• Title/Summary/Keyword: orthorhombic phase

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Dielectric and Field-induced Strain Behaviors due to Excess PbO in Lead Yttrium Zirconate Stannate Titanate Ceramics (과잉 PbO에 의한 (Pb,Y) $(Zr,Sn,Ti)O_3$세라믹스의 유전 및 전기장유기변형 특성)

  • Yun, Gi-Hyeon;Kim, Jeong-Hui;Gang, Dong-Heon
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.34-40
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    • 2000
  • The $Pb_{0.94}Y_{0.04}[(Zr_{0.6}Sn_{0.4})_{0.915}Ti_{0.085}]O_3$ ceramics which corresponded to the antiferroelectric-ferroelectric phase boundary composition were prepared for digital-type-piezoelectric/electrostrictive device application. Their dielectric, field-induced polarization (P) and strain (X) behaviors were studied with variations in sintering condition and excess PbO content. The orthorhombic structure of specimens was hardly affected either by excess PbO addition or sintering temperature. With increasing excess PbO content, grains tended to be smaller and rounded ones, and the optimum sintering temperature was lowered. Excess PbO addition stabilized the antiferroelectric phase of the specimen effectively, which was confirmed by P-E and X-E analyses. Also the digital-type-strain character was found to be enhanced despite of slight increase in phase transition (AFE-FE) field and electrical resistivity, and decrease in maximum strain. These results were explained in terms of possible lattice defects and domain wall motion.

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Phase Formation and Electrical Conductivity of Ba-Doped LaBaGaO4 Layered Perovskite (Ba 첨가 LaBaGaO4 층상 Perovskite의 생성상과 전기전도도)

  • Lee, Kyu-Hyoung;Kim, Jong-Hwa;Kim, Hye-Lim;Kim, Shin;Lee, Hong-Lim
    • Journal of the Korean Ceramic Society
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    • v.41 no.8
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    • pp.623-627
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    • 2004
  • Phase formation and electrical conduction behavior of Ba-doped LaBaGa $O_4$ layered perovskite were studied. Orthorhombic single phase of $K_2$Ni $F_4$-type structure was observed for the composition range of 0$\leq$x$\leq$0.2 in the La$\_$1+x/Ba$\_$1+x/Ga $O_4$$\_$4-$\delta$/ system by X-ray analysis. In the dry atmosphere, La$\_$0.8/Ba$\_$1.2/Ga$\_$3.9/ exhibited mixed conduction of oxygen ion and hole (p-type) at high p( $O_2$). However, in water vapor containing atmosphere, it showed proton conduction due to the incorporation of water into oxygen vacancies. As the temperature decreased, the contribution of proton conductivity to the total conduction increased and proton conduction was dominant below 350$^{\circ}C$. The activation energy for proton conduction was calculated as 0.72 eV.

Characteristics of $TiH_2$ under High Pressure (고압하에서 $TiH_2$의 특성화 연구)

  • Kim, Young-Ho
    • Journal of the Mineralogical Society of Korea
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    • v.5 no.2
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    • pp.72-78
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    • 1992
  • The Earth outer core accomodates moderately considerable amount of lighter elements than pure iron itself. Hydrogen is one of the possible candidates of minor constituents in the outer core. It would be worth while to extend for the pressure effect on the solubility of hydrogen in the metal-hydrides including iron hydride. In view of hydrogen being one of the potential substitutes for petroleum, searching a more efficient way for storing hydrogen in the form of hydrides is of considerable value. For two purposes, $TiH_2$was selected among lot of hydrides for its characteristics under pressure and temperature. There have been two kinds of experiment carried out on $TiH_2$ under different experimental conditions. As one of these attempts, polycrystalline $TiH_2$ was loaded up to 15 GPa stepwise at the constant temperature 500${\circ}$ using a piston-cylinder diamond anvil cell equipped with a miniature furnace of an electric power supply. The X-ra diffraction technique was employed on the quenched samples after the simultaneous high pressure and temperature treatments. During these high pressure-temperature runs, and irreversible phase of $TiH_2$ has been observed at the pressures higher than 11.3 GPa, which would be assigned to the orthorhombic crystal system as one of the new phase(s) of $TiH_2$. Molar volume change on this phase transition is ∼10%.

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Fabrication of Stack-Structured Gas Sensor of LaCrxCo1-xO3/Li1.3Al0.3Ti1.7(PO4)3 and Its NOx Sensing Properties (LaCrxCo1-xO3/Li1.3Al0.3Ti1.7(PO4)3의 적층구조를 가지는 가스센서 제조와 그의 NOx 검지특성)

  • Lee, Young-Sung;Shimizu, Y.;Song, Jeong-Hwan
    • Korean Journal of Materials Research
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    • v.25 no.8
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    • pp.423-428
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    • 2015
  • Impedancemetric $NO_x$ (NO and $NO_2$) gas sensors were designed with a stacked-layer structure and fabricated using $LaCr_xCo_{1-x}O_3$ (x = 0, 0.2, 0.5, 0.8 and 1) as the receptor material and $Li_{1.3}Al_{0.3}Ti_{1.7}(PO_4)_3$ plates as the solid-electrolyte transducer material. The $LaCr_xCo_{1-x}O_3$ layers were prepared with a polymeric precursor method that used ethylene glycol as the solvent, acetyl acetone as the chelating agent, and polyvinylpyrrolidone as the polymer additive. The effects of the Co concentration on the structural, morphological, and $NO_x$ sensing properties of the $LaCr_xCo_{1-x}O_3$ powders were investigated with powder X-ray diffraction, field emission scanning electron microscopy, and its response to 20~250 ppm of $NO_x$ at $400^{\circ}C$ (for 1 kHz and 0.5 V), respectively. When the as-prepared precursors were calcined at $700^{\circ}C$, only a single phase was detected, which corresponded to a perovskite-type structure. The XRD results showed that as the Co concentration of the $LaCr_xCo_{1-x}O_3$powders increased, the crystal structure was transformed from an orthorhombic phase to a rhombohedral phase. Moreover, the $LaCr_xCo_{1-x}O_3$ powders with $0{\leq}x<0.8$ had a rhombohedral symmetry. The size of the particles in the $LaCr_xCo_{1-x}O_3$powders increased from 0.1 to $0.5{\mu}m$ as the Co concentration increased. The sensing performance of the stack-structured $LaCr_xCo_{1-x}O_3/Li_{1.3}Al_{0.3}Ti_{1.7}(PO_4)_3$ sensors was found to divide the impedance component between the resistance and capacitance. The response of these sensors to NO gas was more sensitive than that to $NO_2$ gas. Compared to other impedancemetric sensors, the $LaCr_{0.8}Co_{0.2}O_3/Li_{1.3}Al_{0.3}Ti_{1.7}(PO_4)_3$ sensor exhibited good reversibility and reliable sensingresponse properties for $NO_x$ gases.

Strain induced/enhanced ferromagnetism in $Mn_3Ge_2$thinfilms

  • Dung, Dang Duc;Feng, Wuwei;Thiet, Duong Van;Sin, Yu-Ri-Mi;Jo, Seong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.135-135
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    • 2010
  • In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

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Effects of Doping Elements and the Amounts of Oxygen/Nitrogen Contents in Final Nitrides on the Characteristics of Red Pigment of Tantalum Nitrides (Ta3N5) (적색 안료인 탄탈륨 질화물(Ta3N5)의 특성에 도핑 물질 및 최종질화물의 산소/질소 함량이 미치는 영향)

  • Park, Eun-Young;Pee, Jae-Hwan;Kim, Yoo-Jin;Cho, Woo-Seok;Kim, Kyeong-Ja
    • Journal of Powder Materials
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    • v.16 no.6
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    • pp.396-402
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    • 2009
  • Tantalum nitrides ($Ta_3N_5$) have been developed to substitute the Cd based pigments for non-toxic red pigment. Various doping elements were doped to reduce the amount of high price Tantalum element used and preserve the red color tonality. Doping elements were added in the synthesizing process of precursor of amorphous tantalum oxides and then Tantalum nitrides doped with various elements were obtained by ammonolysis process. The average particle size of final nitrides with secondary phases was larger than the nitride without the secondary phases. Also secondary phases reduced the red color tonality of final products. On the other hand, final nitrides without secondary phase had orthorhombic crystal system and presented good red color. In other words, in the case of nitrides without secondary phases, doping elements made a solid solution of tantalum nitride. In this context, doping process controlled the ionic state of nitrides and the amount of oxygen/nitrogen in final nitrides affected the color tonality.

Low Temperature Nanopowder Processing for Flexible CIGS Solar Cells (플렉시블 CIGS 태양전지 제조를 위한 저온 나노입자공정)

  • Park, Chinho;Farva, Umme;Krishnan, Rangarajan;Park, Jun Young;Anderson, Timothy J.
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.61.1-61.1
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    • 2010
  • $CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

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Electrical Property Changes of $\textrm{NO}_X$ Sensitive $\textrm{WO}_3$ Thin Films as Applied DC Voltages on 8YSZ Substrate (8YSZ 기판에 증착한 $\textrm{WO}_3$ 박막의 DC 전압에 따른 $\textrm{NO}_X$ 감지특성)

  • 전춘배;박기철
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.1
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    • pp.8-12
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    • 1999
  • $\textrm{WO}_3$ semiconductive film, which is known to have a sensitivity on $\textrm{NO}_X$ gas was prepared on 8YSZ (8% Yttria stabilized $\textrm{ZrO}_2$) ionic conductor substrate that has oxygen ion pumping effect. Microstructure and electrical properity, especially $\textrm{NO}_X$ sensitivity as a function of DC voltage applied to 8YSZ substrate was examined. When the $\textrm{WO}_3$ film was annealed, it showed amorphous structure, while crystallization was occurred at $600^{\circ}$C revealing orthorhombic phase of $\textrm{WO}_3$. As the annealing temperature increases, (111) and (001) peaks of $\textrm{WO}_3$ film was enhanced. At $400^{\circ}C$ when DC voltage was applied, comparing with no DC bias, more stable and large response characteristics was showed, and the best sensitivity was observed at 2V. Recovery characteristics of NO gas was much better that that of $\textrm{NO}_2$ gas.

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Effect of Dispersed MoO3 Amount on Catalytic Activity of NiO-ZrO2 Modified with MoO3 for Acid Catalysis

  • Sohn, Jong-Rack;Lee, Sung-Gyu;Shin, Dong-Cheol
    • Bulletin of the Korean Chemical Society
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    • v.27 no.10
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    • pp.1623-1632
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    • 2006
  • NiO supported on zirconia modified with $MoO_3$ for acid catalysis was prepared by drying powdered $Ni(OH)_2-Zr(OH)_4$ with ammonium heptamolybdate aqueous solution, followed by calcining in air at high temperature. The characterization of prepared catalysts was performed using FTIR, Raman, XRD, and DSC. $MoO_3$ equal to or less than 15 wt% was dispersed on the surface of catalyst as two-dimensional polymolybdate or monomolybdate, while for $MoO_3$ above 15 wt%, crystalline orthorhombic phase of $MoO_3$ was formed, showing that the critical dispersion capacity of $MoO_3$ on the surface of catalyst is 0.18 g/g NiO-$ZrO_2$ on the basis of XRD analysis. Acidity and catalytic activities for acid catalysis increased with the amount of dispersed $MoO_3$. The high acid strength and acidity was responsible for the Mo=O bond nature of the complex formed by the interaction between $MoO_3$ and $ZrO_2$. The catalytic activity for acid catalysis was correlated with the acidity of the catalysts measured by the ammonia chemisorption method.

Dielectric Relaxation Properties of KNN-BT Ceramics with (Ba,Ca)SiO3 Glass Frit ((Ba,Ca)SiO3 Glass Frit 첨가에 따른 NKN-BT 세라믹스의 유전 완화 특성)

  • Bae, Seon Gi;Shin, Hyeo-Kyung;Lee, Seung-Hwan;Im, In-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.6
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    • pp.367-371
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    • 2014
  • We investigated dielectric relaxation properties of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics by addition (0~0.3 wt%) of $(Ba,Ca)SiO_3$ glass frit. All composition of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ added $(Ba,Ca)SiO_3$ glass frit showed the same crystallographic properties, coexistence of orthorhombic and tetragonal phase. By increasing addition of $(Ba,Ca)SiO_3$ glass frit, the Curie temperatures of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were decreased, whereas maximum dielectric constants of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were dramatically increased. Especially the deviations of Curie temperature $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were increased by increasing amount of $(Ba,Ca)SiO_3$ glass frit, and it indicated that $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics added $(Ba,Ca)SiO_3$ glass frit have relaxor characteristics.