• Journal of Powder Materials
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• v.19 no.3
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• pp.196-203
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• 2012

$TiO_2$ was successfully formed on a Ti specimen by MAO (Micro-Arc-Oxidation) method treated in $Na_3PO_4$ electrolyte. This study deals with the influence of voltage and working time on the change of surface microstructure and phase composition. Voltage affected the forming rate of the oxidized layer and surface microstructure where, a low voltage led to a high surface roughness, more holes and a thin oxidized layer. On the other hand, a high voltage led to more dense surface structure, wider surface holes, a thick layer and fewer holes. Higher voltage increases photocatalytic activity because of better crystallization of the oxidized layer and good phase composition with anatase and rutile $TiO_2$, which is able to effectively separate excited electrons and holes at the surface.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.333-342
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• 1995

Stainless steels are widely selected as commercial engineering materials mainly because of their excellent corrosion resistance, oxidation resistance and strength. Because the manufacturing temperature of stainless steels is relatively high, the chemical and physical properties of the oxide film which was formed on the stainless steels are of importance in determining the rate of oxidation and the life of equipment exposed to high temperature oxidizing environments. In this study, the oxidation behavior of S. S. 304 and S. S. 430 added by a small amount of oxygen active elements(each +0.5wt% Hf and Y) was studied to improve oxidation resistance. The results of cyclic and isothermal oxidation on S. S. 304 added by OAE showed relatively poor oxidation resistance due to spallations and cracks of $Cr_2O_3$ layer. But all S. S. 430+0.5wt% OAE maintained constant oxidation rates and stable oxide layers at high temperature environment. Especially S. S. 430+0.5wt% Y formed a $Cr_2O_3$ oxide layer and improved cyclic oxidation resistance preventing loss of protective layers about 1000 hours at $1000^{\circ}C$

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.498-503
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• 2018

Using the thermal ablation method, the oxidation behavior of $SiC_f/SiC$ composites was investigated in air and in the temperature range of $1,300^{\circ}C$ to $2,000^{\circ}C$. At the relatively low temperature of $1,300^{\circ}C$, passive oxidation, which formed amorphous phase, predominantly occurred in the thermal ablation test. When the oxidation temperature increased, SiO (g) and CO (g) were formed by active oxidation and the dense oxide layer changed to a porous one by vaporization of gas phases. In the higher temperature oxidation test, both active oxidation due to $SiO_2$ decomposition on the surface of the oxide layer and active/passive oxidation transition due to interfacial reaction between oxide and base materials such as SiC fiber and matrix phase simultaneously occurred. This was another cause of high temperature degradation of $SiC_f/SiC$ composites.

• Journal of Korea Foundry Society
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• v.25 no.6
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• pp.226-232
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• 2005

Contact material is widely used in the field of electrical parts. Ag-CdO material has a good wear resistance and stable contact resistance. In order to establish optimizing heat treatment condition, rolling temperature and oxidation process, we studied the microstructure of Ag-CdO material with various conditions. The experimental procedure were melting using high frequency induction, heat treatment, rolling and internal oxidation. And we experimented on difference process, Post-oxidaion. In this study, we obtained the optimizing heat treatment condition was $700^{\circ}C$ for 15 min. and the optimizing rolling temperature was $730^{\circ}C$. In investigation of the microstructure of oxidized material, coarse oxide and depleted oxidation layer existed. The hardness was average Hv 70. When we used Post-oxidation, oxides were finer than prior process and depleted oxidation layer did not exist. The hardness of Post-oxidation material was average Hv 80. And the optimizing rolling temperature was $800^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.111.2-111.2
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1080-1086
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• 2005

We have studied the Ge redistribution after dry oxidation and the oxide growth rate of $Si_{1-x}Ge_x$ epitaxial layer. Oxidation were performed at 700, 800, 900, and $1,000\;^{\circ}C$. After the oxidation, the results of RBS (Rutherford Back Scattering) & AES(Auger Electron Spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $Si_{1-x}Ge_x$ interface. It is shown that the presence of Ge at the $Si_{1-x}Ge_x$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700 and 800$^{\circ}C$, while it was decreased at both 900 and $1,000^{\circ}C$ as the Ge mole fraction was increased. The dry of idation rates were reduced for heavy Ge concentration, and large oxiidation time. In the parabolic growth region of $Si_{1-x}Ge_x$ oxidation, the parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the $1,000^{\circ}C$, AES showed that Ge peak distribution at the $Si_{1-x}Ge_x$ interface reduced by interdiffusion of silicon and germanium.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.5-5
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• 1999

A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.151-157
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• 2014

The degradation mechanisms of thermal barrier coatings (TBCs) were investigated in different thermal fatigue condition in terms of microstructural analyses. The isothermal and cyclic oxidation tests were conducted to atmospheric plasma sprayed-TBCs on NIMONIC 263 substrates. The delamination occurred by the oxide layer formation at the interface, the Ni/Cr-based oxide was formed after Al-based oxide layer grew up to ${\sim}10{\mu}m$ in the isothermal condition. In the cyclic oxidation with dwell time, the failure occurred earlier (500 hr) than in the isothermal oxidation (900 hr) at same temperature. The thickness of Al-based oxide layer of the delaminated specimen in the cyclic condition was ${\sim}4{\mu}m$ and the interfacial cracks were observed. The acoustic emission method revealed that the cracks generated during the cooling step. It was considered that the specimens were prevented from the formation of the Al-based oxide by cooling treatment, and the degradation mode in the cyclic test was dominantly interfacial cracking by the difference of thermal expansion coefficients of the coating layers.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.76.2-76.2
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• 2010

질산 용액을 이용한 처리를 통해서 실리콘 웨이퍼 위에 누설 전류가 thermal oxidation 방법과 비슷한 수준의 얇은 실리콘 산화막을 형성할 수 있다. 이러한 처리 방법은 thermal oxidation에 비해서 낮은 온도에서 공정이 가능하다는 장점을 가진다. 이 때 질산 용액으로 68 wt% $HNO_3$을 쓰는데, 이 용액에만 넣었을 때에는 실리콘 산화막이 어느 정도 두께 이상은 성장하지 않는 단점이 있다. 그렇기 때문에 실리콘 웨이퍼를 68 wt% $HNO_3$에 넣기 전에 seed layer 산화막을 형성 시킨다. 본 연구에서는 p-type 웨이퍼를 phosphorus로 도핑해서 에미터를 형성 시킨 후에 seed layer를 형성 시키고 68 wt% $HNO_3$를 이용해서 에미터 위의 실리콘 산화막을 성장 시켰다. 이 때 보다 더 효과적인 seed layer를 형성 시키는 용액을 찾아서 실험하였다. 40 wt% $HNO_3$, $H_2SO_4-H_2O_2$, HCl-$H_2O_2$ 용액에 웨이퍼를 10분 동안 담그는 것을 통해서 seed layer를 형성하고, 이를 $121^{\circ}C$인 68 wt% $HNO_3$에 넣어서 실리콘 산화막을 성장시켰다. 이렇게 형성된 실리콘 산화막의 특성은 엘립소미터, I-V 측정 장치, QSSPC를 통해서 알아보았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.