• Title/Summary/Keyword: organic light emitting diode

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A DC-DC Converter Design for OLED Display Module (OLED Display Module용 DC-DC 변환기 설계)

  • Lee, Tae-Yeong;Park, Jeong-Hun;Kim, Jeong-Hoon;Kim, Tae-Hoon;Vu, Cao Tuan;Kim, Jeong-Ho;Ban, Hyeong-Jin;Yang, Gweon;Kim, Hyoung-Gon;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.3
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    • pp.517-526
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    • 2008
  • A one-chip DC-DC converter circuit for OLED(Organic Light-Emitting Diode) display module of automotive clusters is newly proposed. OLED panel driving voltage circuit, which is a charge-pump type, has improved characteristics in miniaturization, low cost and EMI(Electro-Magnetic Interference) compared with DC-DC converter of PWM(Pulse Width Modulator) type. By using bulk-potential biasing circuit, charge loss due to parasitic PNP BJT formed in charge pumping, is prevented. In addition, the current dissipation in start-up circuit of band-gap reference voltage generator is reduced by 42% and the layout area of ring oscillator is reduced by using a logic voltage VLP in ring oscillator circuit using VDD supply voltage. The driving current of VDD, OLED driving voltage, is over 40mA, which is required in OLED panels. The test chip is being manufactured using $0.25{\mu}m$ high-voltage process and the layout area is $477{\mu}m{\times}653{\mu}m$.

Encapsulation Method of OLED with Organic-Inorganic Protective Thin Films Sealed with Metal Sheet (금속판으로 봉인된 유-무기 보호 박막을 갖는 OLED 봉지 방법)

  • Lim, Su yong;Seo, Jung-Hyun;Ju, Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.7
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    • pp.539-544
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    • 2013
  • To study the encapsulation method for heat dissipation of high brightness organic light emitting diode (OLED), red emitting OLED of ITO (150 nm) / 2-TNATA (50 nm) / NPB (30 nm) / $Alq_3$ : 1 vol.% Rubrene (30 nm) / $Alq_3$ (30 nm) / LiF (0.7 nm) / Al (200 nm) structure was fabricated, which on $Alq_3$ (150 nm) / LiF (150 nm) as buffer layer and Al as protective layer was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and metal sheet. The current density, luminance and power efficiency was improved according to thickness of Al protective layer. The emission spectrum and the Commission International de L'Eclairage (CIE) coordinate did not have any effects on encapsulation process using attaching film and metal sheet The lifetime of encapsulated OLED using attaching film and metal sheet was 307 hours in 1,200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 7% compared with 287 hours, lifetime of encapsulated OLED using attaching film and flat glass. As a result, it showed the improved current density, luminance, power efficiency and the long lifetime, because the encapsulation method using attaching film and metal sheet could radiate the heat on OLED effectively.

Water vapor permeation properties of $Al_2O_3/TiO_2$ passivation layer on a poly (ether sulfon) substrate

  • Gwon, Tae-Seok;Mun, Yeon-Geon;Kim, Ung-Seon;Mun, Dae-Yong;Kim, Gyeong-Taek;Han, Dong-Seok;Sin, Sae-Yeong;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.160-160
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    • 2010
  • Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

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What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • Baek, Chung-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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The Preparation of $TiO_2$ Coated Activated Carbon Pellets Driven by LED and Removal Characteristics of VOCs (LED구동 $TiO_2$ 코팅 활성탄소 펠렛 제조 및 VOCs 제거 특성)

  • Kim, Yesol;Kim, Do Young;Jung, Min-Jung;Kim, Min Il;Lee, Young-Seak
    • Applied Chemistry for Engineering
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    • v.24 no.3
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    • pp.314-319
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    • 2013
  • In this study, nitrogen doped $TiO_2$ ($N-TiO_2$) coated on an activated carbon pellet (ACP) was prepared using sol-gel and the solid state heat treatment of urea to improve the removal property of volatile organic compounds (VOCs). To explore the visible light photocatalytic activity of the ACP under the light emitting diods (LED), the removal property of benzene gas was characterized by gas chromatography. The SEM and BET results show that the increment of titanium tetra isopropoxide contents leads to the increased $TiO_2$ coating amount of ACP surface and decreased specific surface area. From the results of benzene gas removal, the breakthrough time of ACP10 increased about 2 times compared to that of the ACP. The improved performance was attributed to the $N-TiO_2$ coating on ACP surface, which could be more effective to remove benzene gas under the condition of LED lamp.

Effect of LED Lighting Time on Productivity, Blood Parameters and Immune Responses of Dairy Cows (LED 점등시간이 젖소의 생산성, 혈액 매개변수 및 면역 반응에 미치는 영향)

  • Park, Jin-Ryong;Yoon, Nam-Jin;Belal, Shah-Ahmed;Shim, Kwan-Seob
    • Korean Journal of Organic Agriculture
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    • v.26 no.3
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    • pp.515-532
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    • 2018
  • Light is an essential and powerful element to animals. A light-emitting diode (LED) is most efficient in terms of economic benefits. The aim of the present study was to evaluate the effects of LED lighting time on milk production, milk composition, and the immune response of Holstein cows. Forty lactating cows were assigned to four experimental groups: control; natural daylight, treatment; am3-6, pm6-12 and pm6-am6. We found that there was no significant effect on the decrease ratio in milk production among the groups. Milk urea nitrogen (MUN) was significantly decreased in pm6-am6 and pm6-12 than the control. With regard to the hemolytic biochemical analysis, GLU was significantly increased and CRE, T-BIL were significantly decreased in the pm6-12 than the control. IGF-1 levels were significantly increased in pm6-12 compared to other groups. Besides, cortisol was significantly lowered in the pm6-12 than the control, while prolactin, IgA and IgG were not significant among the groups. In addition, catalase and glutathione peroxidase were also significantly increased in pm6-12 than the control. However, antioxidant enzyme activity and superoxide dismutase were not significant among the experimental groups. Therefore, it was concluded that LED lighting time had some impact on blood parameters and immune responses in dairy cows without any changes in milk production.

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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Luminescent Properties of Organic Light Emitting Diode Using $Alq_3$ Complex ($Alq_3$ 유도체를 사용한 유기전기발광소자의 발광 특성)

  • Yang, Ki-Sung;Kim, Doo-Seok;Kim, Byoung-Snag;Shin, Hoon-Kyu;Kim, Chung-Kyun;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1703-1705
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    • 2004
  • New luminescent material, 6.11-dihydoxy-5.12-naphtacene-dione $Alq_3$ complex($Alq_2$-Ncd), 1.4-dihydoxy-5.8-naphtaquinone $Alq_3$ complex ($Al_2Nq_4$) was synthesized. The $Alq_2-$ Ncd and $Al_2Nq_4$ has big molecular weight and many ${\pi}$-electrons more than widely known $Alq_3$. And extended efforts have been made to obtain high-performance electro luminescent(EL) devices. We used hole transfer layer of powdered TPD to improve hole transfer and characteristics of interface in OLED. This study indicates not only the sterical effect but also some other effects that would be responsible for the change of the emission wavelength. improvement of luminance and etc.

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Flowable Oxide를 이용한 저온 Flexible OLED 박막봉지 제작

  • Yong, Sang-Hyeon;Kim, Dae-Gyeong;Kim, Hun-Bae;Jo, Seong-Min;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.249-249
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    • 2012
  • 최근 주목받고 있는 Flexible Organic Light Emitting Diode (OLED) display에서는 Flexible 특성이 요구된다. 이는 현재 쓰이는 유리기판 대신 플라스틱기판으로 만들어야 가능하다. 하지만 플라스틱기판은 구성물질로 유기물을 사용하므로 수분과 산소의 투과에 매우 취약하다. 이는 장시간 사용 시 기판 위에 제작된 소자성능저하를 야기하는 등의 소자 신뢰도에 치명적 결함을 갖게 하는 원인이 된다. 따라서 기판 위의 소자를 보호할 수 있는 봉지기술 개발이 필요한데 가장 잘 알려진 플라스틱 기판에 적합한 Barrier기술로 유기물과 무기물을 교대로 적층하는 기술[1] 등이 있다. 본 연구에서는 PE-CVD 공정기술을 이용한 Flowable Oxide 박막과 ALD 공정기술을 이용한 Al2O3 무기물 박막을 적층하여 봉지박막을 구성하려 한다. Flowable Oxide는 저온공정이 가능하며 높은 증착속도와 뛰어난 Gap fill 특성을 가지고 있는데 이는 플라스틱기판의 엉성한 분자구조를 치밀하게 만들 것으로 예상되며 표면의 Pin-hole 또한 쉽게 채우는 특성이 있다. 실험은 Polyethylene Naphthalate (PEN) film 위에 PE-CVD 공정을 이용하여 Flowable Oxide를 증착하고, 그 후에 ALD 공정을 이용하여 Al2O3을 적층한 것을 하나의 샘플로 하였다. 샘플의 분석은 Ca test를 이용한 Water Vapor Transmission rate(WVTR)과 FT-IR, FE-SEM을 이용하여 분석하였다. FT-IR로 박막의 구성요소를 확인 하고 FE-SEM으로 박막의 Cross section image를 얻을 수 있었으며 또한 $4.85{\times}10^{-5}g/m^2$ day의 초기 WVTR 값을 얻을 수 있었다.

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Fabrication of Blue OLED with GDI Host and Dopant (GDI Host-Dopant를 이용한 청색 유기발광다이오드의 제작)

  • Jang, Ji-Geun;Shin, Se-Jin;Kang, Eui-Jung;Kim, Hee-Won;Seo, Dong-Gyoon;Lim, Yong-Gyu;Chang, Ho-Jung
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.773-776
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    • 2005
  • In the fabrication of high performance Blue organic light emitting diode, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (Indium Tin Oxide)/Glass substrate by vacuum evaporation. And then, Blue color emission layer was deposited using GDI602 as a host material and GDI691 as a dopant. Finally, small molecule OLED with the structure of ITO/2-TNATA/NPB/GDI602+GDI691/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode, respectively. Blue OLED fabricated in our experiments showed the color coordinate of CIE(0.14, 0.16) and the maximum luminescence efficiency of 1.06 lm/W at 11 V with the peak emission wavelength of 464 nm.

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