• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2003.10a
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• pp.323-326
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• 2003

The rural simulation model is necessary to do a effective rural planing. And it is considered to objected-oriented concept because rural are composed of facilities which have organic relations each other. For constituting object, classify rural facilities. In existing study, rural resource is consists of 2 fields including 14 categories, specially rural facility is configured with 20 categories which is represented three geometric element factor. Rural is a group which constructed to multi-layer facilities. So constitute object structure with 4 steps and 5 layers using MPC model.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.988-990
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• 2003

A plastic substrate for flexible display is developed. The developed PES film has good resistance to heat, low intrinsic birefringence, and mechanical stability. The gas barrier property in the substrate is improved through depositing organic and inorganic multi layer on plastic film by PVD and CVD process.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1377-1378
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• 1998

Blue light emitting electroluminescence(EL) diodes were fabricated utilizing Coronene and some organic materials. Coronene showed photoluminescence(PL) peak at 450nm in solution with high quantum efficiency. Multi layer system was applied to fabricate EL diode utilizing Coronene. The device showed didode-like applied voltage-current relationship. And blue light emitting was observed. The decay time of device was in a scale of some seconds. The trun-on voltage of device was about 9 V.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.525-529
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• 2018

The antireflective (AR) coated poly methyl methacrylate (PMMA) substrate was deposited by atomic layer deposition (ALD) on a self-assembled monolayer (SAM) to improve hydrophobicity and mechano-chemical properties of organic thin films. The water contact angles (WCA) were tested to characterize the surface wettability of SAM octadecyltrichlorosilane (OTS) films. Results showed that a contact angle of $105.9^{\circ}$ was obtained for the SAM films with an annealing process, and the highest WCA of $120^{\circ}$ was achieved for the films prepared by the SAM and ALD multi-process. The surface morphology of the SAM films with different assembly times and varying number of ALD cycles was obtained by atomic force microscopy (AFM). The maximum light transmittance for the SAM films on the PMMA substrate reached 99.9% at a wavelength of 450 nm. It was found that the SAM surfaces were not affected at all by the ALD process.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.53-58
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• 2018

Since the scaling-down of IC devices has been reached to their physical limitations, several innovative packaging technologies such as 3D packaging, embedded packaging, and fan-out wafer level packaging (FOWLP) are actively studied. In this study the fabrication of organic-inorganic dielectric material was evaluated for the use of multi-structured redistribution layers (RDL) in FOWLP. Compared to current organic dielectrics such as PI or PBO an organic-inorganic hybrid dielectric called polysilsesquioxane (PSSQ) can improve mechanical, thermal, and electrical stabilities. polysilsesquioxane has also an excellent advantage of simultaneous curing and patterning through UV exposure. The polysilsesquioxane samples were fabricated by spin-coating on 6-inch Si wafer followed by pre-baking and UV exposure. With the 10 minutes of UV exposure polysilsesquioxane was fully cured and showed $2{\mu}m$ line-pattern formation. And the dielectric constant of cured polysilsesquioxane dielectrics was ranged from 2.0 to 2.4. It has been demonstrated that polysilsesquioxane dielectric can be patterned and cured by UV exposure alone without a high temperature curing process.

• Korean Journal of Soil Science and Fertilizer
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• v.48 no.2
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• pp.105-118
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• 2015

This study was carried out to investigate the effects of profile disturbance with different artificial accumulation history on physico-chemical properties of soil under plastic film house. The investigations included soil profile description using soil column cylinder auger F10cm x h110cm, in situ and laboratory measurements of soil properties at five sites each at the cucumber (Site Ic ~ Vc) and grape (Site Ig ~ Vg) plastic film houses with artificial soil accumulation. The sites except sites Ic, IVc, IVg and Vg, belong to ex-paddy area. The types of accumulates around root zone included sandy loam soil for 3 sites, loam soil for 1 site, saprolite for 2 sites, and multi-layer with different accumulates for 3 sites. Especially, Site IIg has mixed plow zone (Ap horizon) with original soil and saprolite, whereas disturbed soil layers of the other sites are composed of only external accumulates. The soil depth disturbed by artificial accumulation ranged from 20 cm, for Site IIg, to whole measured depth of 110 cm, for Site IVc, Vc, and Site IVg. Elapsed time from artificially accumulation to investigation time ranged from 3 months, Site IIc, to more than 20 years, Site Vg, paddy-soil covering over well-drained upland soil during land leveling in 1980s. Disturbed top layer in all sites except Site Vg had no structure, indicating low structural stability. In situ infiltration rate had no correlation with texture or organic matter content, but highest value with highest variability in Site IIIc, the shortest elapsed time since sandy loam soil accumulation. Relatively low infiltration rate was observed in sites accumulated by saprolite with coarse texture, presumably because its low structural stability in the way of weathering process could result in relatively high compaction in agro-machine work or irrigation. In all cucumber sites, there were water-transport limited zone with very low permeable or impermeability within 50 cm under soil surface, but Site IIg, IIIg, and Vg, with relatively weak disturbance or structured soil, were the reverse. We observed the big change in texture and re-increase of organic matter content, available phosphate, and exchangeable cations between disturbed layer and original soil layer. This study, therefore, suggest that the accumulation of coarse material such as saprolite for cultivating cash crop under plastic film house might not improve soil drainage and structural stability, inversely showing weaker disturbance of original soil profile with higher drainage.

• Journal of Korean Society for Atmospheric Environment
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• v.8 no.4
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• pp.247-256
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• 1992

Airborne suspended particulates were collected at Shinchon by a high volume cascade impactor from Sep. 1990 to Aug. 1991. Organic matter was extracted from particulates and fractionated by liquid-liquid extraction and thin layer chromatography. Substances in the PAHs and nitroarenes'subfraction of neutral fraction were determined by capillary gas chromatography. Based on unit risk estimates by multi-stage model of benzo[a]pyrene and the results of exposure estimates, cancer risk was assessed. The annual average concentration of total suspended particulates was 201.77g/$m^3$. The percentage of fine particulates was 57.40. The concentration of total suspended particulates showed seasonal variations and was high in winter and spring. The average concentration of extractable organic matter was 8.12g/$m^3$. In all, 21 PAHs were identified and quantified. The annual concentration of fluoranthene was 2.38ng/$m^3$, and that was the highest value of all PAHs. A carcinogenic compound, benzo[a]pyrene, was at a concentration of 1.84ng/$m^3$. All the 10 nitroarenes were also identified and quantified. The major nitroarene in the Shinchon area was 2,7-dinitrofluorene. The annual concentration of 1-nitropyrene was 1.56ng/$m^3$. Concentrations of PAHs and nitroarenes were high in winter and low in summer. The life time excess risk estimates of benzo[a]pyrene was calculated as 0.96 persons/a million population in this experiment. In the rank of relative potenties, carcinogenic effects of the other PAHs were calculated as 0.004-0.108 persons/a million population.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.696-700
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• 2010

We fabricated red and blue organic light emitting display (OLEDs) which had the two kinds of multi-structure of ITO/HIL/HTL/EML/ETL/LiF/Al and ITO/HIL/HTL/EML/ETL/LiF/Al/LiF. In the case of red OLED that had LiF/Al/LiF structure compared to LiF/Al structure, the current density increased from 4.3 mA/$cm^2$ to 7.3 mA/$cm^2$, and the brightness increased from 488 cd/$m^2$ to 1,023 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 11.28 cd/A to 13.95 cd/A. Also in the case of blue OLED that had LiF on Al cathode layer, the current density increased from 1.2 mA/$cm^2$ to 1.8 mA/$cm^2$, and the brightness increased from 45 cd/$m^2$ to 85 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 3.69 cd/A to 4.82 cd/A. Through these experimental results it could be suggested that the LiF layer formed on Al prevents the oxidation of Al surface, and the electrode resistance become low with increase of supplied electrons, therefore the brightness and the efficiency are improved from the influence to the well-balanced bonding of electron and hole at emitting layer.