• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.86-90
• /
• 1997

We were evaluated from organic insulator of low dielectric constants, This organic insulator material is not only conservate TFT chanel but also used to insulator material to data line and pixel ITO electrod. This organic insulator material is possessed high platness and we can coat by Spin-On-Glass type. And we can make high aperature device because minimized black matrix width from coupling cap to data line and pixel ITO electrod, This evaluation with acryl over coat and PFCB(perflorecyclobutine) and we got good results.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.194-197
• /
• 2002

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.184-187
• /
• 2002

In this work, the electrical characteristics of organic thin film transistors with the stacked organic gate insulators have been studied. PVP(Polyvinylphenol) and polystyrene were used as gate insulating materials. Both the high dielectric constant of PVP and better insulating capability of polystyrene were compensatorily adopted in two different stacking orders of PVP-polystyrene and polystyrene-PVP. The output characteristics of the device with the stacked gate insulator showed substantial improvement compared with those of the devices with either PVP or polystyrene gate insulator: Furthermore, these stacked organic gate insulators can differently affect the TFT characteristics with the stacking orders. The electrical properties of TFTs with organic gate insulators stacked in different orders are discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.1044-1045
• /
• 2004

In this work, the characteristics of organic thin film transistors (OTFTs) with self-assembled monolayers (SAMs) on polymeric gate insulator have been investigated. The SAMs were formed using atomic layer deposition (ALD) method onto gate insulator. Upon the investigations, it was observed that SAMs modify the wettability of polymeric insulator and influence the growth of subsequent organic semiconductor, and thereby, electric conductivity and roughness of the pentacene film are improved.

• Journal of Information Display
• /
• 제9권4호
• /
• pp.35-38
• /
• 2008

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with $15.3\AA$ interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 $cm^2$/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs.

• 한국건축시공학회:학술대회논문집
• /
• 한국건축시공학회 2015년도 춘계 학술논문 발표대회
• /
• pp.90-91
• /
• 2015

Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. In this study, cullet and fly ash were used as basic materials in order to secure a recycling technology of by-products which was mostly discarded and reclimed, and measure of physical properties of light-weight ceramic insulator.

• 한국건축시공학회:학술대회논문집
• /
• 한국건축시공학회 2014년도 추계 학술논문 발표대회
• /
• pp.180-181
• /
• 2014

Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. In this study, cullet and fly ash were used as basic materials in order to secure a recycling technology of by-products which was mostly discarded and reclimed, and measure of physical properties of light-weight ceramic insulator.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.579-582
• /
• 2009

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with 15.3${\AA}$ interplanar spacing. These results will be discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.717-720
• /
• 2002

In this work, the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulators have been studied. For the surface treatment, the simple rubbing technique was used. The field effect mobilities of the devices with PVP gate insulator was improved about four times as high as those of TFTs without the insulator surface treatment.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1107-1110
• /
• 2006

We investigate the effect of processing temperature of gate insulator and optical anisotropy on organic thin-film transistors (OTFTs). The insulator film which was processed lower temperature than solvent boiling temperature can lead more aligned pentacne molecules compare to higher processed insulator film. It finally gives rise to the big increase of carrier mobility in OTFTs, although there are little difference at the seriously affecting properties to device performance, for example roughness of gate insulator film.