• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.69-72
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• 2003

Bi-2223 superconducting wires were fabricated by stacking, drawing process with different precursor powders and different heat-treatment histories. The precursor powders were 2 kinds of Pb content. And a part of the tapes were experienced pre-annealing process which caused tetragonal structure of Bi-2212 phase to orthorhombic structure of it was during drawing process. We confirmed the transformation of Bi-2212 phase from tetragonal structure to orthorhombic structure and reduction of second phases. XRD and DC magnetization analysis were performed in order to investigate the fraction of Bi-2223 phase in Bi-2223/Ag HTS tape. We could achieve best Ic of 70 A class at the Bi-2223/Ag tape using low Pb content of precursor powder and experienced pre-annealing process. DC magnetization analysis was useful to investigate the fraction of Bi-2223 phase in the Bi-2223/Ag tape.

• 한국재료학회지
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• 제16권6호
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• pp.394-399
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• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

• 한국재료학회지
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• 제6권3호
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• pp.305-308
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• 1996

YxFe2-xO3(x=0.82)의 결정상 변환을 상온에서의 x선회절과 온도구간 80-541K에서의 Mossbauer 분광 방법에 의해서 연구하였다. Xtjs 회절선은 시료가 orthorhombic 결정상과 garnet 결정상이 공존하고 있으며, 공존비는 실험오차 범위내에서 garnet 구조가 orthorhombic 구조보다 우세함을 보인다. 공존상중에서 garnet 구조의 자기상 변환온도는 536$\pm$5 K로 결정하였다. Debye 모형을 이용한 Mossbauer 스펙트럼의 recoil-free fration 분석결과는 garnet 결정상내의 d자리나 a자리에 vacancy의 존재 가능성을 시사한다. 부가적으로 시료가 포함하는 각 결정상의 Debye 특성온도를 결정하였다.

• 한국세라믹학회지
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• 제43권7호
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• pp.389-392
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• 2006

Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.792-795
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• 2001

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.

• 대한전자공학회논문지
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• 제27권5호
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• pp.724-728
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• 1990

The X-ray diffraction pattern, electrical resistance, density and critical temperature of a series of YBa2(Cu3-xNix)O7-\ulcornersamples (0\ulcorner\ulcorner.5) were investigated with the increase of the Ni content. The samples show a principal 1.2.3-like phase with well resolved orthorhombic peaks. The final pattern of the x=0.1 sample appears to be well reacted orthorhombic YBa2(Cu,Ni)3O7-\ulcornerwith minor impurities and an appreciable amorphous fraction. From the above results, we conclude that Ni does not play an important role for the superconductivity in the Y-Ba-Cu-O system.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.277-278
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• 2008

Orthorhombic $LiMnO_2$(o-$LiMnO_2$) has attracted public attentions as a cathode materials of Lithium ion battery because it has low cost and high theoretical discharge capacity of 285mAh $g^{-1}$. In our study, o-$LiMnO_2$ is synthesized by quenching method. To verify their phase structure, X-ray diffraction is accomplished. Test cells are assembled to check electrochemical characteristics using acquired o-$LiMnO_2$ cathode and carbon anode. Charge/Discharge cycling was carried out for 50cycles. And impedance was measured at 1, 2, 5, 10, 30, 50cycle. During cycle test, the max discharge capacity was recorded 139mAh $g^{-1}$ at 10cycle.

• 전기학회논문지P
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• 제53권1호
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• pp.28-31
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• 2004

The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• 한국세라믹학회지
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• 제27권4호
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• pp.560-566
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• 1990

The early hydration characteristics according to the C3A polymorphism and the presence of gypsum, in order to establish the hydration mechanism of the system C3S-C3A, have been studied. The hydration rate of C3A was changed according to the its crystal structure and influenced the hydration of C3S. That is, the hydration rate of C3S was accelerated in case of orthorhombic-C3A, but that was slightly retarded in case of melt-C3A than that of cubic-C3A. In the system C3S-C3A-gypsum, the retardation phenomenon of the reaction of monosulfate formation was observed in case of both orthorhombic and melt-C3A.