• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.212-216
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• 2009

The spatial distribution of the optogalvanic (OG) signal in argon at the 801.489 nm ($1s_5-2p_8$ transition at the metastable level in Paschen notation) was investigated in the radial direction of a hollow cathode discharge tube. The results of this experiment showed that the OG signal amplitude decreases in accordance with the following two conditions; first, the level of discharge current and second, the distance from the cathode dark space. These results can be quantified by analyzing the electron density profile along the discharge regions, which can directly influence the collisional ionization induced by electron impact.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.