• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.350-354
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• 2009

In this work, polymer - inorganic composites have prepared using polymer such as polyethylene glycol (PEG)/poly (methyl methacrylate, PMMA) and inorganic nanofillers materials such as TiO2 nanotubes (TiNTs)/carbon nanotubes (CNTs). The extensive structural, morphological and ionic properties revealed that the high surface area and tubular feature of nanofillers improved the interaction and cross-linking to polymer matrix which is significantly enhanced the ionic conductivity and electrical properties of composite electrolytes. Comparably high conversion efficiency ~4.5% has been observed by using the newly prepared PEG-TiNTs composite solid electrolyte as compared with PMMA-CNTs electrolyte based DSSCs (~3%). The detailed comparative properties would be discussed in term of their structural, morphology, ionic and photovoltaic properties.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.1-5
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• 2022

We presented a micro hemi-sphere structure flexible film to improve the external quantum efficiency (EQE) in OLEDs. The micro hemi-sphere flexible film was fabricated with breath figure (BF) method and replica process. At 45 mg/mL of concentration, the size of the hemi-spheres was approximately 6.2 ㎛ were obtained which are the most circular shape. So, it was possible to yield the best performance with an improvement of 33 % in the EQE and the widest viewing angle ranging from 0° to 70°. As a result, the hemi-sphere film's size and distribution seem to play important roles in enhancing the EQE in OLEDs. Furthermore, the flexible hemi-sphere film based on polymeric materials could offer an effective, large-scale, mass-produced product and a simple process and approach to achieve high efficiency in flexible OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.545-545
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• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.6
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• pp.797-803
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• 2013

In this paper, we fabricated insulator thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the electrical characteristics of organic transistor, we treated the semiconductor thin film with $O_2$ plasma. As results, the surface energy of organic transistor was increased from $38mJ/m^2$ to $72mJ/m^2$ and the mobility of organic transistor was increased $0.057cm^2V^{-1}s^{-1}$, that is increased 29% average ratio. Therefore, we have known that oragnic transistor's mobility can improve with plasma treatment of semiconductor thin film's surface.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.595-596
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1407-1410
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• 2007

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.445-448
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• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1398-1400
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• 2005

A novel data driver for passive matrix organic lightemitting devices (PM-OLEDs) with high gray scale images was designed. The proposed circuit consisted of a main current bias circuit as well as sample & hold circuits in each channel of the data driver to compensate a current offset. These results indicate that a data driver designed by using the current offset compensation technique holds promise for poten tial applications in PM-OLED displays with high gray scale images.

• Journal of Information Display
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• v.12 no.4
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• pp.219-222
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• 2011

Iridium-(III)-bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^2$' ]picolinate-based blue phosphorescent organic light-emitting diodes with different electron transport materials were fabricated. Each electron transport material had different electron mobilities and triplet energies. The device with 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene had the highest external quantum efficiency (20.1%) and luminous current efficiency (33.1 cd/A) due to its high electron mobility and triplet energy. The operational stability of each device was also compared with that of the others. The device with 2,2',2"(1,3,5-benzenetriyl)tris-(1-phenyl-1H-benzimidazole) was found to have a longer lifetime than the other devices.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2277-2280
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• 2014

The contact properties between gold and poly(3-hexylthiophene) (P3HT) films having either of two distinct molecular orientations and orderings were investigated. Thermal treatment increased the molecular ordering of P3HT and remarkably reduced the contact resistance at the electrode/semiconductor interface, which enhanced the electrical performance. This phenomenon was understood in terms of a small degree of metal penetration into the P3HT film as a result of the thermal treatment, which formed a sharp interface at the contact interface between the gold electrode and the organic semiconductor.