• Applied Chemistry for Engineering
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• v.32 no.4
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• pp.385-392
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• 2021

In this study, impact of Co proportion and calcination temperature of ceria on the Co/CeO₂ was analyzed by comparing nitrogen monoxide oxidation performance of various catalysts and their physico-chemical properties. The structural properties of each catalyst were studied by XRD and BET analysis, and the surface crystal states of cobalt were proposed according to the surface density. Oxidation states of elements were observed through Raman and XPS analysis, and the relationship between typical oxidation states and nitrogen monoxide oxidation performance was designed. Through H₂-TPR, oxygen-transferring capacity due to changes in the characteristics of catalysts were identified, and activation sites (Co³⁺) for oxidation were suggested.

• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.324-330
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• 1996

We examined the formal oxidation states of Pb and Cu in the Pb2CuO4 slab of Pb2Sr2ACu3O8(A=Y1-xCaxor Nd1-xSrx) and their possible changes by oxygen incorporation in the Cu layer of the slab by performing tight-binding band electronic structure calculations on the Pb2CuO4+δ slab. Our results show that the most likely oxidation state of Pb is +2 and that of Cu is +1 for the Pb2CuO4 slab prior to oxidation. With small δ values, the oxygen incorporation occurs by the formation of such chain fragments as in YBa2Cu3O7-y along the a+b axis. The four-coordinate Cu atoms in the chain fragments are in the +3 oxidation states. For values of δ larger than 0.5, however, an additional oxygen (Oad) goes to the site along the b axis to form short Pb-Oad distances oxidizing Pb2+ to Pb4+. This change in the Pb oxidation state leads to the suppression of superconductivity due to the decrease of holes in the CuO2 layer.

• Journal of Environmental Science International
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• v.30 no.12
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• pp.1005-1014
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• 2021

Organic contaminants can be released into water environments due to chemical accidents and exist as dissolved and non-aqueous phase liquids (NAPL). Fenton oxidation was tested for bisphenol A and nitrobenzene as model organic contaminants in dissolved and NAPL states. Fenton oxidation was successfully applied for both of the dissolved and NAPL states of the two pollutants and the results indicated that a quick treatment was needed to reduce the risk from a chemical accidents instead of carrying out oxidation after the contaminants dissolve in water. A set of Fenton reactions were tested under seawater conditions because chemical accidents often occurs in the ocean. Chloride ions act as radical scavengers and inhibit Fenton oxidation. The reaction rate is inversely proportional to salt contents and the reduced reaction rate can be compensated by increasing the quantity of the oxidizing agents. The current study showes that Fenton oxidation could be applied as a quick treatments for organic contaminant in dissolved and NAPL state organic contaminants released as a result of leaks or chemical accidents.

• Journal of the Korean Chemical Society
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• v.42 no.1
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• pp.135-140
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• 1998

High oxygen pressures appear an important tool in Solid State Chemistry. Two main routes can be developed: (i) the stabilization of thermally unstable oxides, used as precursors, in order to open the synthesis of new materials, (ii) the stabilization of the highest oxidation states of transition metals. This paper is essentially devoted to this second research axis. The methodology developed for preparing new oxides containing Fe(Ⅴ), Ir(Ⅵ), high spin Fe(Ⅳ) and Cu(Ⅲ) is described.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.125.2-125.2
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• 2015

The evolution of oxidation states of vanadium is monitored with ambient pressure X-ray photoemission spectroscopy. As the pressure of oxygen gas and surface temperature change, the formations of various oxidation states of vanadium are observed on the surface. Under 100mTorr of the oxygen gas pressure and 523K of sample temperature, VO2 and V2O5 are formed on the surface. The temperature-dependent resistance measurement on grown sample shows a clear metal-insulator transition near 350K. In addition, the measurement of Raman spectroscopy displays the structural change from monoclinic to rutile structures across the phase transition temperature.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• Nuclear Engineering and Technology
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• v.32 no.5
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• pp.514-520
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• 2000

The mechanism of corrosion behavior has to be understood clearly to select an optimum material for handling molten salts to be used in the oxide reduction process of PWR spent fuel. In this study, the oxidation states of corrosion products on the surface of Inconel 600 and 800H as well as their chemical compositions and structural informations were determined by using XPS, ICP-AES, AAS, EPMA and XRD after the corrosion experiment with lithium molten salts at 75$0^{\circ}C$ for 25 hours. Nickel and oxygen were detected from the corrosion products on the surface of Inconel plates and chromium was found to be dissolved out into lithium molten salts leaving cracks on the surface. The corrosion products were identified as metal oxides such as Fe$_2$O$_3$, Cr$_2$O$_3$, NiO, NiFe$_2$O$_4$and MnO by using XPS and XRD.

• Bulletin of the Korean Chemical Society
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• v.17 no.9
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• pp.820-826
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• 1996

The p2H dependence of the NMR chemical shifts of the proton signals of heme methyl groups and ionizable groups in the vicinity of the heme were investigated. The p2H titration of heme methyl signals in four macroscopic oxidation states by saturation tranfer method was performed in the range between p2H 5.2 and 9.0. While the p2H dependence of the heme methyl resonance in fully oxidized state was small, most resonances in the intermediate oxidation states showed certain shifts. Particularly, methyl resonances of heme 1 (sequential heme numbering) exhibited sharp p2H dependence in acidic range. β-CH2 of the propionate of hemes 1 and 4 were titrated in the range of p2H 4.5-9.0. Only the 6-propionate group of heme 1 was protonated in this p2H range and its titration curve was similar to those of methyl resonances of heme 1 in intermediate oxidation states. Analysis of the microscopic redox potentials showed that they change depending on p2H. The ionizable groups responsible for the p2H dependence of these potentials are 6-propionate of heme 1 in acidic range and His 67 in basic range.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.1-62
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• 2003

Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.