in Gyeonggi-do Agricultural Research and Extension Services (37°13'22"N, 127°02'22"E). The primary measurement uncertainty components influencing nitrous oxide concentrations (influencing factors) investigated in this research are repeatability, reproducibility and calibration in the aspects of nitrous oxide sampling and analytical instrumentation. The magnitudes of the relative standard uncertainty of each influencing factor are quantified and compared. CONCLUSION: Results of this study show what influencing factors are more important in determination of nitrous oxide concentrations measured using the automated open closed chambers located in the monitoring site. Quantifying the measurement uncertainty of the nitrous oxide concentrations in this study would contribute to improving measurement quality of nitrous oxide fluxes.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• BMB Reports
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• v.41 no.8
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• pp.604-608
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• 2008

1-Nitropyrene 4,5-oxide and 1-nitropyrene 9,10-oxide are oxidative metabolites that are responsible for the mutagenicity of 1-nitropyrene. In this study, the mutation spectra induced by oxidative metabolites in human cells were determined using a shuttle vector assay. The mutation frequencies induced by 1-nitropyrene 9,10-oxide were 2-3 times higher than those induced by 1-nitropyrene 4,5-oxide. The base substitutions induced by 1-nitropyrene 4,5-oxide were $G{\rightarrow}A$ transitions, $G{\rightarrow}C$ transversions, and $G{\rightarrow}T$ transversions. In the case of 1-nitropyrene 9,10-oxide, $G{\rightarrow}A$ transitions, $G{\rightarrow}T$ transversions, $A{\rightarrow}G$ transitions and $G{\rightarrow}C$ transversions were observed. Most base substitution mutations induced by oxidative metabolites occurred at the guanine sites in the supF gene. These sequence-specific hot spots were commonly identified as 5'-GA sequences for both metabolites. On the other hand, the sequence-specific hot spots at the adenine sites were identified as 5'-CAC sequences for 1-nitropyrene 9,10-oxide. These results suggest that the oxidative metabolites of 1-nitropyrene induce sequence-specific DNA mutations at the guanine and adenine sites at high frequency.

• Journal of Korean Society of Water and Wastewater
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• v.27 no.5
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• pp.631-639
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• 2013

The removal of phosphate from surface water is becoming increasingly vital to prevent problems such as eutrophication, particularly near urban areas. Recent requirements to reduce high concentrations of phosphate rely on physicochemical methods and adsorbents that must be effective even under strict conditions. The phosphate removal efficiencies of two adsorbents, Fe-Mn-Si oxide and Fe-Mn oxide, were investigated and the data used to compare kinetics and isotherm models. The maximum adsorption capacities of the two adsorbents were 47.8 and 35.5 mg-$PO{_4}^{3-}/g$, respectively. Adsorptions in both cases were highly pH dependent; i.e., when the pH increased from 3 to 9, the average adsorption capacities of the two adsorbents decreased approximately 32.7 % and 20.3 %, respectively. The Freundlich isotherm model fitted the adsorption of Fe-Mn-Si oxide more closely than did the Langmuir model. Additionally, anionic solutions decreased adsorption because of competition with the anions in the adsorbing phosphate. Although affected by the presence of competing anions or a humic substance, Fe-Mn-Si oxide has better adsorption capacity than Fe-Mn oxide.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• Journal of radiological science and technology
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• v.46 no.3
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• pp.187-195
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• 2023

A shield was made by mixing materials such as bismuth(Bi) and barium(Ba) with silicon to evaluate its shielding ability. Bismuth was made into a shield by mixing a bismuth oxide(Bi₂O₃) colloidal solution and a silicon base and applied to a fibrous fabric, and barium was made by mixing lead oxide(PbO) and barium sulfate(BaSO₄) with a silicon curing agent and solidifying it to make a shield. The test was conducted according to the lead equivalent test method for X-ray protective products of the Korean Industrial Standard. The experiment was conducted by increasing the shielding body one by one from the test condition of 60 kVp, 200 mA, 0.1sec and 100 kVp, 200 mA, 0.1 sec. At 60 kVp, 2 lead oxide-barium sulfate shields, 2 bismuth oxide 1.5 mm shields, and 5 bismuth oxide 0.3 mm shields showed shielding ability equal to or higher than that of lead 0.5 mm. At 100 kVp, 2 lead oxide-barium sulfate shields and 2 bismuth oxide 1.5 mm shields showed shielding ability equal to or higher than that of lead 0.5 mm. It was confirmed that when using 2 pieces of lead oxide-barium sulfate and 1.5 mm of bismuth oxide, respectively, it has shielding ability equivalent to that of lead. Bismuth oxide and lead oxide-barium sulfate are lightweight and have excellent shielding ability, thus they have excellent properties to be used as an apron for radiation protection or other shielding materials.