• Title/Summary/Keyword: orthorhombic phase

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The Specficity of Phase Transitions of Lead Monoxide (산화납의 특이상전이)

  • 김정욱;최성철;이응상
    • Journal of the Korean Ceramic Society
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    • v.30 no.8
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    • pp.623-628
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    • 1993
  • Lead monoxide has two phases at room temperature. One is a yellow orthorhombic phase, the other is a redtetragonal phase. Sometimes two phases are hybrided. The specificity of phase transitions of lead oxide is found during the milling of the batch including lead oxide. The pure orthorhombic phase of PbO can be transformed to the tetragonal phase perfectly by wet ball milling (milling liquid is distilled water) without thermal energy. However, when ethyl alcohol, isopropyl alcohol and aceton are used as milling liquid, respectively, the hybrid form of orthorhombic andtetragonal phases is obtained by wet ball milling. From the hybrid form heat-treated at $600^{\circ}C$ for 3hrs, this work results that mechanical phase transition of orthorhombic phase make a new form as distorted type orthorhombic phase of PbO.

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Electronic Structures of Giant Magnetocaloric $Gd_5Si_2Ge_2$ Alloy

  • Rhee, Joo-Yull
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.4
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    • pp.153-157
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    • 2002
  • The electronic structures of Gd$_{5}$Si$_2$Ge$_2$ compound, which has a giant magnetocaloric effect, in the monoclinic and orthorhombic phases were calculated using the tight-binding linear-muffin-tin-orbital method within the atomic-sphere approximation. The calculated total energies of the monoclinic and orthorhombic structures in the paramagnetic phase confirm that the orthorhombic structure is more stable than monoclinic structure. The density of states (DOS) at the Fermi level of the orthorhombic phase is higher than that of the monoclinic phase in the paramagnetic phase, fulfilling the Stoner criterion. The calculated charge density verified the breaking of Ge(Si)-Ge(Si) bonding in the basal plane upon the orthorhombic-monoclinic phase transition. The DOS curve fairly well reproduces the photoemission spectrum.m.

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The "Orthorhombic" Metastable Phase in the System of $NaAlSi_3O_8-CaAl_2Si_2O_8$ ($NaAlSi_3O_8-CaAl_2Si_2O_8$계의 "Immm-강조형" 부안정상)

  • 정수진;임응극;김기수;김영진
    • Journal of the Korean Ceramic Society
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    • v.19 no.1
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    • pp.13-18
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    • 1982
  • The crystallization of metastable "orthorhombic" phase from the glass in the system of Na $AlSi_3O_8-CaAl_2Si_2O_8$ is studied. These crystals are crystallized in the range of composition from $Ab_80An_20$ to An100. The symmetry of these crystals show orthorhombic as a possible space group P22121. Two probable twin models are proposed. proposed.

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Crystal structure, microstructure, and low-loss dielectric property of MgO-added (Ca,Sr)(Zr,Ti)O3 (MgO가 첨가된 (Ca,Sr)(Zr,Ti)O3의 결정구조, 미세구조 및 저손실 유전특성)

  • Do-Hyeok Lee;Kyoung-Seok Moon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.6
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    • pp.261-267
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    • 2023
  • Crystal structure, microstructure, and dielectric properties of the (Ca, Sr)(Zr, Ti)O3 (CSZT) system has been studied as a function of sintering temperature and MgO addition for microwave applications. A single-phase CSZT powder with the orthorhombic crystal structure was obtained by the solid-state reaction method. The powder compacts were sintered at 1200℃, 1300℃, and 1400℃ respectively. All the sintered samples had a single-phase orthorhombic crystal structure and grain size increased with sintering temperature. In the case of 1 mol% MgO addition, the orthorhombic crystal structure was the main phase; however, a secondary phase appeared during sintering at 1400℃, as determined by EDS analysis. At 1400℃, the undoped and MgO-doped CSZT had almost similar grain size distribution and densification but the grain size distribution became slightly narrow. The MgO-doped CSZT showed excellent low-loss dielectric properties: εr = 34.14, tanδ = 0.00047, τε = -3.58 ppm/℃ at 1 MHz.

Three Kinds of Reflections with Phase Angle 0 or $\pi$ In Triclinic, Monoclinic and Orthorhombic Systems (Triclinic, Monoclinic 및 Orthorhombic Systems에서 Phase Angle 0 또는 $\pi$를 갖는 3종류의 Reflections)

  • Kim, Young-Sang;Jaejung Ko;Kang, Sang-Ook;Lee, Young-Joo;Eugene Kang;Shu, Il-Hwang
    • Korean Journal of Crystallography
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    • v.14 no.1
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    • pp.13-15
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    • 2003
  • For all primitive centric space groups in the triclinic, monoclinic and orthorhombic systems, either phase 0 or π can be allocated to three different kinds of reflections in order to specify the origin at one of the eight centers of symmetry. and the same holds for all primitive acentric space groups belonging to the point group 222. If these phased reflections are used as a basic set, more and more phased reflections with better accuracy could emerge in the process of direct methods.

Effect of Crystal Structures on the Sensing Properties of Nanophase $SnO_2$ Gas Sensor (나노상 $SnO_2$ 가스센서에서 센서검지특성에 미치는 결정구조의 영향)

  • 안재평;김선호;박종구;허무영
    • Journal of Powder Materials
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    • v.8 no.2
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    • pp.98-103
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    • 2001
  • Metallic tin powder with diameter less than 50 nm was synthesized by inert gas condensation method and subsequently oxidized to tin oxide ($SnO_2$) along the two heat-treatment routes. The $SnO_2$ powder of single phase with a tetragonal structure was obtained by the heat-treatment route with intermediate annealing step-wise oxidation, whereas the $SnO_2$ powder with mixture of orthorhombic and tetragonal phases was obtained by the heat-treatment route without intermediate annealing (direct oxidation). $SnO_2$ gas sensors fabricated from the nano-phase $SnO_2$ powders were investigated by structural observations as well as measurement of electrical resistance. The $SnO_2$ gas sensors fabricated from the mixed-phase powder exhibited much lower sensitivity against $H_2$ gas than those fabricated from the powder of tetragonal phase. Reduced sensitivity of gas sensors with the new orthorhombic phase was attributed to detrimental effects of phase boundaries between orthorhombic and tetragonal phases and many twin boundaries on the charge mobility.

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Dependence of Ferroelectric Properties on the Crystalline Phases of HoMnO3 Thin Film (HoMnO3 박막의 강유전 특성의 결정상 의존성)

  • Kim, Eung-Soo;Kang, Dong-Ho
    • Korean Journal of Materials Research
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    • v.16 no.6
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    • pp.394-399
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    • 2006
  • Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

Electric Field-Induced Phase Transition Behavior in Tetragonal Pb(Zn1/3Nb2/3)O3-PbTiO3 Single Crystals

  • Jeong, Dae-Yong;Kim, Jin-Sang;Kim, Hyun-Jai;Yoon, Seok-Jin
    • Journal of the Korean Ceramic Society
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    • v.43 no.7 s.290
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    • pp.389-392
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    • 2006
  • Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

Effect of additives on the microstructure of $PbNb_2{O_6}$ ceramics ($PbNb_2{O_6}$ 세라믹스에서 미세구조에 미치는 첨가제의 영향)

  • 김영상;안형식;오영우
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.417-424
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    • 1994
  • PbNb$_{2}$O$_{6}$ piezoelectric ceramics have good properties, but the applications of them have been limited due to the problems of microstructures. In the present study, effects of additives on the phase stability, microstructure, and electrical proper-ties of ferroetectric phase were investigated. La$_{2}$O$_{3}$, Nd$_{2}$O$_{3}$ and Sm$_{2}$O$_{3}$ were added with the amounts of 1, 3, 5 mol% respectively. The results showed that single orthorhombic(ferroelectric phase) phase compared with the mixed phase of pure PbNb2O6 was obtained. In the case of 5 mol% Nd$_{2}$O$_{3}$ addition, relative density of >95% and dense microstructure with -2.mu.m grain size were obtained.d.

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Phase Stability of Laser-ablated $SmBa_2Cu_3O_{7-y}$ thin Films Investigated by Raman Scattering Spectroscopy

  • Kim, G.;Jeong, A.R.;Jo, W.;Park, D.Y.;Cheong, H.;Tsukada, A.;Hammond, R.H.;Beasley, M.R.
    • Progress in Superconductivity
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    • v.11 no.2
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    • pp.141-146
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    • 2010
  • Phase stability diagram and boundary of a- and c-axis orientation of $SmBa_2Cu_3O_{7-y}$ (SmBCO) thin films grown by pulsed laser deposition (PLD) were reported with studies based on x-ray diffraction [1]. Four different samples are systematically analyzed: normal c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$, a-axis oriented $SmBa_2Cu_3O_{7-y}$, c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ with $Sm_2BaCuO_5$ phase, and a mixture with c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ and anomalously long-c tetragonal $SmBa_2Cu_3O_x$. Raman scattering spectroscopy equipped with polarization analysis elucidates the crystal orientation and the origin of the growth of the materials. It indicates that the technique can be used for quality control of conductor manufacturing processes as well as for enhancement of the materials properties.