• 제목/요약/키워드: over-oxidation

검색결과 763건 처리시간 0.029초

알루미나에 담지한 백금 촉매상에서 휘발성 유기화합물 톨루엔 및 톨루엔+자일렌의 저온산화 (Catalytic Deep Oxidation of Volatile Organic Compounds Toluene and Toluene+Xylene over γPt/γ-Al2O3 Catalysts at Lower Temperatures)

  • 김상환;강태성;양희성;브트린뉴이;박형상
    • 한국대기환경학회지
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    • 제22권6호
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    • pp.799-807
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    • 2006
  • The catalytic activity of $Pt/{\gamma}-Al_2O_3$ catalysts for the oxidation of toluene and toluene+xylene mixture was investigated in the microreactor of fixed-bed type. The calcination temperatures and loadings of $Pt/{\gamma}-Al_2O_3$ catalysts played the important role in the activity of catalysts for the oxidation of toluene. The increasing calcination temperatures and loadings of $Pt/{\gamma}-Al_2O_3$ catalysts increased the crystallite size of the platinum to result in the higher oxidation activity of catalysts. The catalytic activity for the toluene oxidation over $Pt/{\gamma}-Al_2O_3$ catalysts turned out to be increasing in the order of $500^{\circ}C\;<\;800^{\circ}C<600^{\circ}C\;<\;700^{\circ}C$ for calcination temperatures and 0.1 wt% < 0.3 wt% < 1.0 wt% for platinum loadings, respectively. The 1.0 wt% $Pt/{\gamma}-Al_2O_3$ catalysts calcined at $700^{\circ}C$ for 3 hrs in the air showed the highest activity for the oxidation of the toluene. The decrease of oxidation activity of $Pt/{\gamma}-Al_2O_3$ catalysts calcined at $800^{\circ}C$ might result from the decrease of active sites by sintering of platinum metals as well as ${\gamma}-Al_2O_3$ supports. The 1.0wt% $Pt/{\gamma}-Al_2O_3$ catalyst showed the activity from the lower temperature at $120^{\circ}C$, reached the light-off temperature ($T_{50%}$) at $180^{\circ}C$, and leveled off its activity at $340^{\circ}C$ with the conversion of 100% 'Mutual promotion' effects were observed for the binary mixture of toluene and xylene. The activity of the easy-to-oxidize toluene was slightly increased with the existence of the xylene. It might suggest the different mechanism for the oxidation of toluene and xylene on the $Pt/{\gamma}-Al_2O_3$ catalysts on different sites, and its reaction of gaseous oxygen.

급속응고한 Ag-Sn-In 합금의 산화반응에 미치는 Sn-In 첨가량 비율에 관한 연구 (The Study of the Sn-In Ratio on the Oxidation Reaction of Rapidly Solidified Ag-Sn-In Alloys)

  • 장대정;권기봉;조대형;김정수;남태운
    • 한국주조공학회지
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    • 제27권2호
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    • pp.72-76
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    • 2007
  • Contact materials are widely used as electrical parts. Ag-Cd alloy has a good wear resistance and stable contact resistance. But the Cd exists as coarse oxide in alloy so it have an effect on mechanical properties badly. Moreover, the Cd is an injury material to environment. Nowadays, the use of Cd is strictly restricted. Because of these disadvantage, Ag-Sn-In alloy has been developed. In Ag-Sn-In alloy, the Sn : In ratio affects the internal oxidation properties, such as the formation of the oxide layer on the surface. In this work, we changed and optimized the Sn : In ratio variety for good internal oxidation properties. We have shown that a internal oxidation process did not fully completed when the Sn : In ratio is over 4 : 1 because of the Sn oxide layer at surface. The increase of In decelerates the formation of Sn oxide layer.

황 농도에 따른 Acidithiobacillus thiooxidans의 생장 특성 (Growth Characteristics of Acidithiobacillus thiooxidans in Different Sulfur Concentrations)

  • 이은영;조경숙;류희욱
    • 한국미생물·생명공학회지
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    • 제34권4호
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    • pp.338-341
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    • 2006
  • The growth characteristics of sulfur-oxidizing bacteria, Acidithiobacillus thiooxidans AZ11, MET, and TAS were investigated in mineral salt media supplemented with elemental sulfur of 1$\sim$50 g $L^{-1}$. The sulfur oxidation rates of A. thiooxidans. MET and TAS increased highly with increasing sulfur concentration up to 10 g L$^{-1}$, but the rates increased slowly in sulfur concentration over 10 g L$^{-1}$. A. thiooxidans AZ11 showed the parallel increase of sulfur oxidation rate until sulfur concentration increased up to 40 g L$^{-1}$. The maximum sulfur oxidation rates (V$_{max}$) of AZl1, MET and TAS were 1.88, 1.38 and 0.43 g S L$^{-1}$ d$^{-1}$, respectively. The maximum specific growth rates (${\mu}_{max}$) of AZ11, MET, and TAS were 0.33 d$^{-1}$, 0.30 d$^{-1}$ and 0.45 d$^{-1}$, respectively. Although MET and TAS couldn't grow at sulfate concentration of 40 g L$^{-1}$, AZ11 could grow in the presence of 58 g L$^{-1}$ sulfate, the final oxidation product of elemental sulfur.

비 지질 산화손상에 대한 어성초 뿌리의 항산화 효과 (Antioxidative effects of Houttuynia cordata root on non-lipid oxidative damage)

  • 하대식;김충희;김의경;강정부;김종수
    • 대한수의학회지
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    • 제47권1호
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    • pp.25-32
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    • 2007
  • Houttuynia cordata root on non-lipid oxidative damage. The antioxidative efects of methanolic (MeOH) extract of Houttuynia cordata rooton non-lipid, including liposome oxidation, oxidation of deoxyribose, protein oxidation, chelating, scavenging,and 2'-deoxyguanosine (2'dG) oxidation were investigated. Houttuynia cordata root exhibited highantioxidative effect in a liposome model system. The inhibitory effect of MeOH extract on deoxyribosedamage exhibited antioxidative effect and it afforded considerable protection against damage to deoxyribose.In addition, MeOH extract at over 300extracts exhibited metal binding ability for hydrogen peroxide. Furthermore, the oxidation of 2'dG to 8-hydroxy-2-deoxyguanosine was inhibited by MeOH extracts, and scavenging activity for hydroxyl radicalexhibited a remarkable effect. The present results on biological model systems showed that MeOH extractswas effective in the protection of non-lipids against various oxidative model systems.

고압 수증기 내에서 산화막 형성에 관한 연구 (Oxide Layer Growth in High-Pressure Steam Oxidation)

  • 박경희;안순의;구경완;왕진석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.735-738
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    • 2000
  • This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

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산화질소 첨가에 의한 오존 기반 탄소입자상물질 촉매연소반응 속도의 개선 (The addition of nitrogen oxides for improving the rate of catalytic ozone-induced oxidation of soot)

  • 이남훈;박태욱;이진수;이대원
    • 산업기술연구
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    • 제39권1호
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    • pp.1-5
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    • 2019
  • In this study, we examined the effect of NO addition on the ozone-induced soot oxidation activity of $LaMnO_3$ perovskite catalysts. The addition of 10~20% NO ($NO_2$) with respect to the concentration of ozone effectively enhanced the rate of ozone-induced soot oxidation rate over $LaMnO_3$. However, the excessive addition of NO ($NO_2$) was detrimental to ozone-induced soot oxidation activity. It is supposed nitrogen oxides would adsorb on the catalyst and then react with carbon-oxygen species developed on soot surface, but an excessive addition of nitrogen oxide would inhibit the formation of carbon-oxygen species, which is a key intermediate in the reaction, and consequently suppress the oxidation rate of soot.

스핀-온-글라스 박막의 제조와 분석 (Preparation and Analysis of the SOG Films)

  • 임경란;최두진;박선진
    • 한국세라믹학회지
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    • 제29권11호
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    • pp.863-869
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    • 1992
  • A SOG(spin glass) solution with excellent wetting to Si wafers was prepared by acid-hydrolysis of Si(OEt)4 and Me2Si(OEt)2. The solution was spin coated on Si wafers, and effects of heat treatment of the film were characterized by TG/DTA, FTIR and Ellipsometry. Silica film was obtained by heat treatment at $600^{\circ}C$ within one hour, but heat treatment at 80$0^{\circ}C$ caused interfacial oxidation of the silicon substrate. Unexpectedly silica films with much better adhesion were obtained by curing at $600^{\circ}C$ for over 30 min. than those obtained by thermal oxidation.

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SiC의 산화반응 기구 (Oxidation Mechanism of SiC)

  • 최태운;이홍림
    • 한국세라믹학회지
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    • 제18권2호
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    • pp.79-82
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    • 1981
  • SiC powder was heated in air over the temperature range of 1100-135$0^{\circ}C$. $\beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $\beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $\beta$-cristobalite layer was obtained as the following equation: $D=3.84{\times}10^{-17}$exp(-14.7/RT)

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Effect of TaB2 Addition on the Oxidation Behaviors of ZrB2-SiC Based Ultra-High Temperature Ceramics

  • Lee, Seung-Jun;Kim, Do-Kyung
    • 한국재료학회지
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    • 제20권4호
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    • pp.217-222
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    • 2010
  • Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.