• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1436-1439
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• 2005

A novel current-type data driver for active matrix organic light emitting diode (AMOLED) is proposed for current uniformity enhancement among its output channels. New architecture is composed of shadow DACs that precharge output stages, a single-real DAC that correct the output level to a real target current level and output stages that operate in 3 states of sampling, correcting and driving. Simulation results show that the proposed driving method and circuits improve the current uniformity among output channels of a current-type driver IC.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1123-1126
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• 2005

For creation of low temperature polycrystallinesilicon (LTPS) the line beam excimer laser annealing (ELA) is a well known and established technique in mass production. With introduction of Sequential Lateral Solidification (SLS) some aspects such as crystalline quality, throughput and flexibility regarding the substrate size could be improved, but for OLED manufacturing still further process development is necessary. This paper discusses line beam ELA and SLS techniques that might enable process engineers to make polycrystalline-silicon (poly-Si) films with a high degree of uniformity and quality as required for system on glass (SOG) and active matrix organic light emitting displays (AMOLED). Equipment requirements are discussed and compared to previous standards. SEM images of process examples are shown in order to demonstrate the viability.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1297-1300
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.903-906
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• 2003

Doping a small amount of a phosphorescent dye into an organic light-emitting diodes(OLED) can lead to a significant improvement in the device properties. The fluorescent host materials like TAZ, CBP have been used, but have a problem of rapid decay of efficiency at high current densities. To alleviate this problem, phosphorescent host was introduced. The whole configuration of OELD fabricated was ITO/a-NPD(50nm)/Zn $cluster:Ir(ppy)_{3}(30nm)/BCP{(10nm)/Alq_{3}(20nm)$ /Al:Li. The OLED showed high luminance (> 50,000 $cd/m^{2}$ ) and external efficiency(5.7%). At higher current densities, rapid decay of external quantum efficiency or host emission, which was frequently observed in the fluorescent host system, were not observed.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.948-951
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• 2003

The electroluminescence (EL) properties were studied in organic light-emitting diodes with a red fluorescent dye, 4- (dicyanomethylene)- 2- tert-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl)- 4H- pyran (DCJTB) doped into tris-(8-hydroxyquinoline)aluminum ($Alq_{3}$), rubrene and the mixed matrix of $Alq_3$ and rubrene. The device with DCJTB doped into the $Alq_{3}$:rubrene mixed host shows an efficient red emission from DCJTB with a negligible EL emission from $Alq_{3}$ and a lower EL onset voltage compared to the device with DCJTB doped into the $Alq_{3}$ only host. The quantum efficiency is almost temperature-independent for the device with the $Alq_3:rubrene$ mixed host. The results indicate that recombination of injected electrons and holes occurs on rubrene and subsequent energy transfer to DCJTB dominates in the device with the $Alq_{3}$:rubrene mixed host.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1014-1017
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• 2006

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for $ITO/Alq_3/LiF/Al$ device structure. The admittance spectroscopic analysis of the devices with LiF layer shows reduction in contact resistance $(R_C)$, parallel resistance $(R_P)$ and increment in parallel capacitance $(C_P)$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.589-593
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• 2005

It is well known that proper encapsulation is crucial for the lifetime of organic light emitting diode (OLED) displays. With the development of increasingly better barrier coatings and perimeter seals, it has now become very desirable to be able to precisely measure the rate of water vapor and oxygen permeation through barrier coatings and perimeter sealing. This paper demonstrates a new permeation measurement method that uses tritium-containing water (HTO) as a tracer material. The theoretical detection limit of this direct method is $2.4{\times}10^{-8}g/(m^2day)$.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.997-998
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• 2006

This paper proposes an design of the OLED(Organic Light Emitting Diodes) driver IC using novel verification method. This method using the HDL(hardware description language) simulator, PLI(Programing Language Interface) and image viewer. The proposed method can be used efficiently to function verification in display driver IC.