• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.432.2-432.2
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• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• 한국재료학회지
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• 제27권3호
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• pp.149-154
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• 2017

Transparent conducting oxides (TCOs) were fabricated using solution-based ITO (Sn-doped $In_2O_3$) nanoinks with nanorods at an annealing temperature of $200^{\circ}C$. In order to optimize their transparent conducting performance, ITO nanoinks were composed of ITO nanoparticles alone and the weight ratios of the nanorods to nanoparticles in the ITO nanoinks were adjusted to 0.1, 0.2, and 0.5. As a result, compared to the other TCOs, the ITO TCOs formed by the ITO nanoinks with weight ratio of 0.1 were found to exhibit outstanding transparent conducting performance in terms of sheet resistance (${\sim}102.3{\Omega}/square$) and optical transmittance (~80.2 %) at 550 nm; these excellent properties are due to the enhanced Hall mobility induced by the interconnection of the composite nanorods with the (440) planes of the short lattice distance in the TCOs, in which the presence of the nanorods can serve as a conducting pathway for electrons. Therefore, this resulting material can be proposed as a potential candidate for solution-based TCOs for use in optoelectronic devices requiring large-scale and low-cost processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.580-580
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• 2012

Heterostructures has unique and important properties, which may be helpful for finding many potential applications in the field of electronic, thermoelectric, and optoelectronic devices. We synthesized CdTe/Te core-shell heterostructures by vapor-solid process at low temperatures using a quartz tube furnace. Two step vapor-solid processes were employed. First, various tellurium structures such as nanowires, nanorods, nanoneedles, microtubes and microrods were synthesized under various deposition conditions. These tellurium nanostructures were then used as substrates in the second step to synthesize the CdTe/Te core-shell heterostructures. Using this method, various sizes, shapes and types of CdTe/Te core-shell structures were fabricated under a range of conditions. These structures were analysed by scanning electron microscopy, high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. The vapor phase process at low temperatures appears to be an efficient method for producing a variety of Cd/Te hetero-nanostructures. In addition, the hetero-nanostructures can be tailored to the needs of specific applications by deliberately controlling the synthetic parameters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.431-431
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• 2011

Graphene, two dimensional sheet of sp2-hybridized carbon, has attracted an enormous amount of interest due to excellent electrical, chemical and mechanical properties for the application of transparent conducting films, clean energy devices, field-effect transistors, optoelectronic devices and chemical sensors. Especially, graphene is promising candidate to detect the gas molecules and biomolecules due to the large specific surface area and signal-to-noise ratios. Despite of importance to the disease diagnosis, there are a few reports to demonstrate the graphene- and rGO-FET for biological sensors and the sensing mechanism are not fully understood. Here we describe scalable and facile fabrication of rGO-FET with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}1$-antichymotrypsin (PSA-ACT) complex, in which the ultrathin rGO sensing channel was simply formed by a uniform self-assembly of two-dimensional rGO nanosheets on aminated pattern generated by inkjet printing. Sensing characteristics of rGO-FET immunosensor showed the highly precise, reliable, and linear shift in the Dirac point with the analyte concentration of PSA-ACT complex and extremely low detection limit as low as 1 fg/ml. We further analyzed the charge doping mechanism, which is the change in the charge carrier in the rGO channel varying by the concentration of biomolecules. Amenability of solution-based scalable fabrication and extremely high performance may enable rGO-FET device as a versatile multiplexed diagnostic biosensor for disease biomarkers.

• 한국결정성장학회지
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• 제28권3호
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• pp.106-111
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• 2018

할라이드 페로브스카이트 나노결정은 고색순도 및 우수한 발광특성을 바탕으로 LED 응용에 대한 연구가 활발히 진행되고 있다. 고온주입법을 통하여 $CsPbX_3$(X = I, Br, and Cl) 나노결정을 합성하였고 할로젠 이온의 조성 변화를 통하여 발광파장을 제어하였다. 고분자 바인더를 사용하여 녹색과 적색의 필름을 제작하였다. 합성된 나노결정 및 제작된 필름의 우수한 광특성을 확인하였고, 이를 InGaN 청색 LED칩에 적용하여 우수한 색영역의 wLED를 구현하였다.

• Journal of electromagnetic engineering and science
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• 제11권1호
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• pp.42-50
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• 2011

One of the important applications of THz time-domain spectroscopy (TDS) is the detection of explosive materials through identification of vibrational fingerprint spectra. Most recent THz spectroscopic measurements have been made using pellet samples, where disorder effects contribute to line broadening, which results in the merging of individual resonances into relatively broad absorption features. To address this issue, we used the technique of parallel plate waveguide (PPWG) THz-TDS to achieve sensitive characterization of three explosive materials: TNT, RDX, and HMX. The measurement method for PPWG THz-TDS used well-established ultrafast optoelectronic techniques to generate and detect sub-picosecond THz pulses. All materials were characterized as powder layers in 112 ${\mu}m$ gaps in metal PPWG. To illustrate the PPWG THz-TDS method, we described our measurement by comparing the vibrational spectra of the materials, TNT, RDX, and HMX, applied as thin powder layers to a PPWG, or in conventional sample cell form, where all materials were placed in Teflon sample cells. The thin layer mass was estimated to be about 700 ${\mu}g$, whereas the mass in the sample cell was ~100 mg. In a laboratory environment, the absorption coefficient of an explosive material is essentially based on the mass of the material, which is given as: ${\alpha}({\omega})=[ln(I_R({\omega})/I_S({\omega}))]m$. In this paper, we show spectra of 3 different explosives from 0.2 to 2.4 THz measured using the PPWG THz-TDS.

• 대한금속재료학회지
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• 제48권4호
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• pp.320-325
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• 2010

NiO thin films were deposited by radio frequency magnetron sputtering on glass substrates. The processing variables of the oxygen content, sputtering power, and pressure were varied to investigate the electrical properties and surface morphology of NiO films. It was found that the resistivity of NiO films at $1.22{\times}10^2{\Omega}cm$ (2.5% $O_2$ in Ar gas) was greatly reduced to$ 2.01{\times}10^{-1}$ ${\Omega}cm$ (100% oxygen) under a typical sputtering condition of 6 mTorr and 200 watts. In an effort to observe the resistivity variances, the sputtering power was varied from 80 to 200 watts at 6 mTorr with 100% $O_2$. However, the resistivity of the NiO films changed in the range of $10^{-1}-10^{-2}$ ${\Omega}cm$. The dependence on the sputtering power was therefore found to be weak in this experiment. When the sputtering pressure was changed from 3 to 60 mTorr at 200 watts with 100% $O_2$, the resistivity of the NiO films showed the lowest value of $5.8{\times}10^{-3}$ ${\Omega}cm$ at 3 mTorr, which is close to that of commercial ITO films (${\sim}10^{-4}$ ${\Omega}cm$). As the sputtering pressure increased, the resistivity also increased to 4.67 cm at 60 mTorr. The surface morphology of the NiO films was also checked by Atomic Force Microscopy. It was found that the RMS surface roughness values ranged from 0.6 to 1.5 nm and thtthe dependence on the sputtering parameters was weak.

• Composites Research
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• 제35권4호
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• pp.298-302
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• 2022

할라이드 페로브스카이트 물질은 우수한 광전특성으로 인해 차세대 디스플레이에 응용시킬 물질로서 주목받고 있다. 본 연구에서는 다공성 SiO₂ 나노입자의 기공 내부에서 제한시킨 결정 성장을 통하여 할라이드 페로브스카이트의 안정성 문제를 해결한, CsPbBr₃의 새로운 소결법을 제안한다. 최적의 소결 조건에서 소결된 CsPbBr₃-SiO₂ 나노입자는 515 nm의 발광 피크를 나타낸다. CsPbBr₃-SiO₂ 나노입자는 소결 과정 중 닫힌 기공에 말미암아 몇 종의 극성 용매 속에서도 안정적으로 발광 특성을 유지할 수 있었으며, 이는 디스플레이용 색변환 필름으로서의 응용 가능성을 보여준다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• 한국광학회지
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• 제13권2호
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• pp.128-133
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• 2002

최근 주목을 받고 있는 고분자 발광다이오드의 개발에 있어서, 발광고분자의 Photoluminescence(PL)와 Electroluminescence (EL) 양자효율 측정은 소자의 성능개선 연구 등에 있어서 가장 핵심적인 요소 중 하나로 여겨진다. 이러한 이유에서 본 연구에서는 잘 알려진 발광고분자인 Poly(2-methoxy-5(-(2-ethyl-hexyloxy)- 1,4-phenylenevinylene) (MEH- PPV)를 이용하여 시편을 제작하고, 적분구 측정법을 이용하여 이의 P교라 EL 양자효율을 구하였다. 그 결과 본 연구진이 개발한 MEH-PPV의 PL 양자효율은 8$\pm$2%로 측정되었는데, 이는 세계적으로 알려져 있는 ～9%의 결과에 거의 접근함을 보였다. 한편, 이 물질을 이용하여 고분자 발광다이오드를 제작한 결과, 이의 EL양자효율은 0.02 1m/W로 측정되었다. 본 연구를 통하여 확립된 발광고분자의 양자효율 측정법은 국내의 유기발광소자 연구에 큰 기여를 하리라 기대된다.