• Korean Journal of Fisheries and Aquatic Sciences
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• v.34 no.4
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• pp.309-314
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• 2001

In order to promote the consumption of small red muscle fish, such as saury, sardine, herring, etc., a new conditioning technique to soften backbone and small bones was investigated by using kimchi seasoning ingredients and organic acids. In the conditioning process, various chemical changes were examined during 60 days at 15 days intervals, The decrease of moisture content and the increase of salt concentration in seasoned fish meat were good correlated respectively. In the dry salt conditioning, the moisture content was more rapidly decreased than wet salt conditioning. The pH of fish meat during conditioning were more slowly decreased in dry salting than in wet salting. The VBN contents were suppressed under 30 mg/100 g in dry salt conditioning during 60 days at $5^{\circ}C$. The addition of rice bran in dry salting was effective on retarding lipid oxidation because the TBA value was most effectively retarded.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Journal of the Korean Chemical Society
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• v.31 no.3
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• pp.250-257
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• 1987

The electrical conductances for the thorium (IV) complexes with crown ethers have been measured in DMSO, and water solvents, and the oxidation-reduction reaction mechanisms, electron number and diffusion coefficients in the reversible reduction process have been examined by polarography and cyclic voltammography. The dissociation mole ratio of $Th^{4+}$ and nitrate ion are 1:1 and in aprotic solvent, and 1:4 in protic solvent like as water. The limiting molar conductances of all complexes in aprotic solvent have been found to be in the range of $92.2{\times}159$ $ohm^{-1}cm^2mol^{-1}$. In aprotic solvent, DMSO, the reduction of each complex is reversible by one electron reduction of one step, and the range of diffusion coefficients is obserbed to be $5.83\;10^{-6}{\sim}6.90{\times}10^{-6}$. The complexes which have reduction step were hydrolyzed above at 1.8volt with reference saturated calomel electrode, generating the hydrogen gas. The reaction mechanisms of thorium (IV)-crown ether complexes appear as follows. ${Th_m(IV)L_n(H_2O)_x(NO_3)_{4y}}_=^{DMSO} {\overline{{Th_m(IV)L_n(H_2O)_x(NO_3)_{4y-1}}}^+ + NO_3-$

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.133-137
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• 2014

As a preceding process for preparing several micrometer sized Ag-coated Cu flakes, ball milling of submicrometer-sized Cu particles synthesized through a wet chemical method was performed in order to convert the particles into flakes. To suppress oxidation and aggregation of the particles during ball milling, ethylene glycol and ethyl acetate were used as a medium and a surface modifying agent, respectively. Results obtained with different rotation speeds of a jar indicated that the rotation speed changes a rotating mode, and strikingly alters the final shapes and shape uniformity of Cu particles after milling. The diameter of zirconia ball was also confirmed. Although there was aggregates in the initial submicrometer-sized Cu particles, therefore, well-dispersed Cu flakes with a size of several micrometers were successfully prepared by ball milling through optimization of rotation speed, amount of ethyl acetate, and diameter of zirconia ball.

• Animal cells and systems
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• v.9 no.2
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• pp.79-85
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• 2005

Oxidized abasic residues arise as a major class of DNA damage by a variety of agents involving free radical attack and oxidation of deoxyribose sugar components. 2-deoxyribonolactone (dL) is a C1'-oxidized abasic lesion implicated in DNA strand scission, mutagenesis, and covalent DNA-protein cross-link (DPC). We show here that mammalian cell-free extract give rise to stable DPC formation that is specifically mediated by dL residue. When a duplex DNA containing dL at the site-specific position was incubated with cell-free extracts of Po ${\beta}-proficient$ and -deficient mouse embryonic fibroblast cells, the formation of major dL-mediated DPC was dependent on the presence of DNA polymerase (Pol) ${\beta}$. Formation of dL-specific DPC was also observed with histones and FEN1 nuclease, although the reactivity in forming dL-mediated DPC was significantly higher with Pol ${\beta}$ than with histones or FEN1. DNA repair assay with a defined DPC revealed that the dL lesion once cross-linked with Pol ${\beta}$ was resistant to nucleotide excision repair activity of cell-free extract. Analysis of nucleotide excision repair utilizing a model DNA substrate containing a (6-4) photoproduct suggested that excision process for DPC was inhibited because of DNA single-strand incision at 5' of the lesion. Consequently DPC mediated by dL lesion may not be readily repaired by DNA excision repair pathway but instead function as unusual DNA damage causing a prolonged DNA strand break and trapping of the major base excision repair enzyme.

• The Korean Journal of Zoology
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• v.12 no.2
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• pp.60-66
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• 1969

Changes in the protein concentration in the hemolymph and the oxidation of respiratory substrates at various developmental stages in cabbage worm, Pieris rapae Linne were measured using Biuret method and Warburg manometric method, respectively. The results are summarized as follows: 1. The hemolymph protein contentration decreased gradually until the six-day pupa and increased thereafter. In the fifth larval instar the concentration reached a maximum and was about two times the value for the six-day pupa. 2. Endogenous respiration was very high at the prepupal stage, decreasing at two-day pupa, followed by an increase at the late pupal stage. 3. Glucose showed the marked activity throughout the whole stages, and had the striking influence on both the prepupal and adult stages. 4. The changes in protein concentration and the rate of oxygen consumption exhibited a general pattern of U-shaped curve through the process of life cycle according to histogenesis of the adult organ and histolysis of the larval organ.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1641-1647
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• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.508-508
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• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.360-367
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• 1996

The OISF (Oxidation Induced Stacking Fault)is expected to affect the electrical properties in Si single crystals, and the nuclei of OISF are believed to be formed during the crystal growing process. Initial oxygen concentration, dopant type and its density, and cooling rate are regareded as major factors on OISF formation. In this study, the variations of OISF density under various cooling rate were investigated. Si single crystal was heated to $1400^{\circ}C$ in Ar ambient and cooled down to room temperature at different cooling rate, using horizontal tube furnace. After that, they were oxidized at $1150^{\circ}C$, and then, OISF was observed with optical microscope. The relation between oxide procipitates and OISF nucleation was investigated by FTIR analysis. As a result, it was found that there exists the intermediate cooling rate range in which OISF nucleation is highly enhanced. And also, it was found that OISF nucleation is closely related with silicon oxide procipitation in Si single crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current