• 제목/요약/키워드: organic light emitting diode

검색결과 437건 처리시간 0.032초

ITO/$Alq_3$/Al 소자 구조에서 전기 전도 메카니즘 (Electrical Conduction Mechanism in ITO/$Alq_3$/Al device structure)

  • 정동회;김상걸;이동규;이준웅;허성우;장경욱;이원재;송민종;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.531-532
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    • 2005
  • We have used ITO/$Alq_3$/Al structure to study electrical conduction mechanism in $Alq_3$ based organic light emitting diode. Current-voltage characteristics were measured at room temperature by varying the thickness of $Alq_3$ layer from 60 to 400nm. We were able to prove that there are three different mechanism depending on the applied voltage; Ohmic, SCLC (space-charge-limited current). and TCLC (trap-charge -limited current) mechanism.

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ITO/$Alq_3$/Al 소자 구조의 합성 임피던스 분석 (Complex Impedance Analysis of $ITO/Alq_3/Al$ device structure)

  • 정동회;김상걸;이준웅;장경욱;이원재;송민종;정택균;김태완;이기우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.438-439
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    • 2006
  • We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

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Effect of Light Emitting Diode on Growth and Flowering of Oriental Melon (Cucumis melo L. var makuwa Makino)

  • Shin, Y.S.;Lim, Y.S.;Lee, M.J.;Han, Y.Y.;Park, S.D.;Chae, J.H.
    • 한국유기농업학회지
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    • 제19권spc호
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    • pp.203-205
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    • 2011
  • Investigation on oriental melon was carried out for 30 minutes starting at 7 PM every day from March 21 to May 24 to find out the effect of light emitting diode on seedling quality, grafting, growth and flowering of oriental melon. According to the result of the investigation, plant height was longer in Blue, Infrared, Red+Blue and Red treatment and leaf number was higher in Blue, Red+Blue and Infrared treatment than those of control. No big difference was identified between control and Yellow, Green, Ultraviolet treatments. Grafting rate was high in Green, Red+Blue and Green treatment. The number of flower every week in control was nine, the number was almost 1 higher in White and Ultraviolet A treatments, but it was 1 to 4 lower in the rest of treatments. The number of female flowers of control was 10, however, it was 21 in Infrared treatment, 17 in White, 15 in Ultraviolet, 13 in Red+lnfrared, 12 in Blue and Red+Blue, 11 in Yellow and 8 in Green.

나노스피어 리소그라피를 이용한 OLED 광추출 효율의 향상 (Improvement of Extraction Efficiency of OLED by Nanosphere Lithography)

  • 한광민;여종빈;이현용
    • 한국전기전자재료학회논문지
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    • 제24권12호
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    • pp.1002-1009
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    • 2011
  • The light extraction efficiency of top-emitting organic light-emitting diode (OLED) was improved by insertion of corrugation patterns between indium tin oxide and organic layers. The corrugation patterns was fabricated by nanosphere lithography, which could form a self-assembled particle monolayer over a large area. The electrical and optical properties for the OLED devices fabricated by vacuum evaporation, were investigated. We have demonstrated the enhancement of the power efficiency of corrugated OLED. As a result, the power efficiency of the corrugated OLED was found to be more than 42%.

Pixel Circuit with Threshold Voltage Compensation using a-IGZO TFT for AMOLED

  • Lee, Jae Pyo;Hwang, Jun Young;Bae, Byung Seong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권5호
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    • pp.594-600
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    • 2014
  • A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

투명 금속 음극을 이용한 전면발광 적색 인광 OLEDs의 전기 및 광학적 특성 (Electrical and Optical Properties of Red Phosphorescent Top Emission OLEDs with Transparent Metal Cathodes)

  • 김소연;하미영;문대규;이찬재;한정인
    • 한국전기전자재료학회논문지
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    • 제20권9호
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    • pp.802-807
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    • 2007
  • We have developed red phosphorescent top emission organic light-emitting diodes with transparent metal cathodes deposited by using thermal evaporation technique. Phosphorescent guest molecule, BtpIr(acac), was doped in host CBP for the red phosphorescent emission, Ca/Ag, Ba/Ag, and Mg/Ag double layers were used as cathode materials of top emission devices, which were composed of glass/Ni/2TNATA(15 nm)/${\alpha}$-NPD(35 nm)/CBP:BtpIr(acac)(40 nm, 10%)/BCP(5 nm)/$Alq_3$(5 nm)/cathodes. The optical transparencies of these metal cathodes strongly depend on underlying Ca, Ba, and Mg layers. These layers also strongly affect the electrical conduction and emission properties of the red phosphorescent top emission devices.

$O_2$ : Ar 혼합가스 플라즈마로 ITO표면 처리한 OLED의 동작특성 향상과 표면개질에 관한 연구 (Plasma treatments of indium tin oxide(ITO) anodes in argon/oxygen to improve the performance and morphological property of organic light-emitting diodes(OLED))

  • 서유석;문대규;조남인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.67-68
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    • 2008
  • A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.

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Development of IGZO TFTs and Their Applications to Next-Generation Flat-Panel Displays

  • Hsieh, Hsing-Hung;Lu, Hsiung-Hsing;Ting, Hung-Che;Chuang, Ching-Sang;Chen, Chia-Yu;Lin, Yusin
    • Journal of Information Display
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    • 제11권4호
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    • pp.160-164
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    • 2010
  • Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

White organic light emitting diode with single emission layer DPVBi partially doped with rubrene

  • Lee, Chan-Jae;Moon, Dae-Gyu;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1002-1005
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    • 2006
  • In this study, we fabricated white organic light emitting devices (WOLEDs) to use single emission layer, DPVBi with partially doped Rubrene. To realize white color, rubrene with 3.6% was partially doped with the gap from interface between DPVBi and hole transport layer NPD in a definite DPVBi layer. As the gap was increased, the intensity of orange peak grows less and less. The WOLED with gap of $5\;{\AA}$ has the best color stability and its color coordination is (0.345, 0.321) at 6V.

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PVK Host를 이용한 청색인광 OLED의 특성 (Characteristics of blue phosphorescent OLED with PVK host layer.)

  • 이선희;조민지;문대규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.153-153
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    • 2010
  • We have developed blue phosphorescent organic light emitting diode using spin-coated poly(9-vinylcarbazole) (PVK) host layer doped with blue phosphorescent material, Iridium(III) bis(4,6-difluorophenyl)-pyridinato-N,C2) picolinate (FIrpic). the concentration of FIrpic dopants was varied from 2% to 10%. The electrical and optical characteristics of the blue phosphorescent OLED with PVK:FIrpic layer were investigated.

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